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2N3811 Silicon PNP Transistor Data Sheet Description Semicoa Semiconductors offers: * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N3811J) * JANTX level (2N3811JX) * JANTXV level (2N3811JV) * JANS level (2N3811JS) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS * Radiation testing (total dose) upon request Applications * General purpose * Matched Dual transistors * PNP silicon transistor Features * * * * Hermetically sealed TO-78 metal can Also available in chip configuration Chip geometry 0220 Reference document: MIL-PRF-19500/336 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25C Derate linearly above 25C Operating Junction Temperature Storage Temperature TJ TSTG Symbol VCEO VCBO VEBO IC PT * Qualification Levels: JAN, JANTX, JANTXV and JANS * Radiation testing available TC = 25C unless otherwise specified Rating 60 60 5 50 300 one section 600 both sections 1.71 one section 3.43 both sections -65 to +200 -65 to +200 Unit Volts Volts Volts mA mW mW/C C C Copyright 2002 Rev. G Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 1 www.SEMICOA.com 2N3811 Silicon PNP Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 hFE3-1/hFE3-2 Base-Emitter Voltage VBE |VBE1-VBE2|1 |VBE1-VBE2|2 |VBE1-VBE2|3 VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 1 A, VCE = 5 Volts IC = 10 A, VCE = 5 Volts IC = 100 A, VCE = 5 Volts IC = 1 mA, VCE = 5 Volts IC = 10 mA, VCE = 5 Volts IC = 100 A, VCE = 5 Volts TA = -55C IC = 100 A, VCE = 5 Volts VCE = 5 Volts, IC = 100 A VCE = 5 Volts, IC = 10 A VCE = 5 Volts, IC = 100 A VCE = 5 Volts, IC = 10 mA IC = 100 A, IB = 10 A IC = 1 mA, IB = 100 A IC = 100 A, IB = 10 A IC = 1 mA, IB = 100 A Symbol V(BR)CEO ICBO1 ICBO2 ICBO3 IEBO1 IEBO2 Test Conditions IC = 100 A VCB = 60 Volts VCB = 50 Volts VCB = 50 Volts, TA = 150C VEB = 5 Volts VEB = 4 Volts Min 60 10 10 10 10 10 Typ Max Units Volts A nA A A nA Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Min 75 225 300 300 250 100 0.9 Typ Max Units DC Current Gain 900 900 1.0 0.7 5 3 5 0.7 0.8 0.20 0.25 Volts mVolts mVolts mVolts Volts Volts Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Copyright 2002 Rev. G Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com 2N3811 Silicon PNP Transistor Data Sheet Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance Symbol |hFE1| |hFE2| hFE COBO CIBO Test Conditions VCE = 5 Volts, IC = 500 A, f = 30 MHz VCE = 5 Volts, IC = 1 mA, f = 100 MHz VCE = 10 Volts, IC = 1 mA, f = 1 kHz VCB = 5 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz VCE = 10 Volts, IC = 100 A, Rg = 3 k f = 100 Hz f = 1 kHz f = 10 kHz VCE = 10 Volts, IC = 100 A, Rg = 3 k 10 Hz < f < 15.7 kHz VCB =10V, IC =1mA, f =1kHz VCB =10V, IC =1mA, f =1kHz VCB =10V, IC=100A, f=1kHz Min 1 1 300 5 900 5 8 pF pF Typ Max Units Noise Figure NF1 NF2 NF3 NF hie hoe hre 4 1.5 2 2.5 3 5 40 60 25x10 -4 dB Noise Figure (wideband) Short Circuit Input Impedance Open Circuit Output Admittance Open Circuit reverse Voltage Transfer Ratio dB k Copyright 2002 Rev. G Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 3 of 3 www.SEMICOA.com |
Price & Availability of 2N381102
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