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PD - 96116
IRF8714PBF
Applications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low Gate Charge l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l 100% tested for Rg l Lead-Free
HEXFET(R) Power MOSFET
VDSS
30V
RDS(on) max
Qg
8.7m:@VGS = 10V 8.1nC
A A D D D D
S S S G
1 2 3 4
8 7
6 5
Top View
SO-8
Description The IRF8714PBF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8714PBF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for Notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
30 20 14 11 110 2.5 1.6 0.02 -55 to + 150
Units
V
c
A W W/C C
Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Thermal Resistance
RJL RJA
g Junction-to-Ambient fg
Junction-to-Drain Lead
Parameter
Typ.
--- ---
Max.
20 50
Units
C/W
Notes through are on page 9
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1
08/01/06
IRF8714PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss Rg td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current
Min. Typ. Max. Units
30 --- --- --- 1.35 --- --- --- --- --- 71 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.021 7.1 10.9 1.80 -6.0 --- --- --- --- --- 8.1 1.9 1.0 3.0 2.2 4.0 4.8 1.6 10 9.9 11 5.0 1020 220 110 --- --- 8.7 13 2.35 --- 1.0 150 100 -100 --- 12 --- --- --- --- --- --- 2.6 --- --- --- --- --- --- --- Typ. --- --- ns nC nC V
Conditions
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 14A V VGS = 4.5V, ID = 11A VDS = VGS, ID = 25A
e e
mV/C VDS = VGS, ID = 25A A VDS = 24V, VGS = 0V nA S VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 11A VDS = 15V VGS = 4.5V ID = 11A See Figs. 15 & 16 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 11A
RG = 1.8 See Fig. 18
VGS = 0V VDS = 15V = 1.0MHz Max. 65 11 Units mJ A
pF
Avalanche Characteristics
EAS IAR
d
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 14 15 3.1 A 110 1.0 21 23 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G D
S p-n junction diode. TJ = 25C, IS = 11A, VGS = 0V
TJ = 25C, IF = 11A, VDD = 15V di/dt = 300A/s
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF8714PBF
1000
TOP
1000
VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
100
100
BOTTOM
1 0.1 0.01
10
1 2.3V 0.1
2.3V
60s PULSE WIDTH
Tj = 25C 10 100 1000 0.1
60s PULSE WIDTH
Tj = 150C 10 100 1000
0.001 0.1 1
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0 ID = 14A VGS = 10V
ID, Drain-to-Source Current (A)
100
1.5
10
T J = 150C
1
T J = 25C VDS = 15V 60s PULSE WIDTH
1.0
0.1 1 2 3 4 5 6
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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IRF8714PBF
10000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
5.0 ID= 11A
VGS, Gate-to-Source Voltage (V)
4.0
VDS= 24V VDS= 15V
C, Capacitance (pF)
1000
Ciss Coss Crss
3.0
2.0
100
1.0
10 1 10 VDS, Drain-to-Source Voltage (V) 100
0.0 0 2 4 6 8 10 QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100 T J = 150C 10 T J = 25C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
1msec 100sec
10
10msec
1 VGS = 0V 0.1 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-to-Drain Voltage (V)
1
T A = 25C
Tj = 150C Single Pulse 0.1 0 1 10 100 VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF8714PBF
14 12
ID, Drain Current (A)
2.5
VGS(th) , Gate Threshold Voltage (V)
10 8 6 4 2 0 25 50 75 100 125 150 T A , Ambient Temperature (C)
2.0 ID = 25A
1.5
1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
100
Thermal Response ( Z thJA ) C/W
D = 0.50 10 0.20 0.10 0.05 0.02 0.01
1
SINGLE PULSE ( THERMAL RESPONSE )
0.1
J R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 A 1 2 3 4 4 A
Ri (C/W)
1.9778 7.4731 26.2617 14.2991
i (sec)
0.000165 0.022044 0.82275 28.4
0.01
Ci= i/Ri Ci= i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 1 10 100
0.001 1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF8714PBF
RDS(on), Drain-to -Source On Resistance (m )
25
EAS , Single Pulse Avalanche Energy (mJ)
300
ID = 14A 20
250 200 150 100 50 0
ID TOP 0.82A 1.0A BOTTOM 11A
15 TJ = 125C 10 T J = 25C
5 3 4 5 6 7 8 9 10 11 12
25
50
75
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (C)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
V(BR)DSS
15V
tp
DRIVER
L
0
VDS
L
DUT 1K 20K
S
VCC
RG
20V
D.U.T
IAS tp
+ - VDD
A
0.01
I AS
Fig 14. Unclamped Inductive Test Circuit and Waveform
Id
Fig 15. Gate Charge Test Circuit
Vds Vgs
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 16. Gate Charge Waveform
6
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IRF8714PBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
V DS VGS RG
RD
VDS 90%
D.U.T.
+
-V DD
VGS
Pulse Width 1 s Duty Factor 0.1 %
10% VGS
td(on) tr td(off) tf
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
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IRF8714PBF
9 6 ' & ! % "
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
7 $ $ #
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SO-8 Part Marking Information
@Y6HQG@)AUCDTADTA6IADSA& AHPTA@U 96U@A8P9@AXX QA2A9DTBI6U@TAG@69AAAS@@ QSP9V8UAPQUDPI6G A2AG6TUA9DBDUAPAAUC@A@6S XXA2AX@@F 6A2A6TT@H7GATDU@A8P9@ GPUA8P9@ Q6SUAIVH7@S
DIU@SI6UDPI6G S@8UDAD@S GPBP
;;;; )
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
8
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IRF8714PBF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 1.1mH, RG = 25, IAS = 11A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. R is measured at TJ of approximately 90C.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/2007
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