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| SK30GH123 Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITOP(R) 3 IGBT Module SK30GH123 Module Preliminary Data Inverse Diode Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications GH 1 30-10-2006 DIL (c) by SEMIKRON SK30GH123 Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITOP(R) 3 IGBT Module SK30GH123 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Preliminary Data Features Typical Applications GH 2 30-10-2006 DIL (c) by SEMIKRON SK30GH123 Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 30-10-2006 DIL (c) by SEMIKRON SK30GH123 Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 30-10-2006 DIL (c) by SEMIKRON SK30GH123 UL recognized file no. E 63 532 5 30-10-2006 DIL (c) by SEMIKRON |
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