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| FDS9958 Dual P-Channel PowerTrench(R) MOSFET July 2007 FDS9958 Dual P-Channel PowerTrench MOSFET -60V, -2.9A, 105m Features Max rDS(on) =105m at VGS = -10V, ID = -2.9A Max rDS(on) =135m at VGS = -4.5V, ID = -2.5A RoHS Compliant (R) tm General Description These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench(R) process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits. Applications Load Switch Power Management D2 D2 D1 D1 G2 S2 G1 Pin 1 SO-8 S1 D1 8 D2 D2 D1 5 6 7 Q1 Q2 4 3 2 1 G2 S2 G1 S1 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Dual Operation Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 3) (Note 1a) Ratings -60 20 -2.9 -12 54 2 1.6 0.9 -55 to +150 C W Units V V A mJ Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 40 78 C/W Package Marking and Ordering Information Device Marking FDS9958 Device FDS9958 Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500units (c)2007 Fairchild Semiconductor Corporation FDS9958 Rev.C 1 www.fairchildsemi.com FDS9958 Dual P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -48V, VGS = 0V TJ = 125C VGS = 20V, VDS = 0V -60 -52 -1 -100 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -10V, ID = -2.9A VGS = -4.5V, ID = -2.5A VGS = -10V, ID = -2.9A, TJ= 125C VDD = -5V, ID = -2.9A -1.0 -1.6 4 82 103 131 7.7 105 135 190 S m -3.0 V mV/C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -30V, VGS = 0V, f = 1MHz 765 90 40 1020 120 65 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0V to -10V VGS = 0V to -4.5V VDD = -30V, ID = -2.9A VDD = -30V, ID = -2.9A, VGS = -10V, RGEN = 6 6 3 27 6 16 8 2 3 12 10 43 12 23 12 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -1.3A (Note 2) -0.8 26 21 -1.2 42 35 V ns nC IF = -2.9A, di/dt = 100A/s NOTES: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 1 in2 pad of 2 oz copper b) 135C/W when mounted on a minimun pad 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3. UIL condition: Starting TJ = 25C, L = 3mH, IAS = 6A, VDD = 60V, VGS = 10V. (c)2007 Fairchild Semiconductor Corporation FDS9958 Rev.C 2 www.fairchildsemi.com FDS9958 Dual P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted VGS = -10V VGS = - 4V VGS = -3.5V VGS = -5V VGS = - 4.5V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 12 10 -ID, DRAIN CURRENT (A) 2.5 VGS = -3V 2.0 VGS = -3.5V VGS = -4V 8 6 4 2 0 0 1 1.5 VGS = -4.5V VGS = -5V VGS = -10V VGS = -3V PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX 1.0 PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX 0.5 2 3 4 0 2 4 6 8 10 12 -VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 240 SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75 ID = -2.9A VGS = -10V ID = -2.9A 210 180 PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX rDS(on), DRAIN TO TJ = 125oC 150 120 TJ = 25oC 90 60 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature 12 10 -ID, DRAIN CURRENT (A) PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX -IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 20 10 VGS = 0V VDD = -5V 8 6 4 2 0 0 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) TJ = 150oC TJ = 25oC TJ = -55oC 1 TJ = 150oC TJ = 25oC TJ = -55oC 0.1 0.01 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2007 Fairchild Semiconductor Corporation FDS9958 Rev.C 3 www.fairchildsemi.com FDS9958 Dual P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 10 -VGS, GATE TO SOURCE VOLTAGE(V) ID = -2.9A 2000 1000 VDD = -20V 8 6 VDD = -30V Ciss CAPACITANCE (pF) 4 VDD = -40V 100 Coss Crss f = 1MHz VGS = 0V 2 0 0 5 10 Qg, GATE CHARGE(nC) 15 20 10 0.1 1 10 60 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 3.0 -ID, DRAIN CURRENT (A) 4 -IAS, AVALANCHE CURRENT(A) 3 2.5 2.0 VGS = -4.5V VGS = -10V 2 TJ = 125oC TJ = 25oC 1.5 1.0 RJA = 78 C/W o 0.5 1 0.01 0.0 25 0.1 1 10 100 50 75 100 o 125 150 tAV, TIME IN AVALANCHE(ms) TA, AMBIENT TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 20 P(PK), PEAK TRANSIENT POWER (W) Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 200 0.1ms 10 -ID, DRAIN CURRENT (A) 100 VGS = -10V SINGLE PULSE RJA = 135oC/W TA = 25oC 1ms 1 THIS AREA IS LIMITED BY rDS(on) 10ms 100ms 1s 10s DC 10 0.1 SINGLE PULSE TJ = MAX RATED RJA = 135oC/W TA = 25oC 1 0.5 -3 10 10 -2 0.01 0.1 1 10 100 200 10 -1 10 0 10 1 10 2 10 3 -VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation (c)2007 Fairchild Semiconductor Corporation FDS9958 Rev.C 4 www.fairchildsemi.com FDS9958 Dual P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE 0.01 0.005 RJA = 135 C/W -3 o 10 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve (c)2007 Fairchild Semiconductor Corporation FDS9958 Rev.C 5 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I30 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production |
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