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6MBI225U-120
IGBT Module U-Series
Features
* High speed switching * Voltage drive * Low inductance module structure
1200V / 225A 6 in one-package
Applications
* Uninterruptible power supply * Inverter for Motor drive * AC and DC Servo drive amplifier * Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25C unless otherwise specified)
Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso Conditions Rating 1200 20 300 225 600 450 225 450 1040 +150 -40 to +125 2500 Unit V V A
Continuous Tc=25C Tc=80C 1ms Tc=25C Tc=80C
1 device Collector Power Dissipation Junction temperature Storage temperature AC:1min. Isolation voltage between terminal and copper base *1 between thermistor and others *2 3.5 Screw Torque Mounting *3 4.5 Terminals *4 *1 : All terminals should be connected together when isolation test will be done. *2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. *3 :Recommendable value : 2.5 to 3.5 N*m(M5) *4 :Recommendable value : 3.5 to 4.5 N*m(M6)
W C VAC N*m
Electrical characteristics (at Tj=25C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr R lead R Conditions VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=225mA VGE=15V, IC=225A Tj=25C Tj=125C Tj=25C Tj=125C VCE=10V, VGE=0V, f=1MHz VCC=600V IC=225A VGE=15V RG=3 VGE=0V IF=225A Tj=25C Tj=125C Tj=25C Tj=125C Characteristics Min. Typ. - - - - 4.5 6.5 - 2.00 - 2.25 - 1.75 - 2.00 - 25 - 0.36 - 0.21 - 0.03 - 0.37 - 0.07 - 1.85 - 1.95 - 1.60 - 1.70 - - - 1.0 - 5000 465 495 3305 3375 Unit Max. 3.0 600 8.5 2.35 - 2.10 - - 1.20 0.60 - 1.00 0.30 2.15 - 1.90 - 0.35 - - 520 3450 mA nA V V
Inverter
Input capacitance Turn-on time
nF s
Turn-off time Forward on voltage
V
B value B *4:Biggest internal terminal resistance among arm.
Thermistor
Reverse recovery time Lead resistance, terminal-chip*4 Resistance
IF=225A T=25C T=100C T=25/50C
s m
Thermal resistance characteristics
Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*5 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. - - - - - 0.0167 Unit Max. 0.12 0.20 - C/W C/W C/W
*5 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
6MBI225U-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip
600 600
IGBT Module
Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip
500 VGE=20V Collector current : Ic [A] 400 15V 12V Collector current : Ic [A]
500
VGE=20V
15V
12V
400
300
300 10V 200
10V
200
100 8V 0 0 1 2 3 4 5
100
8V
0 0 1 2 3 4 5
Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip
600 500 Collector current : Ic [A] T j=25C 400 300 200 100 10
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip
Collector - Emitter voltage : VCE [ V ]
8
6
T j=125C
4
2
Ic=450A Ic=225A Ic= 112.5A 5 10 15 20 25
0 0 1 2 3 4
0
Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1M Hz, Tj= 25C
100.0 Cies Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ]
Dynamic Gate charge (typ.) Vcc=600V, I=225A, Tj= 25C
Capacitance : Cies, Coes, Cres [ nF ]
10.0 Cres
VGE
1.0
Coes
VCE
0.1 0 10 20 30
0
0 200 400 600 800 1000 1200 1400
6MBI225U-120
Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=3, Tj= 25C
10000 10000
IGBT Module
Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=3, Tj=125C
Switching time : ton, tr, toff, tf [ nsec ]
1000 ton toff tr 100 tf
Switching time : ton, tr, toff, tf [ nsec ]
1000 toff ton tr 100
tf
10 0 100 200 300 400 Collector current : Ic [ A ]
10 0 100 200 300 400 Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=225A, VGE=15V, Tj= 25C
10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 50
Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=3
Switching time : ton, tr, toff, tf [ nsec ]
Eoff(125C) 40 Eon(125C) Eoff(25C) 20
ton toff 1000
30
tr 100 tf
Eon(25C) Err(125C) Err(25C)
10
10 1 10 Gate resistance : Rg [ ] 100
0 0 100 200 300 400 500
Collector current : Ic [ A ]
Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=225A, VGE=15V, Tj= 125C
Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 3 ,Tj <= 125C Stray inductance <= 100nH
150 Eon Switching loss : Eon, Eoff, Err [ mJ/pulse ] 125 100 Collector current : Ic [ A ] 100
600
500
400
75 Eoff 50 25 Err 0 1 10 Gate resistance : Rg [ ]
300
200
100
0 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage : VCE [ V ]
6MBI225U-120
Forward current vs. Forward on voltage (typ.) chip
600 1000
IGBT Module
Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=3
Forward current : IF [ A ]
T j=25C 400 T j=125C 300
Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
500
100
Irr (125C) Irr (25C) trr (125C) trr (25C)
200
100
0 0 1 2 3 4 Forward on voltage : VF [ V ]
10 0 100 200 300 400 500 Forward current : IF [ A ]
Transient thermal resistance (max.)
1.000 FWD Resistance : R [ k ] 10 100
Temperature characteristic (typ.)
Thermal resistanse : Rth(j-c) [ C/W ]
0.100
IGBT
0.010
1
0.001 0.001
0.1 0.010 0.100 1.000 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature [C ]
Pulse width : Pw [ sec ]
6MBI225U-120
Outline Drawings, mm M629
IGBT Module
Equivalent Circuit Schematic
[Inverter]
2 4 6
[Thermister]
11 12
9
10
7 8
1
3
5

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