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| Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t - value, Diode Isolations-Prufspannung insulation test voltage tP = 1 ms TC = 80 C TC = 25 C tP = 1 ms, TC = 80C VCES IC,nom. IC ICRM 1700 800 1300 1600 V A A A TC=25C, Transistor Ptot 6,6 kW VGES +/- 20V V IF 800 A IFRM 1600 A VR = 0V, tp = 10ms, TVj = 125C I2t 170 kA2s RMS, f = 50 Hz, t = 1 min. VISOL 4 kV Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 800A, VGE = 15V, Tvj = 25C IC = 800A, VGE = 15V, Tvj = 125C IC = 60mA, VCE = VGE, Tvj = 25C VGE(th) VCE sat min. 4,5 typ. 2,6 3,1 5,5 max. 3,1 3,6 6,5 V V V VGE = -15V ... +15V QG - 9,6 - C f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V Cies - 52 - nF f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V VCE = 1700V, VGE = 0V, Tvj = 25C VCE = 1700V, VGE = 0V, Tvj = 125C VCE = 0V, VGE = 20V, Tvj = 25C Cres ICES - 2,7 0,02 10 - 1,5 80 400 nF mA mA nA IGES - prepared by: Alfons Wiesenthal approved by: Chr. Lubke; 11.08.2000 date of publication: 04.08.2000 revision: 2 (Series) 1(8) FZ800R17KF6CB2 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 800A, VCE = 900V VGE = 15V, RG = 1,8, Tvj = 25C VGE = 15V, RG = 1,8, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 800A, VCE = 900V VGE = 15V, RG = 1,8, Tvj = 25C VGE = 15V, RG = 1,8, Tvj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 800A, VCE = 900V VGE = 15V, RG = 1,8, Tvj = 25C VGE = 15V, RG = 1,8, Tvj = 125C Fallzeit (induktive Last) fall time (inductive load) IC = 800A, VCE = 900V VGE = 15V, RG = 1,8, Tvj = 25C VGE = 15V, RG = 1,8, Tvj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modulleitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip pro Zweig / per arm IC = 800A, VCE = 900V, VGE = 15V RG = 1,8, Tvj = 125C, LS = 50nH IC = 800A, VCE = 900V, VGE = 15V RG = 1,8, Tvj = 125C, LS = 50nH tP 10sec, VGE 15V TVj125C, VCC=1000V, VCEmax=VCES -LsCE *dI/dt ISC LsCE 3200 12 A nH Eoff 325 mWs Eon 300 mWs tf 0,11 0,12 s s td,off 1,1 1,1 s s tr 0,14 0,14 s s td,on 0,3 0,3 s s min. typ. max. RCC+EE - 0,08 - m Charakteristische Werte / Characteristic values Diode / Diode Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current IF = 800A, VGE = 0V, Tvj = 25C IF = 800A, VGE = 0V, Tvj = 125C IF = 800A, - diF/dt = 6600A/sec VR = 900V, VGE = -10V, Tvj = 25C VR = 900V, VGE = -10V, Tvj = 125C Sperrverzogerungsladung recovered charge IF = 800A, - diF/dt =6600A/sec VR = 900V, VGE = -10V, Tvj = 25C VR = 900V, VGE = -10V, Tvj = 125C Abschaltenergie pro Puls reverse recovery energy IF = 800A, - diF/dt = 6600A/sec VR = 900V, VGE = -10V, Tvj = 25C VR = 900V, VGE = -10V, Tvj = 125C Erec 80 160 mWs mWs Qr 170 300 As As IRM 800 920 A A VF min. - typ. 2,1 2,1 max. 2,5 2,5 V V 2(8) FZ800R17KF6CB2 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode/Diode, DC pro Modul / per module Paste = 1 W/m*K / grease = 1 W/m*K RthCK RthJC - typ. 0,008 max. 0,019 0,034 K/W K/W K/W Tvj - - 150 C Top -40 - 125 C Tstg -40 - 125 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight terminals M4 terminals M8 G 1050 M1 AlN 17 mm 10 mm 275 5 Nm M2 2 8 - 10 Nm Nm g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) FZ800R17KF6CB2 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 Ausgangskennlinie (typisch) Output characteristic (typical) I C = f (VCE) VGE = 15V 1800 1600 1400 1200 IC [A] 1000 800 Tvj = 25C 600 400 200 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 Tvj = 125C 4,0 4,5 5,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) 1800 1600 1400 1200 vGE = 20V vGE = 15V vGE = 12V vGE = 10V vGE = 9V vGE = 8V I C = f (VCE) Tvj = 125C IC [A] 1000 800 600 400 200 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4(8) FZ800R17KF6CB2 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 Ubertragungscharakteristik (typisch) Transfer characteristic (typical) I C = f (VGE) VCE = 20V 1800 1600 Tj = 25C 1400 1200 Tj = 125C IC [A] 1000 800 600 400 200 0 5 6 7 8 9 10 11 12 13 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 1800 1600 Tvj=25C I F = f (VF) 1400 1200 Tvj=125C IF [A] 1000 800 600 400 200 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5(8) FZ800R17KF6CB2 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 Schaltverluste (typisch) Eon = f (IC) , E off = f (IC) , E rec = f (IC) Rgon = Rgoff =1,8 , VCE = 900V, Tj = 125C, VGE = 15V Switching losses (typical) 1200 Eoff 1000 EON Erec 800 E [mJ] 600 400 200 0 0 200 400 600 800 1000 1200 1400 1600 1800 IC [A] Schaltverluste (typisch) Switching losses (typical) 1000 900 800 700 E [mJ] 600 500 400 300 200 100 0 0 2 Eoff EON Erec E on = f (RG) , E off = f (RG) , E rec = f (RG) IC = 800A , VCE = 900V , Tj = 125C, VGE = 15V 4 6 8 10 RG [] 6(8) FZ800R17KF6CB2 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 Transienter Warmewiderstand Transient thermal impedance ZthJC = f (t) 0,1 ZthJC [K / W] 0,01 Zth:Diode Zth:IGBT 0,001 0,001 0,01 0,1 1 10 100 t [sec] i ri [K/kW] : IGBT i [sec] : IGBT ri [K/kW] : Diode i [sec] : Diode 1 1,82 0,003 3,35 0,003 2 8,99 0,05 18,22 0,045 3 3,8 0,1 6,22 0,45 4 4,39 0,95 6,21 0,75 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) 1800 1600 1400 1200 Rg = 1,8 Ohm, Tvj= 125C IC [A] 1000 800 600 400 200 0 0 IC,Modul IC,Chip 200 400 600 800 1000 1200 1400 1600 1800 VCE [V] 7 (8) FZ800R17KF6CB2 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 Auere Abmessungen / external dimensions 8(8) FZ800R17KF6CB2 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via "www.eupec.com / sales & contact". Warning Due to technical requirements the products may contain dangerous substances. For information on the types in question please contact your local Sales Office via "www.eupec.com / sales & contact". |
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