![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
2SJ314-01L,S P-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof FUJI POWER MOSFET FAP-III SERIES K-Pack(S) Outline Drawings K-Pack(L) Applications Switching regulators DC-DC converters General purpose power amplifier L-type EIAJ Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Drain-gate voltage (RGS=20k) Continuous drain current Pulsed drain current Gate-source voltage Max. power dissipation Operating and storage temperature range Symbol VDS VDGR ID ID(puls] VGS PD Tch Tstg Rating -60 -60 -5 -20 20 20 +150 -55 to +150 Unit V A A A V W C C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton (ton=td(on)+tr) Turn-off time toff (toff=td(off)+tf) Avalanche capability Continuous reverse drain current Pulsed reverse drain current Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV IDR IDRM VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS= -60V VGS=0V VGS=20V VDS=0V ID= -2.5A ID=2.5A VDS= -25V VDS= -25V VGS=0V f=1MHz VCC= -30V RG=25 ID= -3A VGS= -10V L=100H Tc=25C Tc=25C Tch=25C Min. -60 -1.0 Tch=25C Tch=125C VGS= -4V VGS= -10V 2.0 Typ. -1.5 -10 -0.2 10 280 200 4.5 500 200 120 15 20 100 80 Max. -2.5 -500 -1.0 100 480 300 750 300 180 23 30 150 120 -5 -20 Units V V A mA nA m m S pF ns -5 IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C -4.0 80 0.18 A A A V ns C Thermal characteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Min. Typ. Max. 6.25 125.0 Units C/W C/W 1 FUJI POWER MOSFET Characteristics 2SJ314-01L,S 2 FUJI POWER MOSFET 2SJ314-01L,S 3 |
Price & Availability of 2SJ314-01L
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |