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| SUR20100CT Ultra Fast Recovery Epitaxial Diodes Dimensions TO-220AB A C(TAB) A C A C A Dim. A B C D E F G H J K M N Q R A=Anode, C=Cathode, TAB=Cathode SUR20100CT VRSM V 1000 VRRM V 1000 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Symbol IFRMS IFAVM IFRM Test Conditions TVJ=TVJM TC=100oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine Maximum Ratings 25 10 150 75 80 65 70 28 27 21 20 -40...+150 150 -40...+150 Unit A IFSM TVJ=150oC TVJ=45oC A I2t TVJ=150oC A2s TVJ TVJM Tstg Ptot Md Weight TC=25oC Mounting torque o C 78 0.4...0.6 2 W Nm g SUR20100CT Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=12A; TVJ=150oC TVJ=25oC For power-loss calculations only TVJ=TVJM Characteristic Values typ. max. 250 150 4 2.1 2.7 1.67 33.6 1.6 0.5 60 Unit uA uA mA V V m K/W IR VF VTO rT RthJC RthCK RthJA trr IRM IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC _ VR=540V; IF=10A; -diF/dt=100A/us; L<0.05uH; TVJ=100 C o 50 6.5 60 7.2 ns A FEATURES * International standard package JEDEC TO-220AB * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling SUR20100CT Ultra Fast Recovery Epitaxial Diodes F ig. 1 F orward current vers us voltage drop. F ig. 2 R ecovery charge vers us -diF /dt. F ig. 3 P eak revers e current vers us -diF /dt. F ig. 4 Dynamic parameters vers us junction temperature. F ig. 5 R ecovery time vers us -diF /dt. F ig. 6 P eak forward voltage vers us diF /dt. F ig. 7 T rans ient thermal impedance junction to cas e. |
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