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Power Transistors
2SC5392
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
M Di ain sc te on na tin nc ue e/ d
9.90.3
s Features
q q q q q
4.60.2 2.90.2
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Dielectric breakdown voltage of the package: > 5kV (TC=25C)
15.00.5
3.20.1
13.70.2 4.20.2
1.40.2 1.60.2
3.00.5
2.60.1
Parameter
Symbol VCBO VCES VCEO VEBO ICP IC IB
Collector to base voltage
Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current
Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature
PC Tj
Tstg
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current
Collector to emitter voltage
ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l .
0.80.1
s Absolute Maximum Ratings
0.550.15
Ratings 800 800 500 8
Unit V V V V A A A
1
2
2.540.3 3 5.080.5
3.0 1.5 0.5 25
1:Base 2:Collector 3:Emitter TO-220D Full Pack Package
2.0
W
150
C C
-55 to +150
(TC=25C)
Symbol
Conditions
min
typ
max 100 100
Unit A A V
ICBO IEBO hFE1 hFE2
VCB = 800V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0
VCEO
500 15 8
Forward current transfer ratio
Pl
VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.6A
Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
VCE(sat) VBE(sat) fT ton tstg tf
IC = 0.6A, IB = 0.17A IC = 0.6A, IB = 0.17A VCE = 10V, IC = 0.1A, f = 1MHz IC = 0.6A, IB1 = 0.17A, IB2 = - 0.34A, VCC = 200V 20
1.0 1.5
V V MHz s s s
1.0 3.0 0.3
1
Power Transistors
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
1.0 TC=25C 100
2SC5392
VCE(sat) -- IC
Base to emitter saturation voltage VBE(sat) (V)
Ta=25C 100
VBE(sat) -- IC
Ta=25C
Collector current IC (A)
0.8
IB=70mA 60mA 50mA 40mA 30mA 20mA
10
10
0.6
1
1
0.4 10mA
M Di ain sc te on na tin nc ue e/ d
0.1 0.1 0.2 0 0 2 4 6 8 10 0.01 0.01 0.1 1 10 0.01 0.01 0.1 1
10
Collector to emitter voltage VCE (V)
Collector current IC (A)
Collector current IC (A)
hFE -- IC
1000
Ta=25C
100
10
1
0.1 0.01
0.1
1
Collector current IC (mA)
2
Pl
ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l .
10
Forward current transfer ratio hFE
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(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: - Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. - Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.

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