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AEGIS
SEMICONDUTORES LTDA.
A5A:1100.XX
VOLTAGE RATINGS
Part Number VRRM , VR (V) rep. peak reverse voltage TJ = 0 to 175 C A5A:1100.14 A5A:1100.16 A5A:1100.18 A5A:1100.20 A5A:1100.22 1400 1600 1800 2000 2200
O
Max. VRSM , VR (V) Max. non-rep. peak reverse voltage TJ = 25 to 175OC 1500 1700 1900 2100 2300
TJ = -40 to 0OC 1400 1520 1710 1900 2090
MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 175 -40 to 175 950 125 1800 14.3 IFSM Max. Peak non-rep. surge current 15.0 kA 17.0 17.8 937 1025 I2t Max. I2t capability 1325 1450 It
2 1/2
UNITS
O O
NOTES 180O half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms Initial TJ = 175OC, rated VRRM applied after surge.
C C C
A
O
IF(RMS) Nom. RMS current
A
Initial TJ = 175OC, no voltage applied after surge.
Initial TJ = 175OC, rated VRRM applied after surge.
kA2s
t = 8.3 ms t = 10ms t = 8.3 ms Initial TJ = 175OC, no voltage applied after surge.
O
Max. I t
2 1/2
capability
14500 1250
kA2s1/2 N(Lbf)
Initial TJ = 175 C, no voltage applied after surge. for time tx = I t
2 1/2
2
It
*
1/2 tx .
(0.1 < tx < 10ms). -
F Mounting Force
AEGIS
SEMICONDUTORES LTDA.
A5A:1100.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage VF(TO)1 Low-level threshold VF(TO)2 High-level threshold rF1 Low-level resistance rF2 High-level resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ----------------------TYP. 1.60 --------25 --------255(9) TO-200AC MAX. UNITS 1.79 0.788 0.806 0.318 0.290 50 0.05 0.054 0.055 0.015 --V V mW mA
O O O
TEST CONDITIONS Initial T J = 25 C, 50-60Hz half sine, Ipeak = 2984A. O TJ = 175 C Av. power = V F(TO) * IF(AV) +rF * [IF(RMS)]2 Use low values for IFM < pIF(AV) TJ = 175 O Max. rated VRRM C.
O
C/W DC operation, double side C/W 180 sine wave, double side
O
O
C/W 120 rectangular wave, duble side Mtg. Surface smooth, flat and greased. Single side. O C/W For double side, divide value by 2. -----
g(oz.)
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (C)
170 160 150 140 130
30
Maximum Allowable Case Temperature (C)
170 160 150 140 130 120 110
180
120 110 100 90 80
*Rectangular waveform
60 90 120 180
30 60 90 120
DC
100 0 100 200 300 400 500 600 700 800 900 1000 1100 1200
*Sinusoidal waveform
0
200
400
600
800
1000 1200 1400 1600 1800 2000
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:1100.XX
Maximum Average Forward Power Loss
20000
Maximum Average Forward Power Loss
Maximum Average Forward Power Loss (W)
Maximum Average Forward Power Loss (W)
18000 16000 14000 12000 10000 8000 6000 4000 2000 0 0 200 400 600 800
14000 12000 10000 8000 6000 4000 2000 0 0 200 400 600 800
30
30
60
60
90 120 180 DC
90 120 180
1000 1200 1400 1600 1800 2000
1000 1200 1400 1600 1800 2000
*Sinusoidal waveform
Average Forward Current (A)
*Rectangular waveform
Average Forward Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
10000
Forward Voltage Drop
0.1
Transient Thermal Impedance ZthJC
1000
Transient Thermal Impedance ZthJC (C/W)
1.5 2.0 2.5 3.0 3.5
Instantaneous Forward Current (A)
0.01
25C 125C
100 0.5 1.0
1E-3 1E-3
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics
Fig. 6 - Transient Thermal Impedance Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:1100.XX
TO-200AC
Fig. 7 - Outline Characteristics

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