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| DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage General Description These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex's wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Normally-on switches Solid state relays Converters Linear amplifiers Constant current sources Power supply circuits Telecom Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature Soldering temperature* Value BVDSX BVDGX 20V -55OC to +150OC 300OC Package Options D S GD Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. *Distance of 1.6mm from case for 10 seconds. G D S TO-92 (front view) TO-243AA (top view) Ordering Information BVDSX/ BVDGX 450V RDS(ON) (max) (min) IDSS Package Options TO-92 DN3545N3 TO-243AA (SOT-89) DN3545N8 DN3545N8-G 20 200mA DN3545N3-G -G indicates package is RoHS compliant (`Green') DN3545 Thermal Characteristics Package T0-92 TO-243AA Notes: 1. ID (continuous) is limited by max rated Tj. 2. Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. ID (continuous)1 136mA 200mA ID (pulsed) 550mA 550mA Power Dissipation @TA = 25OC 0.74W 1.6W2 O jc C/W O ja C/W IDR1 136mA 200mA IDRM 550mA 550mA 125 15 170 782 Electrical Characteristics (@25 C unless otherwise specified) O Symbol BVDSX VGS(OFF) VGS(OFF) IGSS ID(OFF) IDSS RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Parameter Drain-to-source breakdown voltage Gate-to-source OFF voltage Change in VGS(OFF) with temperature Gate body leakage current Drain-to-source leakage current Saturated drain-to-source current Static drain-to-source on-state resistance Change in RDS(ON) with temperature Forward transductance Input capacitance Common source output capacitance Reverse transfer capacitance Turn-ON delay time Rise time Turn-OFF delay time Fall time Diode forward voltage drop Reverse recovery time Min 450 -1.5 200 150 - Typ 800 Max -3.5 4.5 100 1.0 1.0 20 1.1 360 40 15 20 30 30 40 1.8 - Units V V Conditions VGS = -5V, ID = 100A VDS = 25V, ID= 10A VGS = 20V, VDS = 0V VGS = -5V, VDS = Max Rating VGS = -5V, VDS = 0.8 Max Rating TA = 125C VGS = 0V, VDS = 15V VGS = 0V, ID = 150mA VGS = 0V, ID = 150mA ID = 100mA, VDS = 10V VGS = -5V, VDS = 25V, f = 1MHz mV/OC VDS = 25V, ID= 10A nA A mA mA %/OC m pF ns VDD = 25V, ID = 150mA, RGEN = 25,VGS = 0V to -10V V ns VGS = -5V, ISD = 150mA VGS = -5V, ISD = 150mA VDD Switching Waveforms and Test Circuit 0V 90% INPUT -10V RL PULSE GENERATOR Rgen OUTPUT 10% t(ON) t(OFF) tr td(OFF) tF td(ON) VDD D.U.T. 10% 10% INPUT OUTPUT 0V 90% 90% 2 DN3545 Typical Performance Curves Output Characteristics 0.7 VGS = +2.0V 1.0V 0V -0.5V 0.6 Saturation Characteristics VGS = +2V +1.0V 0V -0.5V 0.6 0.5 ID (Amperes) 0.5 ID (Amperes) 0.4 -0.8V 0.4 -0.8V -1.0V 0.2 0.3 0.3 -1.0V 0.2 0.1 -1.5V 0 0 50 100 150 200 250 300 350 400 450 0.1 -1.5V 0 0 2 4 6 8 10 VDS (Volts) Transconductance vs. Drain Current 0.8 VDS = 10V TA = -55oC TO-243AA 1.5 VDS (Volts) Power Dissipation vs. Ambient Temperature 2.0 GFS (siemens) 0.6 PD (watts) TA = 25oC 0.4 1.0 TO-92 TA = 125oC 0.2 0.5 0 0 0.1 0.2 0.3 0.4 0 0 25 50 75 100 125 150 ID (Amperes) Maximum Rated Safe Operating Area 1.0 1.0 TA (oC) Thermal Response Characteristics Thermal Resistance (normalized) TO-243AA (Pulsed) TO-92 (Pulsed) TO-243AA (DC) TO-243AA 0.8 TA = 25 oC PD = 1.6W ID (Amperes) 0.1 TO-92 (DC) 0.6 0.4 0.01 0.2 TO-92 TC = 25 oC PD = 1.0W 0.01 0.1 1 10 0.001 1 T A =25 oC 10 100 1000 0 0.001 VDS (Volts) 3 tp (seconds) DN3545 Typical Performance Curves (cont.) BVDSS Variation with Temperature 1.2 ID = 100A VGS = -5V 40 50 On Resistance vs. Drain Current BVDSS (Normalized) RDS(ON) (ohms) 1.1 30 1.0 20 0.9 10 VGS = 0V 0.8 -50 0 0 50 100 150 0 0.2 0.4 0.6 0.8 TJ (oC) Transfer Characteristics 1.0 ID (Amperes) VGS(OFF) and RDS(ON) w/ Temperature 1.5 2.4 VDS = 10V TA = -55oC VGS(OFF) (normalized) 0.6 TA = 25oC 1.1 VGS(OFF) @ 10A 1.6 0.4 TA = 125oC 0.9 1.2 0.2 0.7 RDS(ON) @ 0V, 150mA 0.8 0 -3 -2 -1 0 1 2 0.5 -50 0 50 100 0.4 150 VGS (Volts) Capacitance vs. Drain Source Voltage 300 TJ (oC) Gate Drive Dynamic Characteristics 3 VGS = -5V 2 250 ID = 150mA 1 C (picofarads) 200 VDS = 30V VGS (volts) 0 -1 -2 -3 150 CISS 100 50 CRSS 0 0 10 20 30 COSS 40 -4 -5 0 1 2 3 4 5 6 VDS (Volts) QG (Nanocoulombs) 4 RDS(ON) (normalized) 0.8 1.3 2.0 ID (Amperes) DN3545 3-Lead TO-92 Surface Mount Package (N3) 0.135 MIN 0.125 - 0.165 0.080 - 0.105 1 2 3 Top View 0.175 - 0.205 0.170 - 0.210 123 Seating Plane 0.500 MIN 0.014 - 0.022 0.014 - 0.022 0.045 - 0.055 0.095 - 0.105 Front View Side View Notes: All dimensions are in millimeters; all angles in degrees. 5 DN3545 3-Lead TO-243AA (SOT-89) Surface Mount Package (N8) 4.50 0.10 1.72 0.10 0.40 0.05 Exclusion Zone 1.50 0.10 4.10 0.15 2.45 0.15 2.21 0.08 No Vias/Traces in this area. Shape of pad may vary. 1.05 0.15 0.42 0.06 1.50 BSC 3.00 BSC 0.5 0.06 Top View Side View Bottom View Notes: All dimensions are in millimeters; all angles in degrees. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-DN3545 A012207 6 |
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