|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
2SK3373 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSV) 2SK3373 Switching Regulator and DC/DC Converter Applications Motor Drive Applications * * * * Low drain-source ON-resistance: RDS (ON) = 2.9 m (typ.) High forward transfer admittance: |Yfs| = 1.7 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 500 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC Drain current (Note 1) (Note 1) Pulse (t = 100 s) (Note 1) Drain power dissipation (Tc = 25C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP IDP PD EAS IAR EAR Tch Tstg Pulse (t = 1 ms) Rating 500 500 30 2 5 12 20 112 2 2 150 -55 to150 W mJ A mJ C C A Unit V V V JEDEC JEITA TOSHIBA 2-7J1B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 6.25 125 Unit C/W C/W Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 48.4 mH, RG = 25 , IAR = 2 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-06 2SK3373 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 2 A - Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton 10 V VGS 0V 50 ID = 1 A VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 1 A VDS = 10 V, ID = 1 A Min 30 500 2.0 0.8 VDD 200 V - Typ. 2.9 1.7 380 40 120 15 25 20 80 9 5 4 Max 10 100 4.0 3.2 ns nC pF Unit A V A V V S RL = 200 Duty < 1%, tw = 10 s = Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP IDRP VDSF trr Qrr t = 1 ms t = 100 s IDR = 2 A, VGS = 0 V IDR = 2 A, VGS = 0 V, dIDR/dt = 100 A/s Test Condition Min Typ. 1000 3.5 Max 2 5 12 -1.5 Unit A A V ns C Marking K3373 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-06 2SK3373 ID - VDS 2.0 Common source Tc = 25C pulse test 5 10 8 6 4 5.5 1.2 10 8 ID - VDS 7 6.5 Common source Tc = 25C pulse test 1.6 Drain current ID (A) Drain current ID (A) 3 6 2 5.5 1 VGS = 4 V 5 4.5 50 0.8 5 0.4 4.5 VGS = 4 V 0 0 2 4 6 8 10 0 0 10 20 30 40 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 5 Common source VDS = 20 V pulse test 10 VDS - VGS Common source Tc = 25C pulse test 4 VDS (V) 8 Drain current ID (A) 25 2 100 1 Tc = -55C Drain-source voltage 3 6 ID = 2 A 4 1 2 0.5 0 0 0 2 4 6 8 10 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID 10 RDS (ON) - ID 30 Common source Tc = 25C (S) Common source pulse test 25 Tc = -55C 100 1 Forward transfer admittance Yfs Drain-source ON-resistance RDS (ON) () 5 3 VDS = 20 V Pulse test 10 5 3 VGS = 10 V 0.5 0.3 0.2 0.1 0.3 0.5 1 3 5 10 1 0.5 0.1 0.3 0.5 1 3 5 10 Drain current ID (A) Drain current ID (A) 3 2006-11-06 2SK3373 RDS (ON) - Tc () 10 Common source VGS = 10 V pulse test 10 Common source Tc = 25C 3 pulse test IDR - VDS Drain-source ON-resistance RDS (ON) 8 Drain reverse current IDR (A) 1 6 ID = 2 A 0.5 1 0.3 10 0.1 3 0.03 1 4 2 VGS = 0, -1 V -0.6 -0.8 -1.0 -1.2 0 -80 -40 0 40 80 160 0.01 0 -0.2 -0.4 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 1000 Ciss 5 500 300 Vth - Tc Common source VDS = 10 V ID = 1 mA pulse test Vth (V) Gate threshold voltage 4 (pF) Capacitance C 100 50 30 Coss 3 2 10 Common source 5 VGS = 0 V f = 1 MHz Tc = 25C 2 0.1 0.3 0.5 1 Crss 1 3 5 10 30 50 100 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 2.0 500 Dynamic input/output characteristics Common source ID = 2 A Tc = 25C pulse test 200 100 300 VDD = 400 V 12 20 Drain power dissipation PD (W) VDS (V) 1.6 400 VDS 16 Drain-source voltage 0.8 200 8 0.4 100 VGS 4 0 0 40 80 120 160 200 0 0 4 8 12 16 0 20 Case temperature Tc (C) Total gate charge Qg (nC) 4 2006-11-06 Gate-source voltage 1.2 VGS (V) 2SK3373 rth - tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 3 1 Duty = 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 0.01 10 100 1m 10 m 100 m Single Pulse PDM t T Duty = t/T Rth (ch-c) = 6.25C/W 1 10 Pulse width tw (S) Safe operating area 30 ID max (pulsed) * 200 EAS - Tch Avalanche energy EAS (mJ) 10 ID max (pulsed) * 100 s * 1 ms * 160 Drain current ID (A) 3 I max (continuous) D 120 1 DC operation Tc = 25C 80 0.3 40 0.1 *: Single nonrepetitive pulse Tc = 25C 00.3 Curves must be derated linearly with increase in temperature. 00.1 10 1 0 25 50 75 100 125 150 Channel temperature (initial) Tch (C) VDSS max 100 1000 Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD VDS Waveform Test circuit RG = 25 VDD = 90 V, L = 48.4 mH AS = 1 B VDSS L I2 B 2 - VDD VDSS 5 2006-11-06 2SK3373 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-06 |
Price & Availability of 2SK337306 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |