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| SUR6020 Ultra Fast Recovery Epitaxial Diodes Dimensions TO-247AC A C(TAB) C A C Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 A=Anode, C=Cathode, TAB=Cathode VRSM V 200 VRRM V 200 SUR6020 Symbol IFRMS IFAVM IFRM Test Conditions TVJ=TVJM TC=85oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine Maximum Ratings 98 60 800 600 650 540 580 1800 1770 1460 1410 -40...+150 150 -40...+150 Unit A IFSM TVJ=150oC TVJ=45oC A I2t TVJ=150oC A2s TVJ TVJM Tstg Ptot Md Weight TC=25oC Mounting torque o C 150 0.8...1.2 6 W Nm g SUR6020 Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=60A; TVJ=150oC TVJ=25oC For power-loss calculations only TVJ=TVJM Characteristic Values typ. max. 50 40 11 0.88 1.08 0.70 4.0 0.75 0.25 35 Unit uA uA mA V V m K/W IR VF VTO rT RthJC RthCK RthJA trr IRM IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC _ VR=100V; IF=60A; -diF/dt=200A/us; L<0.05uH; TVJ=100 C o 35 8 50 10 ns A FEATURES * International standard package JEDEC TO-247AC * Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling SUR6020 Ultra Fast Recovery Epitaxial Diodes 160 A 140 Qr IF 120 100 80 60 40 20 0 0.0 0.4 0.8 VF 0.4 0.8 C 0.6 T V J = 100C V R = 100V IR M 30 A 25 T V J = 100C V R = 100V I F = 35A I F = 70A I F =140A 20 15 10 T V J =150C T V J =100C 0.2 5 I F = 35A I F = 70A I F =140A T V J =25C 1.2 V 0.0 10 100 A/ s 1000 -diF /dt 0 0 200 400 600 A/ s 1000 800 -diF /dt F ig. 1 F orward current I F vers us V F F ig. 2 T yp. revers e recovery charge Q r vers us -diF /dt 70 ns 60 trr 50 40 F ig. 3 T yp. peak revers e current I R M vers us -diF /dt 5 V VFR 4 1.6 1.4 Kf 1.2 1.0 0.8 0.6 0.4 0.2 T V J = 100C V R = 100V T V J = 100C I F = 100A 2.5 s 2.0 tfr tfr 3 V FR 1.5 IR M 30 20 I F =35A I F =70A I F =140A 2 1.0 Qr 1 10 0 0 0.5 0 40 80 120 C 160 T VJ 0 200 400 600 A/ s 800 -diF /dt 1000 0 200 400 600 diF /dt 0.0 A/ s 800 F ig. 4 Dynamic parameters Q r, I R M vers us T VJ 1.0 K /W 0.8 Z thJ C 0.6 F ig. 5 T yp. recovery time trr vers us -diF /dt F ig. 6 T yp peak forward voltage V F R and tfr vers us diF /dt 0.4 0.2 0.0 0.001 DS E I 60-02 0.01 0.1 1 s t 10 F ig. 7 T rans ient thermal impedance junction to cas e |
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