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| MICROWAVE CORPORATION HMC152 General Description The HMC152 is an amplifier with gain controlled with a 5 bit binary word. The magnitude of the voltage gain varies linearly with the value of the control word. This transfer function is used to perform weighted loading of antenna arrays, alignment of monopulse receivers, antenna nulling and digital modulation for communications. The amplifier provides low phase shift vs gain state. Intermodulation performance improves as gain decreases, which is opposite to what occurs in most voltage variable attenuators in which Intermodulation distortion degrades as attenuation is increased. PHASE COMPENSATED VARIABLE GAIN AMPLIFIER 2.5 - 5.0 GHz SEPTEMBER 1999 Features GAIN: 15 dB typ. 1 Amplifiers GAIN ADJUSTMENT RANGE: > 20 dB RELATIVE PHASE SHIFT: 10 DEGREES Guaranteed Performance, -55 to +85 deg C Parameter Gain Gain Adjustment Range Return Loss Relative Phase Shift (Control Word 2 thru 31) Input Power for 1dB Compression Input Third Order Intercept Noise Figure Control Word 31 (Max. Gain): Control Word 2 (Min. Gain): DC Current at Vdd=+5V Frequency 1 - 4 GHz 1 - 4 GHz 1 - 4 GHz 1 - 4 GHz 1 - 4 GHz 1 - 4 GHz 1 - 4 GHz Min. 9 20 5 Typ. 12 22 10 10 -9 +5 7 20 60 12 Max. 15 Units dB dB dB Deg. dBm dBm dB dB mA 75 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1-6 MICROWAVE CORPORATION Phase Compensated 2.5 to 5.0 GHz Variable Gain Amplifier HMC152 VARIABLE GAIN AMPLIFIER 2.5 - 5.0 GHz SEPTEMBER 1999 Gain vs Control Word 8 VOLTAGE GAIN (MAGNITUDE) GAIN AT 5.145 GHz Phase vs Control Word 10 5.145 GHz RELATIVE PHASE (DEG) 3.045 GHz 6 GAIN AT 3.945 GHz 0 3.945 GHz 1 Amplifiers GAIN AT 3.045 GHz 4 -10 2 -20 0 0246 8 10 12 14 16 18 20 22 24 26 28 30 32 CONTROL WORD -30 02 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 CONTROL WORD Voltage Gain (magnitude, not dB) is linearly related to the digital control word. Maximum gain is provided for control word 11111 (Decimal 31). Minimum gain is provided for control word 00000 (Decimal 0). Intermediate gain levels are provided for the intervening control words (Decimal 1 through 30) Gain vs Control Word 20 ABSOLUTE GAIN (dB) CONTROL WORD: 11111 10000 Relative Gain vs Control Word 10 CONTROL WORD: 11111 10 0 -10 -20 -30 -40 1 2 3 0 RELATIVE GAIN (dB) 01000 00100 00010 00001 00000 10000 01000 -10 -20 -30 -40 -50 00100 00010 00001 00000 4 5 6 1 2 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz) Relative Phase vs Control Word 20 RELATIVE PHASE (DEG) Return Loss 0 10 0 00100 RETURN LOSS (dB) CONTROL WORD: 10000 AND 01000 -10 OUTPUT (ALL STATES) -20 INPUT (ALL STATES) -10 00010 -20 PHASE RELATIVE TO CONTROL WORD 11111 -30 -30 1 2 3 4 5 6 FREQUENCY (GHz) -40 1 2 3 4 5 6 FREQUENCY (GHz) 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1-7 MICROWAVE CORPORATION HMC152 SEPTEMBER 1999 VARIABLE GAIN AMPLIFIER 2.5 - 5.0 GHz Schematic 1 Amplifiers RF IN (50 OHMS) VDD +5V Control Voltages State 1 0 RF OUT (50 OHMS) GROUND (BACKSIDE) Function Gain Enable Gain Disable Bias Condition +2.5V +/- 0.1V @ 1mA Max. -1V to -5V @ 1mA Max. A5 A4 A3 A2 A1(LSB) Absolute Maximum Ratings Supply Voltage Control Voltage Storage Temperature Operating Temperature +7.0 Vdc Max. +2.5 to -5.0 Vdc -65 to +150 deg C -55 to +125 deg C GAIN CONTROL WORD Outline 1.604 (0.0631) VDD 1.604 (0.0631) IN 3724 Hittite OUT ALL DIMENSIONS IN MILLIMETERS (INCHES) ALL TOLERANCES ARE 0.025 (0.001) DIE THICKNESS IS 0.100 (0.004), BACKSIDE IS GROUND BONDPADS ARE 0.100 (0.004) SQUARE, EQUALLY SPACED AT 0.150 (0.006) CENTERS BONDPAD METALLIZATION: GOLD BACKSIDE METALLIZATION: GOLD A5 A4 A3 A2 A1 (0.0050) (0.0050) 0.127 0.127 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1-8 MICROWAVE CORPORATION HANDLING, MOUNTING, BONDING GaAs MMIC DIE SEPTEMBER 1999 Handling Precautions Follow these precautions to avoid permanent damage: Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against >250V ESD strikes ( see page 8 - 2 ). Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 1 Amplifiers Mounting As indicated on each data sheet some chips are back-metallized and can be die mounted with AuSn eutectic preforms. All chips can be mounted with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding Ball or wedge bond with 1.0 diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package. RF bonds should be as short as possible. 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1-9 |
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