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HWL27YRA L-Band GaAs Power FET Autumn 2002 V1 Features * * * * Low Cost GaAs Power FET Class A or Class AB Operation Greater than 17 dB Gain 5V to 10V Operation Outline Dimensions Description The HWL27YRA is a Medium Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package. Absolute Maximum Ratings VDS VGS ID IG TCH TSTG PT * Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation +15V -5V IDSS 2mA 175C -65 to +175C 3.5W RA Package (Ceramic) * mounted on an infinite heat sink Electrical Specifications (TA=25C) f = 2400 MHz for all RF Tests Symbol IDSS VP Parameters & Conditions Saturated Current at VDS=3V, VGS=0V Pinch-off Voltage at VDS=3V, ID=20mA Transconductance at VDS=3V, ID=200mA Thermal Resistance Power Output at Test Points VDS=10V, ID=0.5IDSS Gain at 1dB Compression Point VDS=10V, ID=0.5IDSS Power-Added Efficiency (POUT = P1dB) VDS=10V, ID=0.5IDSS Units mA V mS C/W dBm dB % Min. 300 -3.5 27.5 16 35 Typ. 400 -2.0 250 30 29 17 42 Max. 600 -1.5 40 - gm Rth P1dB G1dB PAE Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. HWL27YRA L-Band GaAs Power FET Autumn 2002 V1 Typical Performance at 25C Output Power & Efficiency & Gain vs Input Power @ f=1.9 GHz, Vds=10V, Ids = 0.5 Idss Po (dBm) 30 25 20 30 15 Gain 10 5 0 0 4 8 12 16 20 10 0 Pin (dBm) Po Gain Eff PAE (%) 50 40 Output Power & Efficiency & Gain vs Input Power @ f=2.4 GHz, Vds=10V, Ids = 0.5 Idss Po (dBm) 30 25 20 30 15 Gain 10 5 0 0 4 8 12 16 20 10 0 Pin (dBm) Po Gain Eff PAE (%) 50 40 Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. HWL27YRA L-Band GaAs Power FET Autumn 2002 V1 Power Derating Curve Total Power Dissipation,PT (W) 6 4 (25,3.5) 2 (175,0) 0 0 50 100 150 200 Case Temperature,TC () Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. HWL27YRA L-Band GaAs Power FET Autumn 2002 V1 Small Signal Common Source Scattering Parameters S-MAGN AND ANGLES VDS=10V, IDS=0.5IDSS (GHz) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 lS11l 0.982 0.971 0.964 0.937 0.933 0.924 0.918 0.913 0.909 0.904 0.901 0.898 0.896 0.892 0.891 0.891 0.887 0.886 0.886 0.884 0.885 0.882 0.884 0.881 0.880 0.878 0.881 0.876 0.87 0.873 0.870 0.872 0.869 0.863 0.862 0.861 ANG -61.461 -69.936 -81.633 -90.910 -98.950 -106.780 -113.821 -120.643 -126.386 -131.833 -136.947 -141.533 -145.822 -149.743 -153.407 -156.920 -159.832 -162.929 -165.820 -168.354 -170.866 -173.301 -175.371 -177.307 -179.342 178.271 176.581 174.575 172.901 171.118 169.291 167.418 165.617 163.932 162.100 160.391 lS21l 9.844 9.365 8.899 8.363 7.961 7.490 7.061 6.612 6.291 5.935 5.614 5.305 5.059 4.789 4.549 4.345 4.134 3.948 3.775 3.616 3.465 3.316 3.191 3.060 2.947 2.840 2.750 2.634 2.568 2.466 2.395 2.325 2.254 2.193 2.128 2.089 ANG 136.813 129.921 121.728 115.284 108.905 102.487 97.625 91.913 86.997 82.084 77.424 72.989 68.707 64.775 60.313 56.755 52.907 49.197 45.842 42.255 39.068 35.427 32.807 29.347 26.673 23.149 20.485 17.300 14.637 12.009 8.989 6.724 4.003 1.711 -1.228 -3.083 lS12l 0.013 0.014 0.015 0.017 0.018 0.019 0.020 0.020 0.020 0.021 0.021 0.021 0.021 0.021 0.021 0.021 0.020 0.020 0.021 0.020 0.020 0.019 0.019 0.019 0.018 0.019 0.019 0.019 0.018 0.018 0.019 0.019 0.018 0.018 0.017 0.018 ANG 52.623 47.681 44.018 36.674 30.805 28.107 22.025 17.253 13.667 13.004 9.034 5.959 3.927 -0.675 -3.457 -3.585 -6.903 -11.613 -11.788 -13.795 -14.222 -16.583 -19.663 -21.313 -21.557 -23.821 -22.535 -23.390 -24.783 -25.211 -28.791 -27.836 -31.087 -31.379 -31.508 -32.003 lS22l 0.447 0.444 0.428 0.420 0.428 0.428 0.41 0.414 0.419 0.423 0.427 0.431 0.439 0.444 0.460 0.464 0.478 0.483 0.499 0.509 0.520 0.531 0.541 0.558 0.564 0.583 0.589 0.605 0.613 0.630 0.637 0.652 0.662 0.670 0.680 0.685 ANG -32.966 -38.731 -45.320 -49.001 -55.306 -61.485 -64.461 -70.907 -74.910 -80.144 -84.795 -89.459 -93.888 -98.561 -102.778 -106.597 -110.863 -115.106 -118.232 -122.794 -125.298 -130.150 -132.364 -136.654 -138.636 -142.943 -145.194 -148.236 -151.402 -153.160 -156.297 -157.090 -160.219 -160.919 -163.691 -164.095 Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. |
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