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| MITSUBISHI IGBT MODULES CM600DU-24F HIGH POWER SWITCHING USE CM600DU-24F G IC ................................................................... 600A G VCES.......................................................... 1200V G Insulated G 2-elements Type in a pack APPLICATION General purpose inverters & Servo controlers, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 140 130 110 0.25 36 43.8 10 13.8 11.5 10 (15) 9 G2 20.4 E2 (26) (26) (26) Tc measured point 110 0.25 C2E1 14.5 E1 3-M8 NUTS 65 4-M4 NUTS G1 14.5 130 20 40 E2 C1 (15) Tc measured point 4-6.5MOUNTING RTC 24.5 -0.5 35 -0.5 +1 +1 C2E1 E2 RTC C1 G1 E1 8 CIRCUIT DIAGRAM Mar. 2002 E2 G2 HOLES MITSUBISHI IGBT MODULES CM600DU-24F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25C Pulse TC = 25C Pulse TC = 25C Conditions Ratings 1200 20 600 1200 600 1200 1540 -40 ~ +150 -40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 1200 Unit V V A A A A W C C V N*m g (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M8 Mounting holes M6 G(E) Terminal M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance*3 External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 60mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 600A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 600V, IC = 600A, VGE = 15V VCC = 600V, IC = 600A VGE1 = VGE2 = 15V RG = 1.0, Inductive load switching operation IE = 600A IE = 600A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound applied*2 (1/2 module) Tc measured point is just under the chips Min. -- 5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 1.0 Limits Typ. -- 6 -- 1.95 2.05 -- -- -- 6600 -- -- -- -- -- 43.2 -- -- -- 0.010 -- -- Max. 2 7 80 2.55 -- 230 10 6 -- 450 200 800 300 500 -- 3.35 0.081 0.11 -- 0.032 5.2 Unit mA V A V nF nF nF nC ns ns ns ns ns C V C/W C/W C/W C/W Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone "G-746". *3 : If you use this value, Rth(f-a) should be measured just under the chips. Mar. 2002 MITSUBISHI IGBT MODULES CM600DU-24F HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) Tj=25C VGE=20V 10 9.5 9 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) 11 15 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 1200 1000 800 600 400 200 0 3 VGE = 15V 2.5 2 1.5 1 0.5 0 Tj = 25C Tj = 125C 0 200 400 600 800 1000 1200 8.5 8 0 0.5 1 1.5 2 2.5 3 3.5 4 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 104 7 5 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 6 Tj = 25C Tj = 25C EMITTER CURRENT IE (A) 103 7 5 3 2 IC = 1200A IC = 600A IC = 240A 102 7 5 3 2 8 10 12 14 16 18 20 22 101 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 103 103 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) tf td(on) CAPACITANCE Cies, Coes, Cres (nF) 7 5 Cies 102 7 5 3 2 SWITCHING TIMES (ns) 3 2 102 7 5 3 2 tr Conditions: VCC = 600V VGE = 15V RG = 1.0 Tj = 125C Inductive load 2 3 5 7 102 2 3 5 7 103 101 7 5 3 2 101 7 5 3 2 Coes VGE = 0V Cres 100 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 1 10 COLLECTOR CURRENT IC (A) Mar. 2002 MITSUBISHI IGBT MODULES CM600DU-24F HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (C/W) 103 7 5 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10-5 2 3 5 710-4 2 3 5 710-3 2 3 5 710-2 2 3 5 7 10-1 100 7 IGBT part: 5 Per unit base = Rth(j-c) = 0.081C/W 3 FWDi part: 2 Per unit base = Rth(j-c) = 0.11C/W 10-1 7 5 3 2 7 5 3 2 3 2 102 1 7 5 3 2 Irr trr Conditions: VCC = 600V VGE = 15V RG = 1.0 Tj = 25C Inductive load 2 3 5 7 102 2 3 5 7 103 10-2 Single Pulse TC = 25C 100 7 5 3 2 101 1 10 10-3 10-1 2 3 5 7 100 2 3 5 7 101 TMIE (s) EMITTER CURRENT (A) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 0 2000 4000 6000 8000 10000 IC = 600A VCC = 400V VCC = 600V GATE CHARGE QG (nC) Mar. 2002 |
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