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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HA200201 Issued Date : 2002.01.01 Revised Date : 2005.02.14 Page No. : 1/4 HSB647A SILICON PNP EPITAXIAL Description Low Frequency Power Amplifier Complementary Pair With HSD667A. Absolute Maximum Ratings TO-92 * Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 C Junction Temperature ..................................................................................................................... 150 C Maximum * Maximum Power Dissipation Total Power Dissipation (TA=25C) ............................................................................................................... 900 mW * Maximum Voltages and Currents (TA=25C) VCBO Collector to Base Voltage ........................................................................................................................ -120 V VCEO Collector to Emitter Voltage ..................................................................................................................... -100 V VEBO Emitter to Base Voltage ............................................................................................................................... -5 V IC Collector Current (DC) ..................................................................................................................................... -1 A ICP Collector Current (Peak) ................................................................................................................................. -2 A Electrical Characteristics (TA=25C) Symbol BVCBO BVCEO BVEBO ICBO *VCE(sat) VBE(on) *hFE1 *hFE2 fT Cob Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Collector to Emitter Saturation Voltage Base to Emitter Voltage DC Current Transfer Ratio 1 DC Current Transfer Ratio 2 Gain Bandwidth Product Collector Output Capacitance Min. Typ. Max. Unit -120 -100 -5 60 30 140 20 -10 -1 -1.5 200 pF V V V uA V V Test Conditions IC=-100uA, IE=0 IC=-1mA, RBE= IE=-10uA, IC=0 VCB=-100V, IE=0 IC=-500mA, IB=-50mA VCE=-5V, IC=-150mA VCE=-5V, IC=-150mA VCE=-5V, IC=-500mA MHz VCE=-5V, IC=-150mA VCB=-10V, f=1MHz, IE=0 *Pulse Test: Pulse Width 380us, Duty Cycle2% Classification of hFE1 Rank Range B 60-120 C 100-200 HSB647A HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 hFE @ VCE=5V 10000 VCE(sat) @ IC=10IB Spec. No. : HA200201 Issued Date : 2002.01.01 Revised Date : 2005.02.14 Page No. : 2/4 Saturation Voltage & Collector Current 125 C Saturation Volltage (mV) o 1000 hFE 100 25 C 75 C o o 100 125 C o 25 C o 75 C o 10 1 10 100 1000 10 1 10 100 1000 Collector Current-IC (mA) Collector Current-IC (mA) ON Voltage & Collector Current 1000 75 C 125 C o o Cutoff Frequency & Collector Current 1000 25 C o Cutoff Frequency (MHZ).. . ON Voltage (mV) fT @ VCE=5V VBE(on) @ VCE=5V 100 1 10 100 1000 100 0.1 1 10 100 Collector Current-IC (mA) Collector Current-IC (mA) Capacitance & Reverse-Biased Voltage 100 Power Derating 1000 900 Power Dissipation-PD (mW) 800 700 600 500 400 300 200 100 Capacitance (pF) Cob 10 1 0.1 1 10 100 0 0 20 40 60 80 100 o 120 140 160 Reverse Biased Voltage (V) Ambient Temperature-Ta ( C) HSB647A HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension A B 1 2 3 Spec. No. : HA200201 Issued Date : 2002.01.01 Revised Date : 2005.02.14 Page No. : 3/4 2 Marking: Pb Free Mark Pb-Free: " . " (Note) Normal: None H SB 647A Control Code 3 Date Code Note: Green label is used for pb-free packing C D Pin Style: 1.Emitter 2.Collector 3.Base Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A B C D E F G H I 1 2 3 Min. 4.33 4.33 12.70 0.36 3.36 0.36 - Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27 *5 *2 *2 H I E F G *: Typical, Unit: mm 1 3-Lead TO-92 Plastic Package HSMC Package Code: A TO-92 Taping Dimension DIM A D D1 D2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 1 1 27 21 11 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00 Unit: mm H2 H2 H2A H2A D2 A H3 H4 H L L1 H1 F1F2 T2 T T1 P1 P P2 D1 D W1 W Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSB647A HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : HA200201 Issued Date : 2002.01.01 Revised Date : 2005.02.14 Page No. : 4/4 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly <3 C/sec 100oC 150oC 60~120 sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes o o o Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 sec <3oC/sec 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes Peak temperature 245 C 5 C o o Dipping time 5sec 1sec 5sec 1sec 260 C +0/-5 C o o HSB647A HSMC Product Specification |
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