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MITSUBISHI SEMICONDUCTOR
M63828WP/DP
Taiwan A'ssy product
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply. PIN CONFIGURATION
INPUT
IN1 1 IN2 2 IN3 3 IN4 4 IN5 5 IN6 6 IN7 7 GND 8 16 O1 15 O2 14 O3 13 O4 OUTPUT 12 O5 11 O6 10 O7 9 COM COMMON

FEATURES Two package configurations (WP/DP) High breakdown voltage (BVCEO 50V) High-current driving (Ic(max) = 500mA) With clamping diodes Driving available with TTL, PMOS IC output Wide operating temperature range (Ta = -40 to +85C)
16P4X-A(WP) Package type 16P2X-B(DP)
CIRCUIT DIAGRAM
COM OUTPUT
APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces
INPUT
10.5K
7.2K
3K
GND
The seven circuits share the COM and GND.
FUNCTION The M63828WP and M63828DP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 10.5k between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 500mA maximum. Collector-emitter supply voltage is 50V maximum.
The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit :
ABSOLUTE MAXIMUM RATINGS
Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Collector current Input voltage
(Unless otherwise noted, Ta = -40 ~ +85C)
Conditions Output, H Current per circuit output, L
Ratings -0.5 ~ +50 500 -0.5 ~ +30 500
Unit V mA V mA V W C C
Feb. 2003
Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25C, when mounted on board
50 1.47(WP)/1.00(DP) -40 ~ +85 -55 ~ +125
MITSUBISHI SEMICONDUCTOR
M63828WP/DP
Taiwan A'ssy product
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS
Symbol VO Output voltage Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) Parameter
(Unless otherwise noted, Ta = -40 ~ +85C)
Limits min 0 0 0 5 0 typ -- -- -- -- -- max 50 400
Unit V
IC
VIH VIL
Duty Cycle WP : no more than 8% DP : no more than 5% Duty Cycle WP : no more thn 30% DP : no more than 20% "H" input voltage IC 400mA "L" input voltage
mA 200 25 0.8 V V
ELECTRICAL CHARACTERISTICS
Symbol V (BR) CEO VCE (sat) II VF IR hFE Parameter
(Unless otherwise noted, Ta = 25C)
Test conditions ICEO = 100A
Limits min 50 -- -- -- -- -- -- 1000 typ -- 1.2 1.0 0.9 0.9 1.4 -- 3000 max -- 1.6 1.3 1.1 1.5 2.0 100 --
Unit V V mA V A --
Collector-emitter breakdown voltage
II = 500A, IC = 350mA Collector-emitter saturation voltage II = 350A, IC = 200mA Input current Clamping diode forward voltage Clamping diode reverse current DC amplification factor II = 250A, IC = 100mA VI = 10V IF = 350mA VR = 50V VCE = 2V, IC = 350mA
SWITCHING CHARACTERISTICS
Symbol ton toff Parameter Turn-on time Turn-off time
(Unless otherwise noted, Ta = 25C)
Test conditions CL = 15pF (note 1)
min -- --
Limits typ 30 450
max -- --
Unit ns ns
NOTE 1 TEST CIRCUIT
INPUT Measured device OPEN PG 50 CL OUTPUT VO
TIMING DIAGRAM
50% RL INPUT
50%
OUTPUT 50% 50%
ton (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VI = 8V (2) Input-output conditions : RL = 25, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes
toff
Feb. 2003
MITSUBISHI SEMICONDUCTOR
M63828WP/DP
Taiwan A'ssy product
TYPICAL CHARACTERISTICS
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Thermal Derating Factor Characteristics 2.0 500
Clamping Diode Characteristics
Forward bias current IF (A)
Power dissipation Pd (W)
1.5
M63828WP
400
300
Ta = 85C
1.0
M63828DP 0.764
200
0.5
0.520
100
Ta = 25C
Ta = -40C
0
0
25
50
75 85
100
0
0
0.4
0.8
1.2
1.6
Ambient temperature Ta (C) Duty-Cycle-Collector Characteristics (M63828WP) 500
Forward bias voltage VF (V) Duty-Cycle-Collector Characteristics (M63828WP) 500
q
Collector current Ic (mA)
Collector current Ic (mA)
400
400
w
300
q
300
200
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C
e r t y u
200
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 85C
100
100
w e r t y u
100
0
0
20
40
60
80
100
0
0
20
40
60
80
Duty cycle (%) Duty-Cycle-Collector Characteristics (M63828DP) 500 500
Duty cycle (%) Duty-Cycle-Collector Characteristics (M63828DP)
Collector current Ic (mA)
300
Collector current Ic (mA)
400
q
400
300
w
200
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C
q
200
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit.
100
e r t y u
100
w e r ty u
*Ta = 85C
0
0
20
40
60
80
100
0
0
20
40
60
80
100
Duty cycle (%)
Duty cycle (%)
Feb. 2003
MITSUBISHI SEMICONDUCTOR
M63828WP/DP
Taiwan A'ssy product
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Output Saturation Voltage Collector Current Characteristics 100
Il=500 m A
Output Saturation Voltage Collector Current Characteristics 500
Il=500 m A
Collector current Ic (A)
Collector current Ic (A)
80
Ta=-40C
400
Ta=85C
60
Ta=25C
300
Ta=25C
40
Ta=85C
200
Ta=-40C
20
100
0
0
0.2
0.4
0.6
0.8
1.0
0
0
0.4
0.8
1.2
1.6
Output saturation voltage VCE(sat) (V) DC Amplification Factor Collector Current Characteristics 104
7 VCE = 2V
Output saturation voltage VCE(sat) (V)
Grounded Emitter Transfer Characteristics 500
DC amplification factor hFE
5
Collector current Ic (mA)
Ta = 85C 3 2
400
Ta = 85C
300
Ta = 25C
103
7 5 3 2
Ta = -40C Ta = 25C
200
100
Ta = -40C
102 1 10
2
3
5 7 102
2
3
5 7 103
0
0
1
2
3
4
Collector current Ic (mA)
Input voltage VI (V)
Input Characteristics 4
Input current II (mA)
3
Ta = -40C Ta = 25C
2
1
Ta = 85C
0
0
5
10
15
20
25
Input voltage VI (V)
Feb. 2003
MITSUBISHI SEMICONDUCTOR
M63828WP/DP
Taiwan A'ssy product
PACKAGE OUTLINE
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
16P4X-A
PACKAGE TYPE : 16P4X-A 16PIN PLASTIC MOLD DUAL INLINE PACKAGE
Dimension in mm
e1
c
D
A
A1
A2
L
SEATING PLANE
e
b1
b
b2
Symbol
A A1 A2 b b1 b2 c D E e e1 e2 L
Dimension in Millimeters Min Max Nom 4.57 0.38 3.3 3.25 3.45 0.46 0.36 0.56 1.52 1.78 1.14 0.99 0.76 1.14 0.25 0.20 0.33 19.15 19.3 18.9 6.5 6.65 6.35 2.54 7.94 7.62 8.26 9.65 8.64 9.145 3.18
e2
E
Feb. 2003
MITSUBISHI SEMICONDUCTOR
M63828WP/DP
Taiwan A'ssy product
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
16P2X-B
PACKAGE TYPE : 16P2X-B 16PIN PLASTIC MOLD SMALL OUTLINE PACKAGE
Dimension in mm
HE
E
F A
A2 D
A1
b
e
c y
Detail F
e b2 Dimension in Millimeters Symbol
l2
Min 1.47 0.1 0.402 0.19 9.8 3.81 5.79 0.37 0
Nom 1.6 0.175 1.45 0.41 0.2 9.91 3.91 1.27 5.99 0.71
Max 1.73 0.25 0.42 0.25 10.01 3.99 6.2 1.27 0.1 8
A A1 A2 b
e1
c D E e HE L y b2 e1 l2
Recommended Mount Pad
0.76 5.72 1.27
L
Feb. 2003

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