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| AEGIS SEMICONDUTORES LTDA. A1A:80.XX VOLTAGE RATINGS Part Number A1A:80.02 A1A:80.04 A1A:80.06 A1A:80.08 A1A:80.10 A1A:80.12 A1A:80.14 A1A:80.16 VRRM , VR (V) Max. rep. peak reverse voltage TJ = 0 to 180OC 200 400 600 800 1000 1200 1400 1600 TJ = -40 to 0 C 200 400 600 800 1000 1200 1400 1600 O VRSM , VR (V) Max. nonrep. peak reverse voltage TJ = 25 to 180 C 300 500 700 900 1100 1300 1500 1700 O This datasheet applies to: Metric thread: A1A:80.XX, A1B:80.XX Inch thread: A2A:80.XX, A2B:80.XX MAXIMUM ALLOWABLE RATINGS PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 180 -40 to 180 80 125 160 1102 IFSM Max. Peak non-rep. surge current 1201 A 1312 1430 5.49 I2t Max. I2t capability 5.98 7.78 8.48 It 2 1/2 UNITS O O NOTES 180 half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms O Initial T J = 180 C, rated VRRM applied after surge. O C C C A O IF(RMS) Nom. RMS current A O Initial T J = 180 C, no voltage applied after surge. O Initial T J = 180 C, rated VRRM applied after surge. kA2s t = 8.3 ms t = 10ms O Initial T J = 180 C, no voltage applied after surge. Max. I t 2 1/2 capability t = 8.3 ms Initial T J = 180O C, no voltage applied after surge. kA2s1/2 N.m(Lbf.in) I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). - F Mounting Force 55 220 4(~30) AEGIS SEMICONDUTORES LTDA. A1A:80.XX CHARACTERISTICS PARAMETER VFM Peak forward voltage VF(TO)1 Low-level threshold VF(TO)2 High-level threshold rF1 Low-level resistance rF2 High-level resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. --------------------TYP. 1.35 ------------------MAX. UNITS 1.60 0.86 1.00 2.50 1.53 5.00 0.55 0.60 0.70 0.20 O O O TEST CONDITIONS Initial T J = 25 C, sinusoidal wave, Ipeak = 220A. O TJ = 180 C Av. power = V F(TO) * IF(AV) +rF * [IF(RMS)]2 Use low values for IFM < pIF(AV) TJ = 180 C. Max. Rated VRRM O O O V V mW mA C/W DC operation C/W 180 sine wave C/W 120O rectangular wave C/W Mtg. Surface smooth, flat and greased. Single side. ----- O ----17(0.6) DO-203AB (DO-5) g(oz.) JEDEC 210 200 190 Case Temperature vs. Forward Current 200 Power Dissipation vs. Forward Current Maximum Average Power Dissipation (W) 180 Rec180 Sen120 160 Sen60 Rec60 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 180 Rec120 Sen180 DC Case Temperature (C) 180 170 160 150 140 130 120 Sen120 Rec120 Sen180 Rec180 110 100 90 0 20 40 Sen60 Rec60 DC 140 160 180 60 80 100 120 Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Forward Power Loss Characteristics AEGIS SEMICONDUTORES LTDA. A1A:80.XX Forward Current vs. Forward Voltage 1.2 Transient Thermal Impedance vs Time Zthjh 1000 Transient Thermal Impedance (C / W) 1.0 Zthjc 0.8 Forward Current (A) 100 175C 0.6 10 25C 0.4 0.2 1 0 1 2 3 4 5 6 7 8 9 0.0 1E-3 0.01 0.1 1 10 100 Forward Voltage (V) Time (s) Fig. 3 - Forward Voltage Drop Characteristics Fig. 4 - Transient Thermal Impedance DO-5 SW 17 M8 x 1.25 1/4" UNF 2A |
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