View TPCM8001-H07_4127262.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

TPCM8001-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPCM8001-H
High-Efficiency DCDC Converter Applications Notebook PC Applications Portable-Equipment Applications
4.650.3
Unit: mm
0.50.1 0.8 8 0.250.05 5 0.05 M A
3.650.2
* * * * * * *
Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 6.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7 m (typ.) High forward transfer admittance: |Yfs| =36 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
0.20 0.2
1 0.750.05
4
0.55 0.1660.05 A
3.50.2
S
1
4
0.60.1
2.750.2
Absolute Maximum Ratings (Ta = 25C)
8 5
2.20.2 0.80.1
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1)
Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR
Rating 30 30 20 20 60 30 2.3
Unit V V V A W W
1,2,3SOURCE 5,6,7,8DRAIN
4GATE
JEDEC JEITA TOSHIBA
2-4L1A
Pulsed (Note 1) (Tc=25C) (t = 10 s) (Note 2a)
Weight: 0.028 g (typ.)
Drain power dissipation Drain power dissipation
Circuit Configuration
8 7 6 5
Drain power dissipation
(t = 10 s) (Note 2b)
1.0
W
Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25C) (Note 4) Channel temperature Storage temperature range
104 20 1.8 150 -55 to 150
mJ A mJ C C
EAR Tch Tstg
1
2
3
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-11-16
1.050.2
0.05 S
4
TPCM8001-H
Thermal Characteristics
Characteristic Thermal resistance, channel to case (Tc=25C) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-c) Max 4.17 Unit C/W
Rth (ch-a)
54.3
C/W
Thermal resistance, channel to ambient (t = 10 s) (Note 2b)
Rth (ch-a)
125
C/W
Marking (Note 5)
M8001 H
Part No. (or abbreviation code) Lot No.
Note 1: The channel temperature should not exceed 150C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
(a)
(b)
Note 3: VDD = 24 V, Tch = 25C (initial), L = 0.2 mH, RG = 25 , IAR = 20 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year)
2
2006-11-16
TPCM8001-H
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("Miller") charge Gate switch charge tf toff Qg Qgs1 Qgd QSW VDD 24 V, VGS = 10 V, ID = 20 A - Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS ton 10 V 0V 4.7 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 10 A VGS = 10 V, ID = 10 A VDS = 10 V, ID = 10 A Min 30 15 1.1 18 ID = 10A VOUT RL = 1.5 Typ. 10 7 36 1130 120 480 2.5 9 3 19 19 11 3.9 4.0 6.0 Max 10 10 2.3 14 9.5 ns nC pF Unit A A V V m S
VDD 15 V - < 1%, tw = 10 s Duty = VDD 24 V, VGS = 10 V, ID = 20 A - VDD 24 V, VGS = 5 V, ID = 20 A -
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = 20 A, VGS = 0 V Min Typ. Max 60 -1.2 Unit A V
3
2006-11-16
TPCM8001-H
ID - VDS
20 10 8 16 4 3.8 3.6 Common source Ta = 25C Pulse test 50 10 8 6 5 4.5
ID - VDS
4.2 4 Common source Ta = 25C Pulse test
(A)
(A)
6 5
3.4 3.3
40
3.8 3.6
ID
12 4.5 3.2 8 3.0 4 VGS = 2.8 V 0
ID Drain current
30
Drain current
20
3.4
3.2 10 VGS = 3 V
0
0.2
0.4
0.6
0.8
1.0
0
0
0.4
0.8
1.2
1.6
2.0
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
ID - VGS
50 Common source VDS = 10 V Pulse test 0.5
VDS - VGS
Common source Ta = 25C Pulse test
(V)
0.4
40
(A)
ID
20 25 10 100 0 Ta = -55C
Drain-source voltage
30
VDS
0.3 0.2 ID = 20 A 0.1 5 10 0 1 2 3 4 5 0 0
Drain current
6
2
4
6
8
10
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
Yfs - ID (S)
100 Common source VDS = 10 V Pulse test 10 Ta = -55C 25 100
RDS (ON) - ID
100 Common source Ta = 25C Pulse test
|Yfs|
Forward transfer admittance
Drain-source ON-resistance RDS (ON) (m)
VGS = 4.5 V 10
1
10
0.1 0.1
1
10
100
1 0.1
1
10
100
Drain current
ID
(A)
Drain current
ID
(A)
4
2006-11-16
TPCM8001-H
RDS (ON) - Ta
20
IDR - VDS
100 Common source Ta = 25C Pulse test 10
Drain-source ON-resistance RDS (ON) (m)
16 10 12 VGS = 4.5 V 8
5
IDR
ID = 20 A
(A)
Common source Pulse test
Drain reverse current
4.5 10 3
ID = 20, 10, 5 A
1 VGS = 0 V
4
VGS = 10 V
0 -80
-40
0
40
80
120
160
1
0
-0.2
-0.4
-0.6
-0.8
-1.0
Ambient temperature
Ta
(C)
Drain-source voltage
VDS
(V)
Capacitance - VDS
10000 2.5
Vth - Ta Vth (V)
Common source VDS = 10 V ID = 1 mA Pulse test
(pF)
2.0
Gate threshold voltage
1000
Ciss 1.5
Capacitance
C
Coss 100 Common source VGS = 0 V f = 1 MHz Ta = 25C 10 0.1 1 10 100
1.0
Crss
0.5
0 -80
-40
0
40
80
120
160
Drain-source voltage
VDS
(V)
Ambient temperature
Ta
(C)
PD - Ta
3.0 50
Dynamic input/output characteristics
Common source ID = 20 A Ta = 25C Pulse test 20
(W)
2.5
Drain power dissipation
2.0
10s
VDS
board (b) (Note 2b)
Drain-source voltage
30 VDS 20 16
12
1.5 (2)
1.0
8
VDD = 32 V
8
0.5
10 VGS 0 0 8 16 24 32
4
0 0
40
80
120
160
0 40
Ambient temperature
Ta
(C)
Total gate charge
Qg
(nC)
5
2006-11-16
Gate-source voltage
VGS
(1)
(2) Device mounted on a glass-epoxy
(V)
PD
40
16
(V)
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
TPCM8001-H
rth - tw
1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc=25C 100
rth (C/W)
(2) (1)
Transient thermal impedance
10 (3)
1
Single - pulse 0.1 0.001 0.01 0.1 1 10 100 1000
Pulse width
tw
(s)
Safe operating area
100
PD - Tc
50
t =1 ms *
(W) Drain power dissipation PD
40 30 20 10 0 0 100
ID max (Pulse) *
(A)
10
ID max (Continuous)
10 ms *
ID
Drain current
DC operation Tc = 25C
1
* Single - pulse Ta = 25C Curves linearly must with be derated in VDSS max 1 10 increase
temperature. 0.1 0.1
40
80
120
160
Case temperature
TC
(C)
Drain-source voltage
VDS
(V)
6
2006-11-16
TPCM8001-H
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
7
2006-11-16

▲Up To Search▲

Price & Availability of TPCM8001-H07

	To Download TPCM8001-H07 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .