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| WTU1333 Surface Mount P-Channel Enhancement Mode MOSFET 1 3 DRAIN DRAIN CURRENT -550m AMPERES DRAIN SOURCE VOLTAGE -20 VOLTAGE *Super High Dense Cell Design For Low RDS(ON) R DS(ON) <600m@V GS =-10V *Simple Gate Drive *Small package Outline *Fast Switching Speed *SOT-323 Package Features: GATE SOURCE 3 1 2 2 SOT-323 Description *Designer with best combination of fast switching *Low on-resistance *Cost-effectiveness Maximum Ratings(T =25 C Unless Otherwise Specified) A Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 ,(TA=25C) ,(TA=70C) Pulsed Drain Current1,2 Total Power Dissipation(TA=25C) Maximum Thermal Resistace Junction-ambient3 Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD RJA TJ,Tstg Value -20 12 -550 -440 2.5 0.35 360 - 55~+150 Unit V mA W C/W C Device Marking WTU1333=1333 http:www.weitron.com.tw WEITRON 1/6 15-Jun-05 WTU1333 Electrical Characteristics (TA = 25 Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0,ID=-250A Gate-Source Threshold Voltage VDS=VGS,ID=-250A Gate-Source Leakage current VGS=12V Drain-SourceLeakage Current(Tj=25C) VDS=-20V,VGS=0 Drain-SourceLeakage Current(Tj=70C) VDS=-16V,VGS=0 Drain-SourceOn-Resistance VGS=-10V,ID=-550mA VGS=-4.5V,ID=-500mA VGS=-2.5V,ID=-300mA Forward Transconductance VDS=-5V,ID=-550mA BVDSS VGS(Th) IGSS -20 -0.5 IDSS -10 V -1.2 100 -1 A nA RDS(on) - 1 600 800 1000 - m gfs S Dynamic Input Capacitance VGS=0V,VDS=-10V,f=1.0MHz Output Capacitance VGS=0V,VDS=-10V,f=1.0MHz Reverse Transfer Capacitance VGS=0V,VDS=-10V,f=1.0MHz Ciss Coss Crss 66 25 20 105.6 pF http:www.weitron.com.tw WEITRON 2/6 15-Jun-05 WTU1333 Switching Turn-on Delay Time2 VDS=-10V,VGS=-5V,ID=-500mA,RD=20,RG=3.3 Rise Time VDS=-10V,VGS=-5V,ID=-500mA,RD=20,RG=3.3 Turn-off Delay Time VDS=-10V,VGS=-5V,ID=-500mA,RD=20,RG=3.3 Fall Time VDS=-10V,VGS=-5V,ID=-500mA,RD=20,RG=3.3 Total Gate Charge2 VDS=-16V,VGS=-4.5V,ID=-500mA Gate-Source Charge VDS=-16V,VGS=-4.5V,ID=-500mA Gate-Source Change VDS=-16V,VGS=-4.5V,ID=-500mA td(on) tr td(off) tf Qg Qgs Qgd 5 8 10 2 1.7 0.3 0.4 ns 2.7 nC Source-Drain Diode Characteristics Forward On Voltage2 VGS=0V,IS=-300mA Note: 1. Pulse width limited by Max, junction temperature. 2. Pulse width 300s, duty cycle 2%. 3. Surface mounted on FR4 board, t 10sec. VSD - - -1 2 . V http:www.weitron.com.tw WEITRON 3/6 15-Jun-05 WTU1333 2.5 -5.0V 2.5 -5.0V -4.5V -I D ,DRAIN CURRENT (A) 1.5 ID ,Drain Current (A) 2.0 TA=25C -4.5V -3.5V 2.0 TA=150C -3.5V -2.5V 1.5 -2.5V 1.0 1.0 0.5 0.0 VG=-2.0V 0.5 0.0 VG= -2.0V 0.0 0.5 1.0 1.5 2.0 2.5 0.0 FIG.1 Typical Output Characteristics 1400 1200 1000 1.6 -VDS ,DRAIN-TO-SOURCE VOLTAGE(V) Fig.2 Typical Output Characteristics VDS ,Drain-to-source Voltage(V) 0.5 1.0 1.5 2.0 2.5 I D = -0.3A TA = 25C Normalized RDs(on) 1.4 I D = -0.5A VG = -4.5V RDs(on) (m) 1.2 800 1.0 600 400 200 0.8 1 Fig.3 On-Resistance v.s. Gate Voltage 1.0 2.0 -VGS ,Gate-to-source Voltage(V) 4 7 10 0.6 -50 0 50 100 150 Fig.4 Normalized OnResistance Tj ,Junction Temperature(C) Normalized -VGS(th)(V) 1.2 0.8 1.5 0.6 -IS(A) 0.4 Tj = 150C Tj = 25C 1.0 0.2 0.5 0.0 0 0.2 0.4 0.6 0.8 1 0.0 -50 Fig.5 Forward Characteristics of Reverse Diode -VDS ,Source-to-Drain Voltage(V) Fig.6 Gate Threshold Voltage v.s. Junction Temperature Tj ,Junction Temperature(C) 0 50 100 150 WEITRON http://www.weitron.com.tw 4/6 15-Jun-05 WTU1333 12 100 f = 1.0MHz Ciss -VGS , Gate to Source Voltage(V) 10 I D = -0.5A VDS = -16V 8 C(pF) 6 Coss Crss 4 2 0 0 1 2 3 4 10 1 3 5 7 9 11 Fig 7. Gate Charge Characteristics 10 QG , Total Gate Charge(nC) -VDS, Drain-to-Source Voltage(V) Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response(R ja ) Duty factor = 0.5 0.2 0.1 0.1 0.05 PDM t T 100us 1 -I D(A) 1ms 0.1 0.02 0.01 10ms TA = 25C Single Pulse 0.01 0.1 1 10 Duty factor = t / T Peak Tj=PDM x R ja + Ta 100ms DC 100 Single pulse -VDS , Drain-to-Source Voltage(V) 0.01 0.0001 0.001 0.01 t, Pulse Width(s) 0.1 1 10 100 1000 Fig 9. Maximum Safe Operation Area VDS 90% Fig 10. Effective Transient Thermal Impedance VG QG -4.5V QGS 10% VGS td(on) tr td(off) tf QGD Charge Q Fig 11. Switching Time Circuit Fig.12 Gate Charge Waveform WEITRON http://www.weitron.com.tw 5/6 15-Jun-05 WTU1333 SOT-323 Outline Demensions Unit:mm A TOP VIEW B C D E G H K L J M Dim A B C D E G H J K L M SOT-323 Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 WEITRON http://www.weitron.com.tw 6/6 15-Jun-05 |
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