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 STC06IE170HV
Emitter switched bipolar transistor ESBT(R) 1700V - 6A - 0.15
PRELIMINARY DATA
Features
VCS(ON) 0.7V

IC 6A
RCS(ON) 0.15
High voltage / high current cascode configuration Low equivalent on resistance Very fast-switch, up to 150 kHz Squared RBSOA, up to 1700 V Very low CISS driven by RG = 47 Very low turn-off cross over time
1
23
4
TO247-4L HV
Description
The STC06IE170HV is manufactured in Monolithic ESBT technology, aimed to provide the best performance in High Frequency / High voltage applications. It is designed for use in Gate Driven based topologies.
Internal schematic diagram
Application
Auxiliary SMPS for three phase mains
Order code
Part number STC06IE170HV Marking C06IE170HV Package TO247-4L HV Packaging Tube
May 2007
Rev 2
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www.st.com 8
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Electrical ratings
STC06IE170HV
1
Electrical ratings
Table 1.
Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot Tstg TJ
Absolute maximum ratings
Parameter Collector-source voltage (VBS=VGS=0V) Base-source voltage (IC=0, VGS=0V) Source-base voltage (IC=0, VGS=0V) Gate-source voltage Collector current Collector peak current (tP< 5ms) Base current Base peak current (tP < 1ms) Total dissipation at Tc < 25C Storage temperature Max. operating junction temperature Value 1700 30 17 17 6 15 6 15 208 -40 to 150 150 Unit V V V V A A A A W C C
Table 2.
Symbol Rthj-case
Thermal data
Parameter Thermal resistance junction-case max Value 0.6 Unit C/W
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STC06IE170HV
Electrical characteristics
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 3.
Symbol ICS(SS) IBS(OS) ISB(OS) IGS(OS) VCS(ON) hFE VBS(ON) VGS(th) Ciss QGS(tot) ts tf ts tf VCS(dyn) VCS(dyn)
Electrical characteristics
Parameter Collector-source current (VBS=VGS=0V) Base-source current (IC=0, VGS=0V) Source-base current (IC=0, VGS=0V) Gate-source leakage (VBS=0V) Collector-source ON voltage DC current gain Base-source ON voltage Gate threshold voltage Input capacitance Gate-source charge Inductive load Storage time Fall time Inductive load Storage time Fall time Collector-source dynamic voltage (500ns) Collector-source dynamic voltage (1s) Maximum collector-source voltage switched without snubber Test conditions VCS(SS)=1700V VBS(OS)=30V VSB(OS)=17V VGS = 17V VGS=10V; IC =6; IB =1.2A VGS=10V; IC =2; IB =0.2A VCS=1V; VGS=10V; IC =6A VCS=1V; VGS=10V; IC =2A VGS=10V; IC =6; IB =1.2A VGS=10V; IC =2; IB =0.12A VBS=VGS; IB =250A VCS=25V; VGS=0V; f =1MHz VGS=10V TBD 2 1 0.6 5.5 11 1.3 0.9 3 TBD TBD TBD 4 V V V pF nC ns Min. Typ. Max. 100 10 100 100 Unit A A A nA V V
TBD
TBD
ns
TBD TBD
TBD TBD
V V
VCSW
RG=47; hFE=5; IC=6A
1700
V
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Electrical characteristics
STC06IE170HV
2.1
Figure 1.
Electrical characteristics (curves)
Output characteristics Figure 2. DC current gain
Figure 3.
Collector-source on voltage
Figure 4.
Collector-source on voltage
Figure 5.
Base-source on voltage
Figure 6.
Base-source on voltage
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STC06IE170HV
Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STC06IE170HV
TO247-4L
HV Mechanical data
DIM. A A1 A2 b b2 c D D1 E e e1 L L1 L2 L3 oP S
MIN. 4.85 2.20 0.95 2.50 0.40 23.85 15.45 2.54 5.08 10.20 2.20
mm. TYP 2.50 1.27 1.10
MAX. 5.15 2.60 1.30 2.90 0.80 24.15 15.75
24 21.50 15.60
2.50 18.50 3 5.50
10.80 2.80
3.55
3.65
7734874
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STC06IE170HV
Revision history
4
Revision history
Table 4.
Date 11-May-2007 21-May-2007
Revision history
Revision 1 2 First version Base current values changed on Table 1 Changes
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STC06IE170HV
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