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| AEGIS SEMICONDUTORES LTDA. A5N:600.XXH VOLTAGE RATINGS Part Number A5N:600.12H A5N:600.14H A5N:600.16H A5N:600.18H A5N:600.20H VRRM , VR (V) Max. rep. peak reverse voltage TJ = 0 to 125 C 1200 1400 1600 1800 2000 O VRSM , VR (V) Max. nonrep. peak reverse voltage O TJ = -40 to 0 C 1200 1400 1600 1800 2000 TJ = 25 to 125 C 1300 1500 1700 1900 2100 O MAXIMUM ALLOWABLE RATINGS PARAMETER TJ Junction Temperature Tstg Storage Temperature IT(AV) Max. Av. current @ Max. TC VALUE -40 to 125 -40 to 150 600 75 945 9.09 ITSM Max. Peak non-rep. surge current 9.9 kA 10.37 11.30 428 466 I2t Max. I2t capability 488 532 I2t1/2 Max. I2t1/2 capability di/dt Max. Non-repetitive rate-ofrise current PGM Max. Peak gate power PG(AV) Max. Av. gate power +IGM Max. Peak gate current -VGM Max. Peak negative gate voltage F Mounting Force 5820 kA2s1/2 A/ms W W mA V N.m tp < 5 ms kA2s t = 10ms t = 8.3 ms O Initial T J = 125 C, no voltage applied after surge. UNITS O O NOTES O 180 half sine wave C C C A O IT(RMS) Nom. RMS current A 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms t = 8.3 ms O Initial T J = 125 C, rated VRRM applied after surge. O Initial T J = 125 C, no voltage applied after surge. O Initial T J = 125 C, rated VRRM applied after surge. O Initial T J = 125 C, no voltage applied after surge. 800 16 3 150 2 900 I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). TJ = 125OC, VD = VDRM, ITM = 1600A. Gate pulse: 20V, 20 W, 10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. tp < 5 ms - AEGIS SEMICONDUTORES LTDA. A5N:600.XXH CHARACTERISTICS PARAMETER VTM peak on-state voltage VT(TO) Threshold voltage rT Slope resistance IL Latching current IH Holding current td Delay time tq Turn-off time dv/dt Critical rate-of-rise of off-state voltage IRM, IDM Peak reverse and offstate current IGT DC gate current to trigger VGT DC gate voltage to trigger VGD DC gate voltage not to trigger RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ----------------------6 3 ------------TYP. ----------0.7 ----20 ------------------85(3.1) TO-200AB MAX. UNITS 1.93 0.884 0.617 400 500 1 100 V V mW mA mA ms ms O TEST CONDITIONS Initial T J = 25 C, 50-60Hz half sine, Ipeak = 1885A. O TJ = 125 C Av. power = V T(TO) * IT(AV) +rT * [IT(RMS)]2, 180 Half Sine. Use low values for ITM < p rated IT(AV) TC = 125OC, 12V anode. Gate pulse: 10V, 20 W, 100ms. TC = 25O C, 12V anode. Initial IT = 15A. TC = 25O C, VD = VDRM, 50A resistive load. Gate pulse: 10V, 20W, 10ms, 1ms rise time. TJ = 125O C, ITM = 550A, di/dt = 40A/ms, VR = 50V. dv/dt = 20 V/ms lin. to rated V DRM. Gate: 0V, 100 W. TJ = 125OC, Exp. To 67% V DRM, gate open. O TJ = 125 C, Rated VRRM and VDRM, gate open. O 1000 V/ms 40 360 180 ----0.3 0.04 0.052 0.053 0.02 --mA mA V TC = -40OC TC = 25O C TC = -40OC +12V anode-to-cathode. For recommended gate drive see "Gate Characteristics" figure. TC = 25OC TC = 25O C, Max. Value which will not trigger with rated VDRM V anode. O C/W DC operation, double side cooled. O O C/W 180 sine wave, double side cooled. O O C/W 120 rectangular wave, double side cooled. O C/W Mtg. Surface smooth, flat and greased. Double side cooled. ----- g(oz.) JEDEC Maximum Allowable Case Temperature 125 125 Maximum Allowable Case Temperature Maximum Allowable Case Temperature (C) 120 115 110 105 100 95 30 Maximum Allowable Case Temperature (C) 120 115 110 105 100 95 90 85 80 75 70 0 100 200 300 400 500 600 *Sinusoidal waveform 30 60 90 120 180 90 85 80 75 70 *Rectangular waveform 60 90 120 180 DC 0 100 200 300 400 500 600 700 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics AEGIS SEMICONDUTORES LTDA. A5N:600.XXH Maximum Average Forward Power Loss 30 10000 Maximum Average Forward Power Loss 7500 30 Maximum Average Forward Power Loss (W) 9000 8000 7000 6000 5000 4000 90 60 Maximum Average Forward Power Loss (W) 7000 6500 6000 5500 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 100 200 300 400 500 600 700 800 900 1000 *Rectangular waveform 90 120 180 DC 60 3000 2000 1000 0 0 100 200 300 400 500 600 700 800 900 120 180 1000 *Sinusoidal waveform Average Forward Current (A) Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics 10000 Forward Voltage Drop 100 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC (C/W) Instantaneous Forward Current (A) 10-1 1000 10-2 125C 25C 100 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 Instantaneous Forward Voltage (V) 10-3 10-3 10-2 10-1 100 101 Time (s) Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics AEGIS SEMICONDUTORES LTDA. A5N:600.XXH 100 Rectangular gate pulse a) Recommended load line for rated di/dt: 20V, 30W; tr<=0.5ms, tp=>6ms. b)Recommended load line for <=30% rated di/dt: 15V, 40W; tr<=1ms, tp=>6ms. Gate Characteristics (1) PGM = 12W, tp = 5ms (2) PGM = 30W, tp = 2ms (3) PGM = 60W, tp = 1ms (4) PGM = 200W, tp = 300ms Instantaneous Gate Voltage (V) 10 (a) (b) TJ = -40C 1 TJ = 140C TJ = 25C (1) (2) (3) (4) VGD IGD 0.1 1E-3 0.01 0.1 1 10 100 1000 Instantaneous Gate Current (A) Fig. 7 - Gate Trigger Characteristics TO-200AB Fig. 8 - Outline Characteristics |
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