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| N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS(on)= 4 ZVN2110C G D S REFER TO ZVN2110A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg E-Line TO92 Compatible VALUE 100 320 6 20 UNIT V mA A V mW C 700 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf 250 75 25 8 7 8 13 13 1.5 4 100 0.8 2.4 20 1 100 MAX. UNIT CONDITIONS. V V nA A A ID=1mA, VGS=0V ID=1mA, VDS= VGS VGS= 20V, VDS=0V VDS=100V, VGS=0 VDS=80V, VGS=0V, T=125C(2) VDS=25V, VGS=10V VGS=10V,ID=1A VDS=25V,ID=1A A mS pF pF pF ns ns ns ns VDS=25 V, VGS=0V, f=1MHz VDD 25V, ID=1A (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. 3-367 ( 3 ) |
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