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2SK3766
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI)
2SK3766
Switching Regulator Applications
* * * * Low drain-source ON resistance: RDS (ON) = 1.9 (typ.) High forward transfer admittance: |Yfs| = 0.65 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement model: Vth = 3.5~4.5 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 450 450 30 2 5 30 103 2 3 150 -55~150 Unit V V V A W mJ A mJ C C 1: Gate 2: Drain 3: Source
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
- SC-67 2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2 Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 4.17 62.5 Unit C/W C/W 1
Note 1: Ensure that the channel temperature does not exceed 150C during use of the device. Note 2: VDD = 90 V, Tch = 25C (initial), L = 42.8 mH, RG = 25 , IAR = 2 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.
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2SK3766
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Gate-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr 10 V VGS 0V 50 ID = 1 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 450 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 1 A VDS = 10 V, ID = 1 A Min 30 450 3.5 0.18 Typ. 1.9 0.65 270 4 45 20 Max 10 100 4.5 2.45 pF Unit A V A V V S

VOUT

ns
Turn-on time Switching time Fall time
ton
RL = 200
30
tf Duty < 1%, tw = 10 s = VDD 200 V -
VDD 360 V, VGS = 10 V, ID = 2 A -
18

nC
Turn-off time Total gate charge Gate-source charge Gate-drain charge
toff Qg Qgs Qgd
60 8 4 4
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 2 A, VGS = 0 V IDR = 2 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 1000 5.0 Max 2 5 -1.5 Unit A A V ns C
Marking
K3766
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SK3766
ID - VDS
2
COMMON SOURCE T = 25 PULSE TEST
ID - VDS
5
15 10
COMMON SOURCE T = 25 PULSE TEST
10 8.5 8.0
DRAIN CURRENT ID (A)
15
DRAIN CURRENT ID (A)
1.6
4
9.5
9.0
1.2
7.5
3
8.5
0.8
7.0 6.5
2
8.0 7.5
0.4
V = 6.0V
1
7.0 V = 6.0V
0 0 2 4 6 8 DRAIN-SOURCE VOLTAGE VDS (V) 10
0 0 10 20 30 40 DRAIN-SOURCE VOLTAGE VDS (V) 50
ID - VGS
5
DRAIN-SOURCE VOLTAGE VDS (V)
COMMON SOURCE V = 20V PULSE TEST
VDS - VGS
10
COMMON SOURCE T = 25 PULSE TEST
DRAIN CURRENT ID (A)
4
8
3
6
2
100 25
4
I = 2.0A
1.0
1
T = -55
2
0.5
0 0 4 8 12 GATE-SOURCE VOLTAGE VGS (V) 16
0 0 4 8 12 16 GATE-SOURCE VOLTAGE VGS (V) 20
10.0
Yfs - ID
DRAIN-SOURCE ON RESISTANCE RDS (ON) ()
COMMON SOURCE V = 20V PULSE TEST
RDS (ON) - ID
30 COMMON SOURCE Tc = 25C PULSE TEST 10
FORWARD TRANSFER ADMITTANCE Yfs (S)
1.0
T = -55 25 100
5 3
VGS = 10, 15 V
1
0.1 0.1 1 10
0.5 0.1
0.3
0.5
1
3
5
10
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
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2SK3766
RDS (ON) - Tc
10
IDR - VDS
10
8
DRAIN REVERSE CURRENT IDR (A)
DRAIN-SOURCE ON RESISTANCE RDS (ON) ()
COMMON SOURCE VGS = 10 V PULSE TEST
COMMON SOURCE Tc = 25 PULSE TEST
1
6 ID = 2 A 4
1.0
0.5
0.1
10 5 3 1 V=0,-1V
2
0 -80
-40
0
40
80
120
160
0.01 0.0
-0.2
-0.4
-0.6
-0.8
-1.0
CASE TEMPERATURE
Tc
(C)
DRAIN-SOURCE VOLTAGE VDS (V)
1000
CAPACITANCE - VDS
6
Vth - Tc
Ciss
Vth (V)
COMMON SOURCE V = 10V
5
I = 1mA PULSE TEST
(pF)
100 Coss
GATE THRESHOLD VOLTAGE
4
CAPACITANCE C
3
10 COMMON SOURCE V = 0V f = 1MHz Tc = 25 1 0.1 1 10 100 Crss
2
1
0 -80 -40 0 40 80 120 160
DRAIN-SOURCE VOLTAGE VDS (V)
CASE TEMPERATURE
Tc
(C)
PD - Tc
50
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
500
20
(V)
V 90
PD (W)
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN POWER DISSIPATION
30
300
200 V=400V
12
20
200
V
8
COMMON SOURCE I = 2.0A Tc = 25 PULSE TEST
10
100
4
0 0
0
40 80 120 160 200
0
0 2 4 6 8 10 12
CASE TEMPERATURE
Tc
(C)
TOTAL GATE CHARGE Qg (nC)
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GATE-SOURCE VOLTAGE VGS
40
400
16
2SK3766
rth - tw
3
NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c)
1 Duty = 0.5 0.3
0.2 0.1
0.1 0.05 0.02 0.03 t 0.01 0.01 SINGLE PULSE T Duty = t/T Rth (ch-c) = 4.17C/W 0.003 10 100 1m 10 m 100 m 1 10 PDM
PULSE WIDTH tw
(S)
SAFE OPERATING AREA
10 200 ID max (PULSE) * 100 s * 3 ID max (CONTINUOUS) 1 ms *
EAS - Tch
AVALANCHE ENERGY EAS (mJ)
160
120
DRAIN CURRENT ID (A)
1
80
0.3
DC OPERATION Tc = 25C
40
0.1
0 25 * SINGLE NONPETITIVE PULSE
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)
Tch (C)
0.03
Tc = 25C Curves must be derated linearly with increase in temperature VDSS max
0.01 1
15 V
100 1000
BVDSS IAR VDD VDS
10
-15 V
DRAIN-SOURCE VOLTAGE VDS (V)
TEST CIRCUIT RG = 25 VDD = 90 V, L = 42.8 mH
WAVE FORM
AS =
1 B VDSS L I2 B 2 VDSS - VDD
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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