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| 2N2905A Silicon PNP Transistor Data Sheet Description Semicoa Semiconductors offers: * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N2905AJ) * JANTX level (2N2905AJX) * JANTXV level (2N2905AJV) * JANS level (2N2905AJS) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS * Radiation testing (total dose) upon request Applications * General purpose * Low power * PNP silicon transistor Features * * * * Hermetically sealed TO-39 metal can Also available in chip configuration Chip geometry 0600 Reference document: MIL-PRF-19500/290 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 * Qualification Levels: JAN, JANTX, JANTXV and JANS * Radiation testing available TC = 25C unless otherwise specified Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25 C Derate above 60 C Power Dissipation, TC = 25 C Derate above 25 C Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT Rating 60 60 5 600 0.8 5.7 3.0 17.2 175 -65 to +200 -65 to +200 Unit Volts Volts Volts mA W mW/C W mW/C C/W C C RJA TJ TSTG Copyright 2002 Rev. H Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 1 www.SEMICOA.com 2N2905A Silicon PNP Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Base Cutoff Current Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 VBEsat1 VBEsat2 VCEsat1 VCEsat2 Symbol |hFE| hFE COBO CIBO ton toff Test Conditions IC = 0.1 mA, VCE = 10 Volts IC = 1.0 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts IC = 500 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts TA = -55OC IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Test Conditions VCE = 20 Volts, IC = 50 mA, f = 100 MHz VCE = 10 Volts, IC = 1 mA, f = 1 kHz VCB = 10 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz VEB = 2.0 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz Symbol V(BR)CEO ICBO1 ICBO2 ICBO3 ICES IEBO1 IEBO2 Test Conditions IC = 10 mA VCB = 60 Volts VCB = 50 Volts VCB = 50 Volts, TA = 150OC VCE = 60 Volts VEB = 5 Volts VEB = 3.5 Volts Min 60 10 10 10 1 10 50 Typ Max Units Volts A nA A A A nA Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% DC Current Gain Min 75 100 100 100 50 50 Typ Max 450 300 Units Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance Switching Characteristics Saturated Turn-On Time Saturated Turn-Off Time 1.3 2.6 0.4 1.6 Volts Volts Min 2.0 100 Typ Max Units 8 30 pF pF 45 300 ns ns Copyright 2002 Rev. H Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com |
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