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NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Wesentliche Merkmale * Speziell geeignet fur Anwendungen im Bereich von 450 nm bis 1100 nm * Hohe Linearitat * TO-18, Bodenplatte, klares Epoxy-Gieharz, mit Basisanschlu * Gruppiert lieferbar Anwendungen * Lichtschranken fur Gleich- und Wechsellichtbetrieb * Industrieelektronik * Messen/Steuern/Regeln" Typ Type SFH 302 Bestellnummer Ordering Code Q62702-P1641 Features * Especially suitable for applications from 450 nm to 1100 nm * High linearity * TO-18, base plate, transparent exposy resin lens, with base connection * Available in groups Applications * Photointerrupters * Industrial electronics * For control and drive circuits 2001-02-22 1 SFH 302 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur bei Tauchlotung Lotstelle 2 mm vom Gehause, Lotzeit t 5 s Dip soldering temperature 2 mm distance from case bottom, soldering time t 5 s Lottemperatur bei Kolbenlotung Lotstelle 2 mm vom Gehause, Lotzeit t 3 s Iron soldering temperature 2 mm distance from case bottom, soldering time t 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, < 10 s Collector surge current Emitter-Basisspannung Emitter-base voltage Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand Thermal resistance Symbol Symbol Wert Value - 40 ... + 80 260 Einheit Unit C C Top; Tstg TS TS 300 C VCE IC ICS VEB Ptot RthJA 50 50 200 7 150 450 V mA mA V mW K/W 2001-02-22 2 SFH 302 Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Parameter Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit Symbol Symbol S max Wert Value 880 450 ... 1100 Einheit Unit nm nm S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessungen der Chipflache Dimensions of chip area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Fotostrom der Kollektor-Basis-Fotodiode Photocurrent of collector-base photodiode Ee = 0.5 mW/cm2, VCB = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCB = 5 V Kapazitat Capacitance VCE = 0 V, f = 1 MHz, E = 0 VCB = 0 V, f = 1 MHz, E = 0 VEB = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current VCE = 10 V, E = 0 A LxB LxW H 0.675 1x1 0.2 ... 0.8 50 mm2 mm x mm mm Grad deg. IPCB IPCB 4.2 12.5 A A CCE CCB CEB ICEO 23 39 47 20 ( 200) pF pF pF nA 2001-02-22 3 SFH 302 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Fotostrom, = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V Ev = 1000 Ix, Normlicht/standard light A VCE = 5 V Symbol Symbol -2 -3 Wert Value -4 -5 -6 Einheit Unit IPCE IPCE 0.4 ... 0.8 0.63 ... 1.25 1 ... 2 1.6 ... 3.2 2.5 mA 1.75 2.8 4.5 7.1 9.5 mA Anstiegszeit/Abfallzeit tr, tf Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-EmitterSattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3, Ee = 0.5 mW/cm2 Stromverstarkung Current gain Ee = 0.5 mW/cm2, VCE = 5 V 1) 1) 9 11 14 17 20 s VCEsat 200 200 200 200 200 mV I PCE ---------I PCB 140 230 360 570 750 - IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. IPCEmin is the min. photocurrent of the specified group. 2001-02-22 4 SFH 302 Relative Spectral Sensitivity Srel = f () Photocurrent IPCE = f (Ee), VCE = 5 V Total Power Dissipation Ptot = f (TA) Output Characteristics IC = f (VCE), IB = Parameter Directional Characteristics Srel = f () 2001-02-22 5 SFH 302 Mazeichnung Package Outlines Radiant sensitive area o4.3 (0.169) o4.1 (0.161) Chip position (2.7 (0.106)) o0.45 (0.018) 3) .04 5) (0 03 1.1 (0. 0.9 .04 EC B 0.9 (0 (0 .03 5) 3) 14.5 (0.571) 12.5 (0.492) 3.6 (0.142) 3.0 (0.118) o5.5 (0.217) o5.2 (0.205) GETY6017 Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg (c) All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-02-22 6 2.54 (0.100) spacing 1.1 |
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