View 2SK346606_4112307.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2SK3466
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
2SK3466
Chopper Regulator Applications
* * * * Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: Yfs = 4.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 500 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 30 5 20 50 180 5 5 150 -55 to 150 Unit V V V A W mJ A mJ C C
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
SC-97 2-9F1B
Weight: 0.74 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 2.5 Unit C/W
Circuit Configuration
4
Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 12.2 mH, RG = 25 , IAR = 5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
1
3
1
2006-11-06
2SK3466
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ID = 2.5 A VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 5 A VDS = 10 V, ID = 5 A Min 500 2.0 2.5 Typ. 1.35 4.0 780 60 200 12 Max 10 100 4.0 1.50 pF Unit A A V V S
10 V Output

ns

Turn-ON time Switching time Fall time
ton tf
VGS 0V
25
15
RL = 90
15

nC
Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge
toff Qg Qgs Qgd
Duty < 1%, tw = 10 s =
VDD 225 V - 60 17 11 6
VDD 400 V, VGS = 10 V, ID = 5 A -

Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDSF IDRP VDSF trr Qrr Test Condition IDR = 5 A, VGS = 0 V IDR = 5 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 1400 9 Max 5 20 -1.7 Unit A A V ns C
Marking
Part No. (or abbreviation code)
K3466
Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2
2006-11-06
2SK3466
ID - VDS
5 Common source Tc = 25C 4 Pulse test 10, 15 6 5.5 5.25 10 Common source Tc = 25C 8 Pulse test
ID - VDS
15 10 6
Drain current ID (A)
3
Drain current ID (A)
5
6
5.5
2
4.75
4 5 2
4.5 1 VGS = 4 V 0 0 2 4 6 8 10
4.5 VGS = 4 V
0 0
10
20
30
40
50
Drain-source voltage
VDS (V)
Drain-source voltage
VDS
(V)
ID - VGS
10 Common source VDS = 20 V 8 Pulse test Tc = -55C 20
VDS - VGS
Common source
VDS (V)
Tc = 25C 16 Pulse test
Drain current ID (A)
25
100 4
Drain-source voltage
6
12
8
ID = 5 A
2
4
2.5 1.2
0 0
2
4
6
8
10
0 0
4
8
12
16
20
Gate-source voltage
VGS (V)
Gate-source voltage
VGS (V)
Yfs - ID
10
RDS (ON) - ID
10 Tc = -55C 25 100 Common source Tc = 25C 5 Pulse test 3 VGS = 10 V 15 1
|Yfs| (S)
Common source VDS = 20 V
Forward transfer admittance
3
1
0.5 0.3 0.1 0.3 0.5 1 3 5 10
Drain-source ON resistance RDS (ON) ()
5 Pulse test
0.5 0.3 0.1 0.3 0.5 1 3 5 10
Drain current ID (A)
Drain current ID (A)
3
2006-11-06
2SK3466
RDS (ON) - Tc
5 Common source VGS = 10 V Pulse test 10 Common source Tc = 25C Pulse test 3
IDR - VDS
Drain-source ON resistance RDS (ON) ()
4
3
1.2
Drain reverse current IDR
2.5
(A)
ID = 5 A
1 0.5 0.3 10 5 3 1 VGS = 0, -1 V -0.8 -1.0 -1.2
2
1
0 -80
-40
0
40
80
120
160
0.1 0
-0.2
-0.4
-0.6
Case temperature Tc (C)
Drain-source voltage
VDS
(V)
Capacitance - VDS
2000 1000 Ciss 5
Vth - Tc
Common source VDS = 10 V ID = 1 mA Pulse test
Vth (V) Gate threshold voltage
100
(pF)
500 300
4
Capacitance C
3
100 Coss 50 30 Common source VGS = 0 V 10 f = 1 MHz Tc = 25C 5 0.1 0.3 0.5 1
2
Crss
1
3
5
10
30 50
0 -80
-40
0
40
80
120
160
Drain-source voltage
VDS (V)
Case temperature Tc (C)
PD - Tc
80 500
Dynamic input/output characteristics
20 Common source ID = 5 A Tc = 25C Pulse test 16 VDS VDD = 100 V 300 200 200 400 8 12
Drain power dissipation PD (W)
(V)
400
Drain-source voltage
VDS
60
40
20
100
VGS
4
0 0
40
80
120
160
200
0 0
5
10
15
20
0 25
Case temperature Tc (C)
Total gate charge Qg (nC)
4
2006-11-06
Gate-source voltage
VGS (V)
2SK3466
rth - tw Normalized transient thermal impedance
3
1 0.5
Duty = 0.5
rth (t)/Rth (ch-c)
0.3
0.2 0.1
0.1
0.05 PDM Single pulse t T
0.05 0.02 0.03 0.01 0.01 0.005 0.003 10 30
Duty = t/T Rth (ch-c) =2.5C/W 100 300 1m 3m 10 m 30 m 100 m 300 m 1 3 10
Pulse width
tw (s)
Safe operating area
100 200
EAS - Tch
30 ID max (pulsed) * 100 s * 10
Avalanche energy EAS (mJ)
50
160
Drain current ID (A)
5 3 1 0.5 0.3
ID max (continuous) * 1 ms *
120
80
DC operation Tc = 25C
40
* Single nonrepetitive 0.1 pulse Tc = 25C 0.05 Curves must be derated 0.03 0.01 1 linearly with increase in temperature. 3 5 10 30 50 VDSS max 100 300 500 1000
0 25
50
75
100
125
150
Channel temperature (initial) Tch (C)
Drain-source voltage
VDS (V)
15 V -15 V
BVDSS IAR VDD VDS
Test circuit RG = 25 VDD = 90 V, L = 12.2 mH
Wave form
AS =
1 B VDSS L I2 B 2 VDSS - VDD
5
2006-11-06
2SK3466
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
6
2006-11-06

▲Up To Search▲

Price & Availability of 2SK346606

	To Download 2SK346606 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .