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| Composite Transistors XN5531 Silicon NPN epitaxial planer transistor Unit: mm For high frequency oscillation and mixing 0.650.15 6 0.95 2.8 -0.3 +0.2 +0.25 1.5 -0.05 0.650.15 1 0.3 -0.05 2.9 -0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.90.1 +0.2 5 2 0.95 4 3 q 2SC3130 x 2 elements 1.1-0.1 0.40.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg (Ta=25C) Ratings 15 10 3 50 200 150 -55 to +150 Unit V V V mA mW C 1 : Collector (Tr1) 2 : Emitter (Tr2) 3 : Collector (Tr2) 4 : Base (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Marking Symbol: 5M Internal Connection 6 Tr1 1 2 3 C 5 4 Tr2 s Electrical Characteristics Parameter Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Forward current transfer hFE ratio hFE2/hFE1 ratio Collector to emitter saturation voltage Collector output capacitance Transition frequency Collector to base parameter Common base reverse transfer capacitance *1 (Ta=25C) Symbol VCEO VEBO ICBO ICEO hFE1 hFE (small/large)*1 hFE2/hFE1 VCE(sat) Cob fT rbb'*CC Crb Conditions IC = 2mA, IB = 0 IE = 10A, IC = 0 VCB = 10V, IE = 0 VCE = 10V, IB = 0 VCE = 4V, IC = 5mA VCE = 4V, IC = 5mA VCE = 4V, IC = 100A VCE = 4V, IC = 5mA IC = 20mA, IB = 4mA VCB = 4V, IE = 0, f = 1MHz VCB = 4V, IE = -5mA, f = 200MHz VCB = 4V, IE = -5mA, f = 30MHz VCB = 4V, IE = 0, f = 1MHz 1.4 0.9 1.9 11.8 0.25 75 0.5 0.75 200 0.99 1.6 0.5 1.1 2.5 13.5 0.35 V pF GHz ps pF min 10 3 1 10 400 typ max Unit V V A A Ratio between 2 elements 0 to 0.05 0.1 to 0.3 0.8 0.16-0.06 +0.2 s Basic Part Number of Element +0.1 1.450.1 s Features 0.5 -0.05 +0.1 +0.1 1 Composite Transistors PT -- Ta 240 80 Ta=25C XN5531 IC -- VCE 60 25C 50 VCE=4V IC -- VBE Total power dissipation PT (mW) 200 Collector current IC (mA) 60 160 Collector current IC (mA) Ta=75C 40 -25C IB=500A 40 400A 300A 200A 20 100A 120 30 80 20 40 10 0 0 40 80 120 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC 100 hFE -- IC IC/IB=10 360 VCE=4V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 fT -- I E VCB=4V Ta=25C Collector to emitter saturation voltage VCE(sat) (V) 300 Ta=75C 240 25C 10 3 1 0.3 0.1 0.03 0.01 0.1 25C Ta=75C 180 120 -25C 60 -25C Transition frequency fT (GHz) 30 Forward current transfer ratio hFE 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 0 -0.1 -0.3 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 1.6 Collector output capacitance Cob (pF) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 3 10 f=1MHz IE=0 Ta=25C 30 100 Collector to base voltage VCB (V) 2 |
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