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| BTB/BTA10 Discrete Triacs(Non-Isolated/Isolated) Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 T2 G T2 T1 G T1 ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM It dI/dt Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25C) It Value for fusing Critical rate of rise of on-state current _ I G = 2 x I GT , tr < 100 ns TO-220AB F = 60 Hz F = 50 Hz Tc = 105C t = 16.7 ms t = 20 ms Value 10 105 100 55 Tj = 125C 50 Unit A A As A/s tp = 10 ms F = 120 Hz VDSM/V RSM Non repetitive surge peak off-state voltage IGM PG(AV) Tstg Tj Peak gate current Average gate p ower diss ipation Storage junction temperature range Operating junction temperature range tp = 10 ms tp = 20 s Tj = 25C Tj = 125C Tj = 125C VDRM/VRRM + 100 V A W C 4 1 - 40 to + 150 - 40 to + 125 s ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) SNUBBERLESSTM and LOGIC LEVEL(3 Quadrants) Symbol Test Conditions Quadrant CW IGT (1) VGT VGD IH (2) IL dV/dt (2) VD = 12 V VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM gate open Tj = 125C Tj = 125C I - III II MIN. MIN. (dI/dt)c (2) Without snubber RL = 33 RL = 3.3 k Tj = 125C I - II - III I - II - III I - II - III MAX. MAX. MIN. MAX. MAX. 35 50 60 500 5.5 35 1.3 0.2 50 70 80 1000 9.0 V/s A/ms BTA/BTB BW 50 mA V V mA mA Unit BTB/BTA10 Discrete Triacs(Non-Isolated/Isolated) s STANDARD (4 Quadrants) Symbol IGT (1) VD = 12 V VGT VGD IH (2) IL VD = VDRM IT = 500 mA IG = 1.2 IGT I - III - IV II RL = 3.3 Tj = 125C Test Conditions RL = 33 Quadrant I - II - III IV ALL ALL MAX. MAX. MIN. MAX. MAX. MIN. MIN. Value 50 100 1.3 0.2 50 50 100 400 10 V/s V/s Unit mA V V mA mA dV/dt (2) VD = 67 % VDRM gate open Tj = 125C (dV/dt)c (2) (dI/dt)c =4.4 A/ms Tj = 125C STATIC CHARACTERISTICS Symbol VTM (2) Vto (2) Rd (2) IDRM IRRM Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 Test Conditions ITM = 14 A tp = 380 s Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C MAX. MAX. MAX. MAX. Value 1.55 0.85 40 5 1 Unit V V m A mA Threshold voltage Dynamic resistance VDRM = VRRM THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-a) Junction to case (AC) Junction to ambient Parameter Value 1.5 60 Unit C/W C/W PRODUCT SELECTOR Voltage (xxx) Part Number 200 V ~~ 1000 V BTBV/BTA10 X X 50 mA Standard TO-220AB Sensitivity Type Package OTHER INFORMATION Part Number BTB/BTA10 Marking BTB/BTA10 Weight 2.3 g Base quantity 250 Packing mode Bulk BTB/BTA10 Discrete Triacs(Non-Isolated/Isolated) F ig. 1 Maximum power dis s ipation vers us R MS : on-s ta te current (full cycle). P (W) 13 12 11 10 9 8 7 6 5 4 3 2 1 0 F ig. 2 R MS on-state current vers us cas e : temperature (full cycle). IT (R MS ) (A ) 12 11 10 9 8 7 6 5 4 3 2 1 0 B TB B TA IT (R MS ) (A ) 0 1 2 3 4 5 6 7 8 9 10 T c (C ) 0 25 50 75 100 125 F ig. 3 R elative variation of thermal impeda nce : versus pulse duration. K =[Zth/R th] Zth(j-c ) F ig. 4 : values ). IT M (A ) 100 On-s tate cha racteris tics (maximum 1E +0 T j max. V to = 0.85 V R d = 40 W m T j max 1E -1 Zth(j-a) 10 T j=25C tp (s ) 1E -2 1E -3 1E -2 1E -1 1E +0 1E +1 1E +2 5E +2 V T M (V ) 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 F ig. 5 S urge peak on-state current vers us : number of cycles . F ig. 6 Non-repetitive s urge pea k on-s tate : current for a s inus oidal puls e with width tp < 10ms, and corres ponding value of It. IT S M (A ),I (A ) t s 1000 T j initial=25C IT S M (A ) 110 100 90 80 70 60 50 40 30 20 10 0 t=20ms Non repetitive T j initial=25C One cycle dI/dt limitation: 50A /s IT S M 100 R epetitive T c=95C It Number of ycles c 1 10 100 1000 10 0.01 0.10 tp (ms ) 1.00 10.00 BTB/BTA10 Discrete Triacs(Non-Isolated/Isolated) F ig. 7 R ela tive variation of gate trigger current, : holding current and latching current vers us junction temperature (typical values). IG T,IH,IL [T j] / IG,IH,IL [T j=25C ] T F ig. 8 R ela tive variation of critica l rate of decreas e : of main current versus (dV /dt)c (typical values). 2.5 2.0 2.0 1.8 1.6 1.4 (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c C B IG T 1.5 1.0 0.5 T j(C ) 0.0 -40 -20 0 20 40 60 80 100 120 140 IH & IL 1.2 1.0 0.8 0.6 0.4 0.1 1.0 (dV /dt)c (V /s ) 10.0 B W/C W 100.0 F ig. 9 R elative varia tion of critical rate of : decreas e of main current vers us junction temperature. (dI/dt)c [T j] / (dI/dt)c [T j s pec ified] 6 5 4 3 2 1 0 0 25 50 T j (C ) 75 100 125 |
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