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PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
ISSUE 3 JUNE 94 FEATURES * 2 Amps continuous current * Up to 5 Amps peak current * Very low saturation voltage * Excellent gain characteristics up to 2 Amps * Spice model available
ZTX956
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg -220 -200 -6 -5 -2 1.58 1.2
E-Line TO92 Compatible VALUE UNIT V V V A A W W C
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltag Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R 1K IEBO VCE(sat) -30 -110 -150 -920 MIN. -220 -220 -200 -6 TYP. -300 -300 -240 -8 -50 -1 -50 -1 -10 -50 -150 -250 -1050 MAX. UNIT V V V V nA nA nA mV mV mV mV CONDITIONS. IC=-100A IC=-1A, RB 1K IC=-10mA* IE=-100A VCB=-200V VCB=-200V, Tamb=100C VCB=-200V VCB=-200V, Tamb=100C VEB=-6V IC=-100mA, IB=-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-400mA* IC=-2A, IB=-400mA
A A
VBE(sat)
3-324
ZTX956
ELECTRICAL CHARACTERISTICS (at Tamb = 25C)
PARAMETER Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times SYMBOL VBE(on) hFE 100 100 50 MIN. TYP. -770 200 200 150 10 110 32 67 1140 MAX. -900 300 MHz pF ns ns UNIT mV CONDITIONS. IC=-2A, VCE=-5V* IC=-10mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* IC=-5A, VCE=-5V* IC=-100mA, VCE=-10V f=50MHz VCB=-20V, f=1MHz IC=-1A, IB1=-100mA IB2=100mA, VCC=-50V
fT Cobo ton toff
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
THERMAL CHARACTERISTICS
PARAMETER Thermal Resistance: Junction to Ambient Junction to Case SYMBOL Rth(j-amb) Rth(j-case) MAX. 150 50 UNIT C/W C/W
Max Power Dissipation - (Watts)
4.0
Thermal Resistance (C/W)
150 t1
D.C.
D=t1/tP
3.0
Ca
se
100
te
tP
D=0.6
2.0
m
1.0
Amb ient te mpe ratu
-40 -20 0 20 40
pe ra tu re
50
D=0.2 D=0.1
re
60 80 100 120 140 160 180 200
0 0.0001
D=0.05 Single Pulse
0.001
0.01
0.1
1
10
100
T -Temperature (C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-325
ZTX956
TYPICAL CHARACTERISTICS
1.6 IC/IB=5 IC/IB=20 Tamb=25C 1.6
-55C +25C +175C
IC/IB=5
VCE(sat) - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 20
VCE(sat) - (Volts)
1.4
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0
0.01
0.1
1
10 20
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
1.6
hFE - Typical Gain
hFE - Normalised Gain
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0
+100C +25C -55C
VCE=5V 300 1.6 1.4
-55C +25C +100C +175C
IC/IB=10
VBE(sat) - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2
200
100
0.01
0.1
1
10 20
0
0.01
0.1
1
10 20
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
10
-55C +25C +100C +175C
VBE(sat) v IC
Single Pulse Test at Tamb=25C
1.6 1.4
VCE=5V
IC - Collector Current (Amps)
VBE - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 20
1
0.1
D.C. 1s 100ms 10ms 1.0ms 0.1ms
0.01 1 10 100 1000
IC - Collector Current (Amps)
VCE - Collector Voltage (Volts)
VBE(on) v IC
Safe Operating Area
3-326

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