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| FLM1314-12F X, Ku-Band Internally Matched FET FEATURES * * * * * * * High Output Power: P1dB = 41.0dBm (Typ.) High Gain: G1dB = 6.0dB (Typ.) High PAE: add = 23% (Typ.) Low IM3 = -45dBc@Po = 29.0dBm Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed DESCRIPTION The FLM1314-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25C Condition Rating 15 -5 75 -65 to +175 175 Unit V V W C C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 48.0 and -6.6 mA respectively with gate resistance of 50. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IB Symbol IDSS gm Vp VGSO P1dB G1dB Idsr add G IM3 Rth Tch f = 14.5GHz, f = 10 MHz 2-Tone Test Pout = 29.0dBm S.C.L. Channel to Case 10V x Idsr x Rth VDS =10V, IDS = 0.65 IDSS (Typ.), f = 13.75 ~ 14.5 GHz, ZS = ZL= 50 ohm Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 4200mA VDS = 5V, IDS = 335mA IGS = -335A Min. -0.5 -5.0 40.5 5.0 -42 Limit Typ. Max. 6.7 6700 -1.5 41.0 6.0 10 -3.0 Unit A mS V V dBm dB mA % dB dBc C/W C 4200 5000 23 -45 1.8 0.6 2.0 80 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level Edition 1.1 August 2004 1 FLM1314-12F X, Ku-Band Internally Matched FET POWER DERATING CURVE OUTPUT POWER & IM3 vs. INPUT POWER VDS=10V f1 = 14.5 GHz f2 = 14.51 GHz 2-tone test Total Power Dissipation (W) Output Power (S.C.L.) (dBc) 80 60 40 20 34 32 -20 Pout 30 28 26 IM3 -30 -40 -50 0 50 100 150 200 21 23 25 27 Case Temperature (C) Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. FREQUENCY 42 VDS = 10V P1dB OUTPUT POWER vs. INPUT POWER VDS = 10V f = 14.125GHz Pout 43 Output Power (dBm) Pin = 36dBm 40 Output Power (dBm) 38 36 34 32 41 39 35dBm 32dBm IM3 (dBc) 20 10 add (%) 30 37 35 29dBm add 30 13.7 13.9 14.1 14.3 14.5 26 28 30 32 34 36 Frequency (GHz) Input Power (dBm) 2 FLM1314-12F X, Ku-Band Internally Matched FET +j50 +j100 +j25 S11 S22 +90 S21 S12 +j10 0 10 13.55 GHz 13.7 13.55 GHz 13.7 13.9 13.9 14.1 14.3 25 14.5 14.1 14.7 14.3 14.7 +j250 14.3 14.1 14.5 14.3 14.1 14.7 14.5 14.7 180 1 13.9 2 3 4 0 SCALE FOR |S21| SCALE FOR |S12| 13.9 -j10 14.5 -j250 13.7 13.7 13.55 GHz 13.55 GHz .01 -j25 -j50 -j100 .02 -90 FREQUENCY (MHZ) 13550 13600 13650 13700 13750 13800 13850 13900 13950 14000 14050 14100 14150 14200 14250 14300 14350 14400 14450 14500 14550 14600 14650 14700 S11 MAG .387 .367 .357 .341 .324 .303 .288 .272 .256 .246 .240 .237 .235 .243 .259 .273 .292 .314 .338 .359 .388 .409 .434 .452 ANG 96.2 89.7 82.3 75.0 67.7 59.2 48.2 40.2 28.7 17.3 4.3 -9.2 -23.8 -36.3 -50.2 -61.8 -72.9 -81.9 -92.0 -100.9 -109.3 -115.6 -123.5 -130.6 S-PARAMETERS VDS = 10V, IDS = 4200mA S21 S12 MAG ANG MAG ANG 2.086 2.102 2.115 2.140 2.156 2.166 2.182 2.196 2.205 2.223 2.230 2.231 2.232 2.219 2.208 2.202 2.182 2.169 2.142 2.115 2.084 2.059 2.016 1.976 -121.7 -127.2 -133.0 -139.6 -145.5 -151.2 -158.2 -164.3 -170.4 -176.4 176.3 170.0 163.7 157.3 149.8 143.2 136.9 130.4 122.6 116.1 109.7 103.4 95.8 89.4 .094 .092 .095 .097 .097 .098 .099 .099 .101 .098 .098 .099 .101 .100 .098 .097 .095 .097 .093 .090 .087 .087 .084 .080 -124.2 -126.1 -131.6 -138.8 -143.4 -148.7 -155.5 -159.9 -165.1 -172.4 -177.7 176.0 170.9 165.0 157.1 152.4 147.0 138.8 132.8 127.8 120.4 114.5 106.5 100.8 S22 MAG .368 .356 .348 .331 .330 .322 .310 .301 .286 .273 .269 .259 .251 .243 .233 .219 .207 .196 .181 .164 .154 .140 .127 .116 ANG 112.4 107.2 102.0 95.0 89.5 82.9 75.4 68.6 60.9 53.6 45.0 38.1 28.6 21.7 14.9 5.2 0.0 -8.8 -19.3 -25.3 -35.8 -45.6 -59.8 -71.4 3 FLM1314-12F X, Ku-Band Internally Matched FET Case Style "IB" Metal-Ceramic Hermetic Package 2.0 Min. (0.079) 2-R 1.60.15 (0.063) 1 2 0.1 (0.004) 3 0.6 (0.024) 2.0 Min. (0.079) 2.60.15 (0.102) 5.2 Max. (0.205) 10.7 (0.421) 0.2 Max. (0.008) 1.45 (0.059) 12.90.2 (0.508) 12.0 (0.422) 17.00.15 (0.669) 21.00.15 (0.827) 1. Gate 2. Source (Flange) 3. Drain Unit: mm(inches) For further information please contact: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com * Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. (c) 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4 |
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