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PD - 96120
IRF6725MPBF IRF6725MTRPbF
l l l l l l l l l l
RoHS Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 100% Rg tested
Typical values (unless otherwise specified)
DirectFET Power MOSFET RDS(on) Qgs2
3.9nC
VDSS Qg
tot
VGS Qgd
11nC
RDS(on) Qoss
21nC
30V max 20V max 1.7m@ 10V 2.4m@ 4.5V
Qrr
39nC
Vgs(th)
1.8V
36nC
MX
MT MP
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX
Description
The IRF6725MPBF combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6725MPBF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6725MPBF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR
6
Typical RDS(on) (m)
Max.
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche CurrentAg
g
e e f
h
VGS, Gate-to-Source Voltage (V)
30 20 28 22 170 220 190 22
5.0 4.0 3.0 2.0 1.0 0.0 0 5 10 15 20 25 30 35 ID= 22A VDS= 24V VDS= 15V
A
mJ A
5 4 3 2 1 0 0 5 10 T J = 25C
ID = 28A
T J = 125C
15
20
40
VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
QG, Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.75mH, RG = 25, IAS = 22A.
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08/14/07
IRF6725MPBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
30 --- --- --- 1.35 --- --- --- --- --- 150 --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. Max. Units
--- 22 1.7 2.4 1.8 -6.1 --- --- --- --- --- 36 8.8 3.9 11 12 14.9 21 1.3 16 22 19 13 4700 960 420 --- --- 2.2 3.2 2.35 --- 1.0 150 100 -100 --- 54 --- --- --- --- --- --- 2.2 --- --- --- --- --- --- --- pF nC
Conditions
V VGS = 0V, ID = 250A mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 28A VGS = 4.5V, ID = 22A V VDS = VGS, ID = 100A
i i
mV/C A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C nA S VGS = 20V VGS = -20V VDS = 15V, ID = 22A VDS = 15V VGS = 4.5V ID = 22A See Fig. 15 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5VAi ns ID = 22A RG = 1.8 See Fig. 17 VGS = 0V VDS = 15V = 1.0MHz
nC
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ag Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min.
--- --- --- --- ---
Typ. Max. Units
--- --- 0.77 24 39 130 A 220 1.0 36 59 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 22A, VGS = 0V TJ = 25C, IF = 22A di/dt = 260A/s
i
i
Notes:
Pulse width 400s; duty cycle 2%.
2
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IRF6725MPBF
Absolute Maximum Ratings
PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG Power Dissipation e Power Dissipation e Power Dissipation f
Parameter
Max.
2.8 1.8 100 270 -40 to + 150
Units
W
Peak Soldering Temperature Operating Junction and Storage Temperature Range
C
Thermal Resistance
RJA RJA RJA RJC RJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor
100 D = 0.50 0.20 0.10 0.05 0.02 0.01
el jl kl fl
Parameter
Typ.
--- 12.5 20 --- 1.0 0.022
Max.
45 --- --- 1.2 ---
Units
C/W
eA
W/C
Thermal Response ( Z thJA )
10
1
J
R1 R1 J 1 2
R2 R2
R3 R3 3
R4 R4 A 4 A
Ri (C/W)
1.3216 5.1963 21.489 17.005
i (sec)
0.000312 0.040534 1.0378 46
0.1
1
2
3
4
Ci= i/Ri Ci= i/Ri
0.01
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.01 0.1 1 10 100 1000
0.001 1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Used double sided cooling , mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. Notes:
R is measured at TJ of approximately 90C.
Surface mounted on 1 in. square Cu (still air).
Mounted to a PCB with small clip heatsink (still air)
Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
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IRF6725MPBF
1000
TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V
1000
TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
100
100
BOTTOM
1
10 2.3V
0.1
2.3V
60s PULSE WIDTH
0.01 0.1 1 Tj = 25C 1 100 0.1 1 10
60s PULSE WIDTH
Tj = 150C 10 100
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000 VDS = 15V 60s PULSE WIDTH 100 T J = 150C T J = 25C T J = -40C
Typical RDS(on) (Normalized)
Fig 5. Typical Output Characteristics
2.0 ID = 28A V GS = 10V V GS = 4.5V 1.5
ID, Drain-to-Source Current (A)
10
1.0
1
0.1 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
Fig 6. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd
VGS, Gate-to-Source Voltage (V)
Fig 7. Normalized On-Resistance vs. Temperature
7 6 Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 8.0V Vgs = 10V T J = 25C
Typical RDS(on) ( m)
C oss = C ds + C gd
C, Capacitance(pF)
10000 Ciss
5 4 3 2
1000
Coss Crss
100 1 10 VDS, Drain-to-Source Voltage (V) 100
1 0 50 100 150 200
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
Fig 9. Typical On-Resistance vs. Drain Current and Gate Voltage
ID, Drain Current (A)
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IRF6725MPBF
1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec 100 T J = 150C T J = 25C 10 T J = -40C
ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A)
100
10 1msec 1 10msec DC T A = 25C T J = 150C
1 VGS = 0V 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V)
0.1
Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate threshold Voltage (V)
180 160 140
ID, Drain Current (A)
Fig11. Maximum Safe Operating Area
3.0
2.5
120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (C)
2.0 ID = 100A ID = 150A ID = 1.0mA ID = 1.0A 0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) ID = 250A 1.0
1.5
Fig 12. Maximum Drain Current vs. Case Temperature
800
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID 2.1A 2.8A BOTTOM 22A TOP
700 600 500 400 300 200 100 0 25 50 75
100
125
150
Starting T J , Junction Temperature (C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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IRF6725MPBF
Id Vds Vgs
L
0
DUT
20K 1K
S
VCC
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V(BR)DSS
15V
tp
DRIVER
VDS
L
VGS RG
D.U.T
IAS tp
+ - VDD
A
20V
0.01
I AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
VDS V GS RG
RD
VDS 90%
D.U.T.
+
- V DD
VGS
Pulse Width 1 s Duty Factor 0.1 %
10% VGS
td(on) tr t d(off) tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
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IRF6725MPBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
*
* * * *
dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
VDD
**
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET(R) Power MOSFETs
DirectFET Board Footprint, MX Outline (Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
G = GATE D = DRAIN S = SOURCE
D S G S D
D
D
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IRF6725MPBF
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DirectFET Outline Dimension, MX Outline (Medium Size Can, X-Designation).
DIMENSIONS
METRIC CODE A B C D E F G H J K L M R P MIN 6.25 4.80 3.85 0.35 0.68 0.68 1.38 0.80 0.38 0.88 2.28 0.616 0.020 0.08 MAX 6.35 5.05 3.95 0.45 0.72 0.72 1.42 0.84 0.42 1.01 2.41 0.676 0.080 0.17 IMPERIAL MIN 0.246 0.189 0.152 0.014 0.027 0.027 0.054 0.032 0.015 0.035 0.090 0.0235 0.0008 0.003 MAX 0.250 0.201 0.156 0.018 0.028 0.028 0.056 0.033 0.017 0.039 0.095 0.0274 0.0031 0.007
DirectFET Part Marking
GATE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE
Line above the last character of the date code indicates "Lead-Free"
8
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IRF6725MPBF
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6725MTRPBF). For 1000 parts on 7" reel, order IRF6725MTR1PBF STANDARD OPTION METRIC CODE MAX MIN 330.0 A N.C B 20.2 N.C C 13.2 12.8 D 1.5 N.C E 100.0 N.C F N.C 18.4 G 12.4 14.4 H 11.9 15.4 REEL DIMENSIONS (QTY 4800) TR1 OPTION IMPERIAL METRIC MAX MIN MIN MAX 12.992 N.C 177.77 N.C 0.795 N.C 19.06 N.C 0.504 0.520 13.5 12.8 0.059 1.5 N.C N.C 3.937 58.72 N.C N.C N.C 0.724 N.C 13.50 0.488 11.9 0.567 12.01 0.469 11.9 0.606 12.01 (QTY 1000) IMPERIAL MAX MIN N.C 6.9 N.C 0.75 0.50 0.53 0.059 N.C 2.31 N.C 0.53 N.C 0.47 N.C 0.47 N.C
LOADED TAPE FEED DIRECTION
NOTE: CONTROLLING DIMENSIONS IN MM
CODE A B C D E F G H
DIMENSIONS IMPERIAL METRIC MIN MAX MIN MAX 0.311 0.319 7.90 8.10 0.154 0.161 3.90 4.10 0.469 0.484 11.90 12.30 0.215 0.219 5.45 5.55 0.201 0.209 5.10 5.30 0.256 0.264 6.50 6.70 0.059 N.C 1.50 N.C 0.059 0.063 1.50 1.60
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/2007
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