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| HMC-APH462 v02.0208 GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 15 - 27 GHz Typical Applications This HMC-APH462 is ideal for: * Point-to-Point Radios Features Output IP3: +37 dBm P1dB: +29 dBm Gain: 17 dB Supply Voltage: +5V 50 Ohm Matched Input/Output Die Size: 3.70 x 2.62 x 0.1 mm 3 LINEAR & POWER AMPLIFIERS - CHIP * Point-to-Multi-Point Radios * VSAT * Military & Space Functional Diagram General Description The HMC-APH462 is a high dynamic range, two stage GaAs HEMT MMIC 0.8 Watt Power Amplifier which operates between 15 and 27 GHz. The HMC-APH462 provides 17 dB of gain, and an output power of +29 dBm at 1 dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-APH462 GaAs HEMT MMIC 1 Watt Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations[1] TA = +25 C, Vdd1 = Vdd2 = Vdd3 = Vdd4 = 5V, Idd1 + Idd2 + Idd3 + Idd4 = 1440 mA [2] Parameter Frequency Range Gain Input Return Loss Output Return Loss Output power for 1dB Compression (P1dB) Output Third Order Intercept (IP3) Supply Current (Idd1+Idd2 + Idd3 + Idd4) 12 Min. Typ. 15 - 17 16 15 15 26 34 1440 27 13 Max. Min. Typ. 17 - 27 17 18 18 29 37 1440 mA Max. Units GHz dB dB dB dBm [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2=Vgg3=Vgg4 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 + Idd4 = 480 mA, Idd2 + Idd3 = 960 mA 3 - 176 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH462 v02.0208 GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 15 - 27 GHz Fixtured Gain vs. Frequency 20 Fixtured Pout vs. Frequency 40 POUT (dBm), IP3 (dB) 18 GAIN (dB) 36 16 32 3 IP3@18dBm/Tone P3dB P1dB 14 28 12 24 10 15 17 19 21 23 25 27 FREQUENCY (GHz) 20 15 16 17 18 19 20 21 22 23 24 25 26 27 FREQUENCY (GHz) Input Return Loss vs. Frequency 0 -5 RETURN LOSS (dB) Output Return Loss vs. Frequency 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 -40 -45 -10 -15 -20 -25 -30 -35 -40 -45 15 17 19 21 23 25 27 FREQUENCY (GHz) 15 16 17 18 19 20 21 22 23 24 25 26 27 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 177 LINEAR & POWER AMPLIFIERS - CHIP HMC-APH462 v02.0208 GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 15 - 27 GHz Absolute Maximum Ratings Drain Bias Voltage Gate Bias Voltage +5.5 Vdc -1 to +0.3 Vdc 530 mA 1060 mA 18 dBm 20.5 C/W -65 to +150 C 180 C 3 LINEAR & POWER AMPLIFIERS - CHIP Drain Bias Current (Idd1 + Idd4) Drain Bias Current (Idd2 + Idd3) RF Input Power Thermal Resistance (Channel to die bottom) Storage Temperature Channel Temperature ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard WP - 22 Alternate [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004" SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE .002" [1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3 - 178 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH462 v02.0208 GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 15 - 27 GHz Pad Descriptions Pad Number Function Description This pad is AC coupled and matched to 50 Ohms. Interface Schematic 1 RFIN 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 179 6 RFOUT This pad is AC coupled and matched to 50 Ohms. 3, 5, 7, 9 Vdd1, Vdd2, Vdd3, Vdd4 Power Supply Voltage for the amplifier. See assembly for required external components. 2, 4, 8, 10 Vgg1, Vgg2, Vgg3, Vgg4 Gate control for amplifier. Please follow "MMIC Amplifier Biasing Procedure" application note. See assembly for required external components. Die Bottom GND Die bottom must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH462 v02.0208 GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 15 - 27 GHz Assembly Diagram 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 180 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH462 v02.0208 GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 15 - 27 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004") Thick GaAs MMIC Ribbon Bond 0.076mm (0.003") 3 RF Ground Plane 0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. Follow ESD precautions to protect against ESD 0.150mm (0.005") Thick Moly Tab 0.254mm (0.010" Thick Alumina Thin Film Substrate Figure 2. 0.102mm (0.004") Thick GaAs MMIC Ribbon Bond 0.076mm (0.003") RF Ground Plane Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding RF bonds made with 0.003" x 0.0005" ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001" (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 181 LINEAR & POWER AMPLIFIERS - CHIP |
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