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| QS5U34 Transistors 1.8V Drive Nch+SBD MOSFET QS5U34 Structure Silicon N-channel MOSFET Schottky Barrier DIODE Dimensions (Unit : mm) TSMT5 1.0MAX 2.9 1.9 0.95 0.95 0.85 0.7 Features 1) The QS5U34 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive (1.8V). 4) The Independently connected Schottky barrier diode has low forward voltage. (5) (4) 1.6 2.8 0~0.1 (1) (2) (3) 0.4 0.16 Each lead has same dimensions Abbreviated symbol : U34 Applications Load switch, DC / DC conversion Packaging specifications Package Type QS5U34 Code Basic ordering unit (pieces) Taping TR 3000 Equivalent circuit (5) (4) 2 1 (1) (2) 1 ESD protection diode 2 Body diode (3) (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain 0.3~0.6 1/4 QS5U34 Transistors Absolute maximum ratings (Ta=25C) 2 3 PD 3 Tstg 1 Pw10s, Duty cycle1% 2 60Hz*1cyc. 3 Mounted on a ceramic board Electrical characteristics (Ta=25C) Pulsed RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Min. - 20 - 0.3 - - - 1.6 - - - - - - - - - - Typ. - - - - 130 170 220 - 110 18 15 5 5 20 3 1.8 0.3 0.3 Max. 10 - 1 1.3 180 240 310 - - - - - - - - 2.5 - - Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=10V / VDS=0V ID=1mA, / VGS=0V VDS=20V / VGS=0V VDS=10V / ID=1mA ID=1.5A, VGS=4.5V ID=1.5A, VGS=2.5V ID=0.8A, VGS=1.8V VDS=10V, ID=1.5A VDS=10V VGS=0V f=1MHz ID=1.0A VDD 10V VGS=4.5V RL=10 RG=10 VDD 10V VGS=4.5V ID=1.5A - - 1.2 V IS=0.6A / VGS=0V 2/4 QS5U34 Transistors Electrical characteristic curves 1000 Ta=25C f=1MHz VGS=0V 1000 100 tf GATE-SOURCE VOLTAGE : VGS (V) SWITCHING TIME : t (ns) CAPACITANCE : C (pF) Ta=25C VDD=10V VGS=4.5V RG=10 Pulsed 5 Ta=25C VDD=10V ID=1.5A 4 RG=10 Pulsed 3 100 Ciss td(off) 2 10 td(on) 1 tr Coss Crss 10 0.01 0.1 1 10 100 1 0.01 0.1 1 10 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.1 Typical Capacitance vs. Drain-Source Voltage Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (m) VDS=10V Pulsed Ta=125C 75C 500 450 400 350 300 250 200 150 100 50 0 0 1 2 3 4 5 6 7 8 9 10 ID=0.8A ID=1.5A Ta=25C Pulsed 10 VGS=0V Pulsed Ta=125C DRAIN CURRENT : ID (A) 1 SOURCE CURRENT : IS (A) 0.1 25C -25C 1 75C 25C -25C 0.01 0.1 0.001 0.0001 0.0 0.5 1.0 1.5 2.0 0.01 0.0 0.5 1.0 1.5 GATE-SOURCE VOLTAGE : VGS (V) GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate-source Voltage Fig.6 Source Current vs. Source-Drain Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) Ta=125C 75C 25C -25C Ta=125C 75C 25C -25C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) 1000 VGS=1.8V Pulsed 1000 VGS=2.5V Pulsed 1000 Ta=125C 75C 25C -25C VGS=4.5V Pulsed 100 100 100 10 0.01 0.1 1 10 10 0.01 0.1 1 10 10 0.01 0.1 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ) 3/4 QS5U34 Transistors 1000 100 Forward Current : IF [mA] 100 Reverse Current : IR[mA] Ta=125 C 75 C 25 C -25 C 10 1 125C 75C 10 0.1 25C 0.01 1 0.001 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 Forward Voltage :VF [V] 0.0001 0 10 20 -25C 30 40 Reverse Voltage : VR[V] Fig.10 Forward Temperature Characteristics Fig.11 Reverse Temperature Characteristics Notice 1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright (c) 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0 |
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