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ZXTP2009Z
40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
SUMMARY BVCEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION
Packaged in the SOT89 outline this new low saturation 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions.
FEATURES
* Extremely low equivalent on-resistance * 5.5 amps continuous current * Up to 15 amps peak current * Very low saturation voltages < -60mV @ -1A
SOT89
APPLICATIONS
* DC - DC converters * MOSFET gate drivers * Charging circuits * Power switches * Motor control
ORDERING INFORMATION
DEVICE ZXTP2009ZTA REEL SIZE 7" TAPE WIDTH 12mm QUANTITY PER REEL 1,000 units
PINOUT
DEVICE MARKING
53Z
TOP VIEW
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ZXTP2009Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector-base voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current (b) Peak pulse current Power dissipation at T A =25C (a) Linear derating factor Power dissipation at T A =25C (b) Linear derating factor Power dissipation at T A =25C (c) Linear derating factor Power dissipation at T A =25C (d) Linear derating factor Operating and storage temperature range T j , T stg PD PD PD SYMBOL BV CBO BV CBS BV CEO BV EBO IC I CM PD LIMIT -50 -50 -40 -7.5 -5.5 -15 0.9 7.2 1.5 12 2.1 16.8 3 24 -55 to 150 UNIT V V V V A A W mW/C W mW/C W mW/C W mW/C C
THERMAL RESISTANCE
PARAMETER Junction to ambient (a) Junction to ambient Junction to ambient Junction to ambient
(b) (c) (d)
SYMBOL R JA R JA R JA R JA
VALUE 139 83 60 42
UNIT C/W C/W C/W C/W
NOTES (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB measured at t 5 secs.
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CHARACTERISTICS
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ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated)
PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage SYMBOL BV CBO BV CES BV CEO BV EBO I CBO I CES I EBO V CE(SAT) MIN. -50 -50 -40 -7.5 TYP. -90 -90 -58 -8.3 1 1 1 -15 -44 -50 -120 -70 -125 -130 -162 Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio V BE(SAT) V BE(ON) H FE 200 200 170 110 Transition frequency Output capacitance Switching times fT C OBO td tr ts tr Switching times td tr ts tr * Measured under pulsed conditions. Pulse width -820 -1000 -778 -869 390 350 290 175 152 53 18 17 325 60 55 107 264 103 300 s; duty cycle 2%. ns I C =-2A, V CC =-30V, I B1 =I B2 =-20mA 550 -20 -20 -20 -30 -60 -70 -165 -80 -175 -175 -185 -900 -1075 -850 -950 MAX. UNIT CONDITIONS V V V V nA nA nA mV mV mV mV mV mV mV mV mV mV mV mV I C =-100 A I C =-100 A I C =-10mA* I E =-100 A V CB =-40V V CB =-32V V EB =-6V I C =-0.1A, I B =-10mA* IC=-1A, IB=-100mA* IC=-1A, IB=-50mA* IC=-1A, IB=-10mA* IC=-2A, IB=-200mA* IC=-2A, IB=-40mA* IC=-3.5A, IB=-175mA* IC=-5.5A, IB=-550mA* I C =-2A, I B =-40mA* IC=-5.5A, IB=-550mA* I C =-2A, V CE =-2V* IC=-5.5A, VCE=-2V* I C =-10mA, V CE =-2V* IC=-0.5A, VCE=-2V* IC=-2A, VCE=-2V* IC=-5.5A, VCE=-2V* MHz IC =-50mA, VCE =-10V f=100MHz pF ns V CB =-10V, f=1MHz* I C =-1A, V CC =-10V, I B1 =I B2 =-100mA
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TYPICAL CHARACTERISTICS
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PACKAGE OUTLINE PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters DIM Min A b b1 b2 c D 1.40 0.38 1.50 0.28 4.40 Max 1.60 0.48 0.53 1.80 0.44 4.60 Min 0.550 0.015 0.060 0.011 0.173 Max 0.630 0.019 0.021 0.071 0.017 0.181 e E E1 G H Inches DIM Min 1.40 3.75 2.90 2.60 Max 1.50 4.25 2.60 3.00 2.85 Min 0.055 0.150 0.114 0.102 Max 0.059 0.167 0.102 0.118 0.112 Millimeters Inches
(c) Zetex Semiconductors plc 2005
Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com
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