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| STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESHTM IGBT Features Type VCES VCE(sat) (Max)@ 25C <2.5V IC @100C 40A STGW39NC60VD 600V Low CRES / CIES ratio (no cross conduction susceptibility) High frequency operation Very soft ultra fast recovery anti parallel diode TO-247 Applications High frequency inverters UPS Motor drivers Figure 1. Internal schematic diagram Induction heating Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "V" identifies a family optimized for high frequency. Table 1. Device summary Order code Marking GW39NC60VD Package TO-247 Packaging Tube STGW39NC60VD August 2007 Rev 6 1/14 www.st.com 14 Contents STGW39NC60VD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 Electrical characteristics (curves) ........................... 6 Frequency applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3 4 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STGW39NC60VD Electrical ratings 1 Electrical ratings Table 2. Symbol VCES IC(1) IC (1) ICL (2) VGE IF PTOT Tj Absolute maximum ratings Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) at 25C Collector current (continuous) at 100C Turn-off SOA minimum current Gate-emitter voltage Diode RMS forward current at Tc=25C Total dissipation at TC = 25C Operating junction temperature Value 600 70 40 220 20 30 250 - 55 to 150 Unit V A A A V A W C 1. Calculated according to the iterative formula: T -T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------CC R xV (T , I ) THJ - C CESAT ( MAX ) C C 2. Vclamp = 480V , Tj = 150C, RG = 10, VGE= 15V Table 3. Symbol Rthj-case Rthj-case Rthj-amb Thermal resistance Parameter Thermal resistance junction-case max (IGBT) Thermal resistance junction-case max (diode) Thermal resistance junction-ambient max Value 0.5 1.5 50 Unit C/W C/W C/W 3/14 Electrical characteristics STGW39NC60VD 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol VBR(CES) VCE(SAT) VGE(th) ICES IGES gfs Static Parameter Test conditions Min. 600 1.8 1.7 3.75 2.5 Typ. Max. Unit V V V V A mA nA S Collector-emitter breakdown IC = 1mA, VGE = 0 voltage Collector-emitter saturation voltage Gate threshold voltage Collector-emitter leakage current (VGE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VGE=15V, IC=30A,Tj=25C VGE=15V, IC=30A,Tj=125C VCE= VGE, IC= 250A VCE = Max rating,Tc=25C VCE= Max rating, Tc=125C VGE = 20V , VCE = 0 VCE = 15V, IC= 30A 5.75 500 5 100 20 Table 5. Symbol Cies Coes Cres Qg Qge Qgc Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions Min. Typ. 2900 298 59 126 16 46 Max Unit pF pF pF nC nC nC VCE = 25V, f = 1 MHz, VGE= 0 VCE = 390V, IC = 30A, VGE = 15V, (see Figure 19) 4/14 STGW39NC60VD Electrical characteristics Table 6. Symbol td(on) tr (di/dt)onf td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC=390 V, IC= 30A, RG=10, VGE=15V Tj=25C (see Figure 18) VCC=390 V, IC= 30A, RG=10, VGE=15V Tj=125C (see Figure 18) VCC=390 V, IC= 30A, RG=10, VGE=15V Tj=25C (see Figure 18) VCC=390 V, IC= 30A, RG=10, VGE=15V Tj=125C (see Figure 18) Min. Typ. 33 13 2500 32 14 2280 33 178 65 68 238 128 Max. Unit ns ns A/s ns ns A/s ns ns ns ns ns ns Table 7. Symbol Eon Eoff(2) Ets (1) Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390V, IC = 30A , RG= 10 VGE= 15V, Tj= 25C (see Figure 20) VCC = 390V, IC = 30A RG= 10 VGE= 15V, , Tj= 125C (see Figure 20) Min Typ. 333 537 870 618 1125 1743 Max Unit J J J J J J Eon (1) Eoff (2) Ets 1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C) 2. Turn-off losses include also the tail of the collector current Table 8. Symbol Collector-emitter diode Parameter Test conditions If = 15A If = 15A, Tj = 125C If = 30A, Tj = 125C If = 30A, VR = 50V, Tj = 25C, di/dt =100A/s (see Figure 21) If = 30A, VR = 50V, Tj = 125C,di/dt =100A/s (see Figure 21) Min Typ. 1.3 1.1 1.2 45 56 2.55 100 290 5.8 Max 2.9 Unit V V V ns nC A ns nC A Vf trr Qrr Irrm trr Qrr Irrm Forward on-voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current 5/14 Electrical characteristics STGW39NC60VD 2.1 Figure 2. Electrical characteristics (curves) Output characteristics Figure 3. Transfer characteristics Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs temperature Figure 6. Collector-emitter on voltage vs collector current Figure 7. Normalized gate threshold vs temperature 6/14 STGW39NC60VD Figure 8. Normalized breakdown voltage vs temperature Figure 9. Electrical characteristics Gate charge vs gate-emitter voltage Figure 10. Capacitance variations Figure 11. Switching losses vs temperature Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current 7/14 Electrical characteristics Figure 14. Thermal impedance Figure 15. Turn-off SOA STGW39NC60VD Figure 16. Emitter-collector diode characteristics Figure 17. IC vs. frequency 8/14 STGW39NC60VD Electrical characteristics 2.2 Frequency applications For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is reported. That frequency is defined as follows: fMAX = (PD - PC) / (EON + EOFF) The maximum power dissipation is limited by maximum junction to case thermal resistance: Equation 1 PD = T / RTHJ-C considering T = TJ - TC = 125 C- 75 C = 50C The conduction losses are: Equation 2 PC = IC * VCE(SAT) * with 50% of duty cycle, VCESAT typical value @125C. Power dissipation during ON & OFF commutations is due to the switching frequency: Equation 3 PSW = (EON + EOFF) * freq. Typical values @ 125C for switching losses are used (test conditions: VCE = 390V, VGE = 15V, RG = 10 Ohm). Furthermore, diode recovery energy is included in the EON (see note 2), while the tail of the collector current is included in the EOFF measurements (see note 3). 9/14 Test circuit STGW39NC60VD 3 Test circuit Figure 19. Gate charge test circuit Figure 18. Test circuit for inductive load switching Figure 20. Switching waveforms Figure 21. Diode recovery times waveform 10/14 STGW39NC60VD Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/14 Package mechanical data STGW39NC60VD TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 12/14 STGW39NC60VD Revision history 5 Revision history Table 9. Date 17-Nov-2005 05-May-2006 10-Jul-2006 01-Dec-2006 16-May-2007 22-Aug-2007 Document revision history Revision 1 2 3 4 5 6 First release Inserted curves Modified value on Absolute maximum ratings Modified value on Dynamic New curves updated:Figure 5 and Figure 6 Added new Figure 17 and new section 2.2: Frequency applications Changes 13/14 STGW39NC60VD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 |
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