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TPCS8213
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS)
TPCS8213
Lithium Ion Battery Applications
* * * * * * Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 8.4 m (typ.) High forward transfer admittance: |Yfs| = 13 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~1.4 V (VDS = 10 V, ID = 200 A) Common drain Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating 20 20 12 6 24 1.1 W 0.75 0.6 W 0.35 9.4 6 0.075 150 -55~150 mJ A mJ C C Unit V V V A
Single-device Drain power operation (Note 3a) dissipation (t = 10 s) Single-device value (Note 2a) at dual operation (Note 3b) Drain power dissipation (t = 10 s) Single-device value (Note 2b) at dual operation (Note 3b) Single-pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range Single-device operation (Note 3a)
JEDEC JEITA TOSHIBA
2-3R1E
Weight: 0.035 g (typ.)
Circuit Configuration
8 7 6 5
Note: For Notes 1 to 5, see the next page.
1
2
3
4
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
WARNING Handling Precaution for Power MOSFET in use of Protection Circuit for Battery Pack Flame-retardant resins of UL94-V0 flammability class are used in packages, however, they are not noncombustible.Use a unit, for example PTC Thermistor, which can shut off the power supply if a short-circuit occurs. If the power supply is not shut off on the occurring short-circuit,a large short-circuit current will flow continuously, which may cause the device to catch fire or smoke.
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TPCS8213
Thermal Characteristics
Characteristic Symbol Max Unit
Thermal resistance, channel to ambient (Note 2a) Single-device value at (t = 10 s) dual operation (Note 3b) Single-device operation (Note 3a)
Single-device operation (Note 3a)
Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2)
114 C/W 167
208 C/W 357
Thermal resistance, channel to ambient (Note 2b) Single-device value at (t = 10 s) dual operation (Note 3b)
Marking (Note 6)
Type
S8213
Lot No.
Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: a) Device mounted on a glass-epoxy board (a)
FR-4 25.4 x 25.4 x 0.8 (unit: mm)
b)
Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (unit: mm)
(a)
(b)
Note 3: a) b) The power dissipation and thermal resistance values are shown for a single device. (During single-device operation, power is applied to one device only.) The power dissipation and thermal resistance values are shown for a single device. (During dual operation, power is applied to both devices evenly.)
Note 4: VDD = 16 V, Tch = 25C (initial), L = 0.2 mH, RG = 25 , IAR = 6 A Note 5: Repetitive rating: pulse width limited by max channel temperature Note 6: The circle "" on lower right of the marking indicates Pin 1. * Weekly code (three digits): Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year)
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TPCS8213
Electrical Characteristics (Ta = 25C)
Characteristic Symbol Test Condition Min Typ. Max 10 Unit A A
Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage
IGSS IDSS V (BR) DSS V (BR) DSX Vth
VGS = 10 V, VDS = 0 V VDS = 20 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -12 V VDS = 10 V, ID = 200 A VGS = 2.5 V, ID = 4.2 A
10

20 8 0.5

V V
1.4 18 13 12

11 8.7 8.4 13 3140 385 425 20 30 23 84 49 6 13
Drain-source ON-resistance
RDS (ON)
VGS = 4.0 V, ID = 4.8 A VGS = 4.5 V, ID = 4.8 A
m
Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("Miller") charge
|Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs1 Qgd
VDS = 10 V, ID = 3.0 A VDS = 10 V, VGS = 0 V, f = 1 MHz
6.5

S
pF
RL = 3.3
5V VGS 0V
4.7
ID = 3 A
VOUT

ns

VDD 10 V - Duty < 1%, tw = 10 s =
VDD 16 V, VGS = 5 V, ID = 6 A -

nC
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Drain reverse current Forward voltage (diode)
Pulse (Note 1)
IDRP VDSF
24
-1.2
A V
IDR = 6 A, VGS = 0 V
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TPCS8213
ID - VDS
10 4.5 4 2.5 3.1 2 20 COMMON SOURCE Ta = 25C, PULSE TEST 3.1 4 4.5 2.2 2.5
ID - VDS
COMMON SOURCE 2.1 Ta = 25C PULSE TEST
DRAIN CURRENT ID (A)
8 1.9 6 1.8 4 1.7 2 1.6 VGS = 1.5 V 0 0 0.2 0.4 0.6 0.8 1.0
DRAIN CURRNET ID (A)
16
12
2 1.9
8 1.8 4 VGS = 1.5 V 0 0 1 2 3 4 1.7 1.6 5
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
ID - VGS
12 0.5
VDS - VGS
DRAIN-SOURCE VOLTAGE VDS (V)
COMMON SOURCE Ta = 25C 0.4 PULSE TEST
COMMON SOURCE 10 VDS = 10 V PULSE TEST 8 25 6 100 4 Ta = -55C
DRAIN CURRENT ID (A)
0.3
0.2
2
0.1
ID = 1.5 A
12 6 3
0 0
1
2
3
0 0
2
4
6
8
10
12
GATE-SOURCE VOLTAGE VGS
(V)
GATE-SOURCE VOLTAGE VGS
(V)
|Yfs| - ID
100 100
RDS (ON) - ID
COMMON SOURCE Ta = 25C PULSE TEST
FORWARD TRANSFER ADMITTANCE |Yfs| (S)
30 Ta = -55C 10
25
DRAIN-SOURCE ON-RESISTANCE RDS (ON) (m)
50
50 30
100
2.5 10 4 5 3 VGS = 4.5 V
5 3 COMMON SOURCE VDS = 10 V PULSE TEST 1 0.1 0.3 0.5 1 3 5 10 30 50 100
1 0.1
0.3 0.5
1
3
5
10
30 50
100
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
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TPCS8213
RDS (ON) - Ta
30 100 COMMON SOURCE PULSE TEST ID = 6 A 3 1.5
IDR - VDS
DRAIN REVERSE CURRENT IDR (A)
50 30 5 10 3 5 3 1 0 VGS = -1 V COMMON SOURCE Ta = 25C PULSE TEST -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 10
DRAIN-SOURCE ON-RESISTANCE RDS (ON) (m)
20
10
2.5
1 0.5 0.3
VGS = 4, 4.5 V
0 -80
-40
0
40
80
120
160
0.1 0
AMBIENT TEMPERATURE
Ta (C)
DRAIN-SOURCE VOLTAGE VDS (V)
C - VDS
10000 2.0
Vth - Ta
Vth (V)
COMMON SOURCE VDS = 10 V 1.6 ID = 200 A PULSE TEST Ciss
(pF)
1000 Coss Crss 100 COMMON SOURCE Ta = 25C VGS = 0 V f = 1 MHz 10 0.1 1 10 100
GATE THRESHOLD VOLTAGE
CAPACITANCE C
1.2
0.8
0.4
0 -80
-40
0
40
80
120
160
AMBIENT TEMPERATURE
Ta (C)
DRAIN-SOURCE VOLTAGE VDS (V)
PD - Ta
1.2
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
20
PD (W)
DRAIN-SOURCE VOLTAGE VDS (V)
(1)
16
DRAIN POWER DISSIPATION
0.8
(2) (3)
12
VDS
6
0.6
8
8 8 4 4 VDD = 16 V
4
0.4
(4)
0.2
4
2 VGS
0 0
50
100
150
200
0 0
10
20
30
40
50
0 60
AMBIENT TEMPERATURE
Ta (C)
TOTAL GATE CHARGE Qg (nC)
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GATE-SOURCE VOLTAGE VGS
1
Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s
VDD = 16 V
COMMON SOURCE ID = 6 A Ta = 25C, PULSE TEST
10
8
(V)
TPCS8213
rth - tw
1000
TRANSIENT THERMAL IMPEDANCE rth (C/W)
Device mounted on a glass-epoxy board (a) (Note 2a) 500 (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) 300 Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b)
(4) (3) (2) (1)
100
50 30
10 5 3
1 0.5 0.3 SINGLE PULSE 0.1 0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH tw
(s)
SAFE OPERATING AREA
100 Single-device value at dual operation (Note 3b) ID max (PULSE) *
DRAIN CURRENT ID (A)
10
1 ms *
10 ms *
1 * Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 10
VDSS max 100
DRAIN-SOURCE VOLTAGE VDS (V)
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TPCS8213
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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