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| Datasheet File OCR Text: |
| Data Sheet 200 mW EPITAXIAL PLANAR DIODES Mechanical Dimensions .110 .060 .037 1 3 2 .016 Description BAV70 3 1 2 Pin 2 Pin 3 Pin 1 .043 .115 .037 .016 .004 Features n PLANAR PROCESS n 200 mW POWER DISSIPATION n INDUSTRY STANDARD SOT-23 PACKAGE n MEETS UL SPECIFICATION 94V-0 BAV70 Units Volts Volts Maximum Ratings Peak Reverse Voltage...VRM RMS Reverse Voltage...VR(rms) Average Forward Rectified Current...IO Non-Repetitive Peak Forward Surge Current...IFSM Power Dissipation...PD Operating Temperature Range...TJ Storage Temperature Range...TSTRG Electrical Characteristics Maximum Forward Voltage...VF @ IF = 50 mA Maximum DC Reverse Current...IR Maximum Diode Capacitance...CD Maximum Reverse Recovery Time...tRR .01 uF PVV = 100ns 5K Ohms 50 Ohms RG = 50 Ohms Page 10-20 @ VR = 70V BAV70 85 75 ............................................. 625 ............................................... mAmps ............................................. 4.0 ............................................... ......................................... 200 .......................................... ......................................... -25 to 85 .......................................... ......................................... -65 to 150 .......................................... ............................................. 1.0 ............................................... ............................................. 2.5 ............................................... ............................................. 1.5 ............................................... ............................................. 4.0 ............................................... Amps mW C C Volts Amps pF ns Test Device Under Test IF IR Output Trr 0.1 IR |
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