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| AON4803 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AON4803 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltage as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Standard Product AON4803 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = -20V ID = -3.4A (V GS = -4.5V) RDS(ON) < 90m (VGS = -4.5V) RDS(ON) < 120m (VGS = -2.5V) RDS(ON) < 165m (VGS = -1.8V) D1 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 D2 G1 S1 G2 S2 DFN3X2-8L Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25C Continuous Drain Current A Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead B MOSFET -20 8 -3.4 -2.7 -15 1.7 1.1 -55 to 150 Typ 51 88 28 Max 75 110 35 Units V V A VGS TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG Symbol RJA RJL W C Units C/W Alpha & Omega Semiconductor, Ltd. AON4803 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-3.4A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-2.5V, ID=-2.5A VGS=-1.8V, ID=-1.5A gFS VSD IS Forward Transconductance VDS=-5V, ID=-3.4A 4 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.3 -15 73 103 100 135 7 -0.76 -1 -2 540 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 72 49 12 6.1 VGS=-4.5V, VDS=-10V, ID=-3.4A 0.6 1.6 10 VGS=-4.5V, VDS=-10V, RL=2.9, RGEN=3 IF=-3.4A, dI/dt=100A/s 2 Min -20 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current -1 -5 100 -0.65 -1 90 125 120 165 A nA V A m m m S V A pF pF pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance 700 SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time 7.9 nC nC nC ns ns ns ns ns nC 12 44 22 21 7.5 Body Diode Reverse Recovery Charge IF=-3.4A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 0. December 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AON4803 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 -4.5V -3.0V -8V 10 -ID (A) -ID(A) -2.0V 4 3 2 VGS=-1.5V 1 0 0 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics 1 5 0 0 1 1.5 -VGS(Volts) Figure 2: Transfer Characteristics 0.5 2 125C 25C -2.5V 5 6 VDS=-5V 5 165 180 Normalized On-Resistance 160 140 120 100 80 60 0 1 2 3 4 5 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 ID=-3.4A 170 VGS=-4.5V VGS=-2.5V VGS=-1.8V 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 1E-01 125C 25C VGS=-1.8V ID=-1.5A VGS=-2.5V ID=-2.5A RDS(ON) (m) VGS=-4.5V ID=-3.4A RDS(ON) (m) 110 125C -IS (A) 140 1E-02 1E-03 1E-04 80 25C 1E-05 1E-06 50 1 2 3 4 5 6 7 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AON4803 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 -VGS (Volts) 3 2 1 0 0 2 4 6 8 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-10V ID=-3.4A Capacitance (pF) 600 800 Ciss 400 200 Crss Coss 0 0 5 10 165 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 20 RDS(ON) limited TJ(Max)=150C TA=25C 10s 15 Power (W) 100s 1ms DC 10ms 0.1s 1s 10s TJ(Max)=150C TA=25C 10.0 ID (Amps) 1.0 10 0.1 5 0.0 0.01 0.1 1 VDS (Volts) 10 100 0 0.001 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=110C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse 0.01 0.00001 PD Ton T 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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