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| N-CHANNEL ENHANCEMENT MODE VERTICAL IGBT ISSUE 2 MAY 94 ZCN0545A This IGBT combines the high input impedance of the DMOSFET with the high current density of the BJT. FEATURES * Extremely low on state voltage * No need to derate for higher temperatures * Excellent temperature immunity * High input impedance * Reverse blocking characteristic which is Independent of gate bias * Low input capacitance * Characterised for logic level drive APPLICATIONS * Fluorescent lamp driver * Automotive load drivers * High voltage DC-DC converters * Darlington replacement * Telecoms hook switch and earth recall switch D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS (at Tamb=25C unless otherwise stated) PARAMETER SYMBOL VDS VSD ID IDP IDMR IDM VGS Ptot PDP Tj:Tstg @ Tamb=25C @ Tamb=125C VALUE 450 30 0.32 0.37 2 1 20 UNIT V V A A A A V W W C Forward Drain-Source Voltage Reverse Drain Source Voltage Continuous Drain Current Practical Continuous Drain Current* Pulsed Drain Current Gate-Source Voltage Power Dissipation at Tamb=25C Practical Power Dissipation* Operating and Storage Temperature Range 0.6 0.8 -55 to +125 * With the device mounted in a typical manner on a P.C.B. with at least 1 sq. inch of copper. 3-112 ZCN0545A ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Forward Drain-Source Breakdown Voltage Reverse Drain-Source Breakdown Voltage (4) Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain Source Saturation Voltage (1) SYMBOL MIN. BVDSS BVSD VGS(th) IGSS IDSS VDS(SAT) 450 30 1 3 20 10 400 3 3 6 90 12 6 150 200 300 TYP. MAX. UNIT CONDITIONS. V V V nA A A VGS=0V ID=1mA ID=1mA, VDS= VGS VGS= 20V, VDS=0V VDS=max. rating, VGS=0 VDS=0.8 x max. rating, VGS=0V, T=125C (2) ID=500mA, VGS=10 V ID=250mA, VGS=5 V VGS=10V,ID=0.5A V V Static Drain-Source RDS(on) On-State Resistance (1) Input Capacitance (2) Ciss Common Source Coss Output Capacitance (2) Reverse Transfer Capacitance (2) Switching Times (2)(3) Crss ton toff pF pF pF ns ns VDD 25V, VGEN=10V ID=1A, RGS=50 VDS=25 V, VGS=0V, f=1MHz (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator (4) One minute maximum duration. Exceeds common international automotive reverse battery test specifications t 0.8 1 t 0.6 200 D=1 (DC) 160 0.4 p D= t t 1 p 120 D=0.5 0.2 80 40 D=0.2 D=0.1 0 0 25 50 75 100 125 0 100us 1ms 10ms 100ms SINGLE PULSE 1s 10s 100s Temperature Pulse Width Derating Curve Transient Thermal Resistance 3-113 ZCN0545A TYPICAL CHARACTERISTICS V 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 /5=10V 9V NOTE : 80s Pulsed test 2.0 8V 1.6 7V 1.2 6V 0.8 5V 4V 0.4 3V 0 0 2 4 6 8 10 0 0 50 100 125 VDS - Drain Source Voltage (V) TJ - Juntion Temperature (C) Saturation Characteristics Pulsed Current v Temperature 80 C iss 0.5 0.4 60 0.3 NOTE : V 40 /5=0V 0.2 20 C C 0 1 10 100 oss rss NOTE : 80s Pulsed test VDS =0V 0.1 0 0 0.4 0.8 1.2 1.6 2.0 VDS - Drain Source Voltage (V) ID - Drain Current (A) Capacitance v Drain Source Voltage Transconductance v Drain Current 10 3.5 3.0 1 2.5 VDS =0V 2.0 1.5 DC 1s 0.1s 1 ms 1 00us 0.1 1.0 0.5 0.01 1 10 100 1000 0 0.01 0.1 1 10 VDS - Drain Source Voltage (V) ID - Drain Current (A) Safe Operating Area (Tamb=25C, single pulse) Fall Time v Drain Current 3-114 |
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