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| TSC5302D High Voltage NPN Transistor with Diode TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 400V 700V 2A 1.1V @ IC / IB = 1A / 0.25A Features Build-in Free-wheeling Diode Makes Efficient Anti-saturation Operation No Need to Interest an hfe Value Because of Low Variable Storage-time Spread Even Though Comer Spirit Product. Low Base Drive Requirement Suitable for Half Bridge Light Ballast Application Block Diagram Structure Silicon Triple Diffused Type NPN Silicon Transistor with Diode Ordering Information Part No. TSC5302DCP RO TSC5302DCH C5 Package TO-252 TO-251 Packing 2.5Kpcs / 13" Reel 70pcs / Tube Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current (tp <5ms) Base Current Base Peak Current (tp <5ms) Total Dissipation @ Tc 25 C Maximum Operating Junction Temperature Storage Temperature Range o Symbol VCBO VCEO VEBO IC ICM IB IBM TO-251 TO-252 Ptot TJ TSTG Limit 700V 400V 10 2 4 1 2 25 1.5 +150 -65 to +150 Unit V V V A A A A W o o C C 1/6 Version: A07 TSC5302D High Voltage NPN Transistor with Diode Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance Symbol RJC RJA Limit 6.25 100 Unit o o C/W C/W Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage a a a Conditions IC = 1mA, IB = 0 IC = 10mA, IE = 0 IE = 1mA, IC = 0 VCB = 700V, IE = 0 VEB = 9V, IC = 0 IC =0.5A, IB =0.1A IC =1A, IB =0.25A IC =0.5A, IB =0.1A IC =1A, IB =0.25A VCE =5V, IC =10mA VCE =5V, IC =400mA VCE =5V, IC =1A VCC =250V, IC =1A, IB1=IB2 =0.2A, tp =25uS Duty Cycle<1% IC =1A IC =1A Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT)1 VCE(SAT)2 VBE(SAT)1 VBE(SAT)2 hFE 1 hFE 2 hFE 3 tON tSTG tf tF Vf Min 700 400 10 ------10 10 5 ------ Typ ------------0.15 0.5 0.2 --- Max ---1 1 0.5 1.1 1.1 1.2 -30 -0.3 0.9 0.4 800 1.4 Unit V V V uA uA V V DC Current Gain Turn On Time Storage Time Fall Time uS uS uS uS V Diode Fall Time Forward Voltage Drop Notes: a. Pulsed duration = 300uS, duty cycle 2% 2/6 Version: A07 TSC5302D High Voltage NPN Transistor with Diode Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. Static Characteristics Figure 2. DC Current Gain Figure 3. Vce(sat) v.s. Vbe(sat) Figure 4. Power Derating 3/6 Version: A07 TSC5302D High Voltage NPN Transistor with Diode SOT-252 Mechanical Drawing DIM A A1 B C D E F G G1 G2 H I J K L M TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.3BSC 0.09BSC 4.6BSC 0.18BSC 6.80 7.20 0.268 0.283 5.40 5.60 0.213 0.220 6.40 6.65 0.252 0.262 2.20 2.40 0.087 0.094 0.00 0.20 0.000 0.008 5.20 5.40 0.205 0.213 0.75 0.85 0.030 0.033 0.55 0.65 0.022 0.026 0.35 0.65 0.014 0.026 0.90 1.50 0.035 0.059 2.20 2.80 0.087 0.110 0.50 1.10 0.020 0.043 0.90 1.50 0.035 0.059 1.30 1.70 0.051 0.67 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 4/6 Version: A07 TSC5302D High Voltage NPN Transistor with Diode SOT-251 Mechanical Drawing DIM A A1 b C D D1 E E1 e F L L1 TO-251 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.20 2.40 0.087 0.094 1.10 1.30 0.043 0.051 0.55 0.75 0.022 0.030 0.48 0.58 0.019 0.023 6.50 7.00 0.256 0.276 5.50 5.70 0.217 0.224 6.40 6.60 0.252 0.260 5.20 5.40 0.205 0.213 2.25 2.35 0.089 0.093 0.48 0.58 0.019 0.023 7.80 8.20 0.307 0.323 1.00 1.30 0.039 0.051 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 5/6 Version: A07 TSC5302D High Voltage NPN Transistor with Diode Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: A07 |
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