View IRFBA90N20DPBF_4122708.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 95902
SMPS MOSFET
IRFBA90N20DPBF
HEXFET(R) Power MOSFET
Applications High frequency DC-DC converters l Lead-Free
l
VDSS
200V
RDS(on) max
0.023
ID
98A
Benefits
l l
l
Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current
Super-220TM
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Recommended Clip Force
Max.
98 71 390 650 4.3 30 6.3 -55 to + 175 300 (1.6mm from case ) 20
Units
A W W/C V V/ns C N
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
0.23 --- 58
Units
C/W
Notes
through
are on page 8 09/15/04
www.irf.com
1
IRFBA90N20DPBF
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 --- --- 3.0 --- --- --- --- Typ. --- 0.22 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.023 VGS = 10V, ID = 59A 5.0 V VDS = VGS, ID = 250A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 41 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 160 45 75 23 160 39 77 6080 1040 150 7500 410 790 Max. Units Conditions --- S VDS = 50V, ID = 59A 240 ID = 59A 67 nC VDS = 160V 110 VGS = 10V --- VDD = 100V --- ID = 59A ns --- RG = 1.2 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 160V, = 1.0MHz --- VGS = 0V, VDS = 0V to 160V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
960 59 65
Units
mJ A mJ
Diode Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 98 --- --- showing the A G integral reverse --- --- 390 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 59A, VGS = 0V --- 220 340 nS TJ = 25C, IF = 59A --- 1.9 2.8 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRFBA90N20DPBF
1000
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
1000
100
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
10
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
1
5.0V
10
5.0V
0.1
20s PULSE WIDTH Tj = 25C
0.01 0.1 1 10 100 1 0.1 1
20s PULSE WIDTH Tj = 175C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
3.5
I D = 98A
ID, Drain-to-Source Current ()
T J = 175C
RDS(on) , Drain-to-Source On Resistance
3.0
100.00
2.5
(Normalized)
2.0
10.00
T J = 25C
1.00
1.5
1.0
0.10 5.0 7.0 9.0
VDS = 15V 20s PULSE WIDTH
11.0 13.0 15.0
0.5
V GS = 10V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature
( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRFBA90N20DPBF
100000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds
12.0 ID= 59A
VGS, Gate-to-Source Voltage (V)
10.0
10000
C, Capacitance(pF)
Ciss Coss
VDS= 160V VDS= 100V VDS= 40V
8.0 6.0
1000
Crss
100
4.0
2.0
10 1 10 100 1000
0.0 0 20 40 60 80 100 120 140 160 180 200 QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000.00
10000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100.00
T J = 175C
10.00
T J = 25C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100 100sec 10 1msec
1.00 VGS = 0V 0.10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VSD, Source-toDrain Voltage (V)
1
Tc = 25C Tj = 175C Single Pulse 1 10 100
10msec
0.1 1000 VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRFBA90N20DPBF
100
LIMITED BY PACKAGE
V DS VGS
RD
80
RG 10V
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
-VDD
I D , Drain Current (A)
60
40
Fig 10a. Switching Time Test Circuit
20
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1
(Z thJC )
D = 0.50 0.1 0.20
Thermal Response
0.10 0.05 0.01 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.001 0.00001 0.0001 0.001 0.01 t1 / t 2 +TC 1
J = P DM x Z thJC
0.1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRFBA90N20DPBF
15V
2000
ID TOP 24A 42A 59A
VDS
L
DRIVER
1600
BOTTOM
RG
20V
D.U.T
IAS tp
+ V - DD
EAS , Single Pulse Avalanche Energy (mJ)
1200
A
0.01
800
Fig 12a. Unclamped Inductive Test Circuit
400
V(BR)DSS tp
0 25 50 75 100 125 150 175
Starting T , J Junction Temperature
( C)
I AS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K 12V .2F .3F
10 V
QGS VG QGD
D.U.T. VGS
3mA
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
IRFBA90N20DPBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
www.irf.com
7
IRFBA90N20DPBF
Super-220 ( TO-273AA ) Package Outline
A 11.00 [.433] 10.00 [.394] 5.00 [.196] 4.00 [.158] B 9.00 [. 8.00 [. 0.25 [
1.50 [.059] 0.50 [.020]
4
15.00 [.590] 14.00 [.552]
13.50 [. 12.50 [.
1
2
3
4.00 [.157] 3.50 [.138]
14.50 [.570] 13.00 [.512]
3X 2.55 [.100] 2X
1.30 [.051] 0.90 [.036] BA
4X
1.00 [.039] 0.70 [.028] 3.00 [.118] 2.50 [.099]
0.25 [.010]
MOSFET
IGBT
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25C, L = 0.55mH
R G = 25, IAS = 59A.
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
ISD 59A, di/dt 170A/s, VDD V(BR)DSS,
TJ 175C
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 95A.
8
www.irf.com
IRFBA90N20DPBF
Super-220 (TO-273AA) Part Marking Information
EXAMPLE: THIS IS AN IRFBA22N50A WITH ASSEMBLY LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" PART NUMBER INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE
IRFBA22N50A 719C 17 89
DATE CODE YEAR 7 = 1997 WEEK 19 LINE C
Note: "P" in assembly line position indicates "Lead-Free"
TOP
Super-220 not recommended for surface mount application.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04
www.irf.com
9

▲Up To Search▲

Price & Availability of IRFBA90N20DPBF

	To Download IRFBA90N20DPBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .