NTE344 Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz
Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Operating Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +175C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3C/W
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cutoff Current DC Current Gain Amplifier Power Out Collector Efficiency Symbol Test Conditions Min 35 4 17 - - 10 28 60 Typ - - - - - 50 32 70 Max - - - 2 1 180 - - Units V V V mA mA - W % V(BR)CBO IC = 10mA, IE = 0 V(BR)EBO IE = 10mA, IC = 0 V(BR)CEO IC = 100mA, RBE = ICBO IEBO hFE PO C VCB = 25V, IE = 0 VEB = 3V, IC = 0 VCE = 10V, IC = 0.2A VCC 13.5V, f = 175MHz, Pin = 6W VCC = 13.5V, f = 175MHz, Pin = 6W
.300 (7.62) Min .157 (4.0)
0.39 (1.0) R C E
.276 (7.0) Max E .063 (1.6) R .100 (2.79) 6.46 (16.4) Max .709 (18.0) .205 (5.2) Max .276 (7.0) Max B
.551 (14.0)
.118 (3.0) .076 (1.93) .866 (22.0)
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