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MITSUBISHI SEMICONDUCTOR
M54525AGP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION M54525AGP is seven-circuit Darlington transistor array with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION
16 O1 15 O2 14 O3 13 O4 12 O5 11 O6 10 O7 9
IN1 1 IN2 2 IN3 3 INPUT IN4 4 IN5 5 IN6 6
OUTPUT
FEATURES q High breakdown voltage (BVCEO 50V) q High-current driving (IC(max) = 500mA ) q With clamping diodes q Driving available with PMOS IC output of 24V q Wide operating temperature range (Ta = -40 to +85C)
IN7 7 GND
8
COM COMMON
Package type 16P2S-A
CIRCUIT DIAGRAM
COM
APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces
OUTPUT INPUT 10.5k Vz=7V 5k 3k GND The seven circuits share COM and GND. The diode, indicated with the dotted line, parasitic, and cannot be used. Unit:
FUNCTION The M54525AGP has seven circuits consisting of NPN Darlington transistors. This IC has resistance of 10.5k and Zener diode between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 500mA maximum. Collector-emitter supply voltage is 50V maximum. The M54525AGP is enclosed in molded small flat package, enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = -40 ~ +85C)
Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Collector current Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25C, when mounted on board Conditions Output, H Current per circuit output, L Ratings -0.5 ~ +50 500 -0.5 ~ +30 500 50 0.80 -40 ~ +85 -55 ~ +125 Unit V mA V mA V W C C
Feb.2003
MITSUBISHI SEMICONDUCTOR
M54525AGP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = -40 ~ +85C)
Symbol VO Parameter Output voltage Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) "H" input voltage "L" input voltage Limits min 0 0 0 17 0 typ -- -- -- -- -- max 50 400 mA 200 25 6 V V Unit V
IC
Duty Cycle no more than 4% Duty Cycle no more than 15%
VIH VIL
ELECTRICAL CHARACTERISTICS
Symbol V (BR) CEO VCE(sat) II VF IR hFE Parameter
(Unless otherwise noted, Ta = 25C)
Test conditions
Limits min 50 -- -- -- -- -- -- 1000 typ -- 1.2 1.0 0.9 0.8 1.3 -- 2000 max -- 1.6 1.3 1.1 1.3 2.0 100 --
Unit V V mA V A --
Collector-emitter breakdown voltage
ICEO = 100A II = 500A, IC = 350mA Collector-emitter saturation voltage II = 350A, IC = 200mA II = 250A, IC = 100mA Input current VI = 17V Clamping diode forward voltage IF = 350mA Clamping diode reverse current VR = 50V DC amplification factor VCE = 2V, IC = 350mA
SWITCHING CHARACTERISTICS
Symbol ton toff Parameter Turn-on time Turn-off time
(Unless otherwise noted, Ta = 25C)
Test conditions CL = 15pF (note 1)
Limits min -- -- typ 5 100 max -- --
Unit ns ns
NOTE 1 TEST CIRCUIT
INPUT Vo
TIMING DIAGRAM
INPUT 50% 50%
Measured device OPEN PG
RL OUTPUT
50% 50%
50
CL
OUTPUT
ton
toff
(1)Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, Zo = 50, VIH = 17V (2)Input-output conditions : RL = 25, Vo = 10V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes
Feb.2003
MITSUBISHI SEMICONDUCTOR
M54525AGP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Output Saturation Voltage Collector Current Characteristics 500
II = 500A
Thermal Derating Factor Characteristics 1.0
Power dissipation Pd (W)
0.6
0.416
Collector current Ic (mA)
0.8
400
300
0.4
200
Ta = 25C Ta = 85C Ta = -40C
0.2
100
0
0
25
50
75 85 100
0
0
0.5
1.0
1.5
2.0
Ambient temperature Ta (C) Duty Cycle-Collector Characteristics 500 500
Output saturation voltage VCE(sat) (V) Duty Cycle-Collector Characteristics
Collector current Ic (mA)
1
Collector current Ic (mA)
400
400
300 200
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C
300
1
2 3 4 5 6 7
200
2 3 4 5 6 7
100
100
0
0
20
40
60
80
100
0 0
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C
20
40
60
80
100
Duty cycle (%) DC amplification Factor Collector Current Characteristics 104
DC amplification factor hHE
7 5 3 2 Ta = 85C VCE = 2V
Duty cycle (%) Grounded Emitter Transfer Characteristics 500
VCE = 2V
Collector current Ic (mA)
400
300
103
7 5 3 2 Ta = 25C Ta = -40C
200
Ta = 85C Ta = 25C Ta = -40C
100
102 1 10
2
3
5 7 102
2
3
5 7 103
0
0
2
4
6
8
10 12
14 16
Collector current Ic (mA)
Input voltage VI (V)
Feb.2003
MITSUBISHI SEMICONDUCTOR
M54525AGP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
Input Characteristics 3
Forward bias current IF (mA)
Clamping Diode Characteristics 500
400
Input current II (mA)
2
Ta = -40C Ta = 25C
300
200
Ta = 25C Ta = 85C Ta = -40C
1
Ta = 85C
100
0
0
5
10
15
20
25
30
0
0
0.5
1.0
1.5
2.0
Input voltage VI (V)
Forward bias voltage VF (V)
Feb.2003

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