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| PROVISIONAL Wisdom Semiconductor WFW10N80 N-Channel MOSFET Features RDS(on) (Max 1.05 )@VGS=10V Gate Charge (Typical 55nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C) Symbol 2. Drain 1. Gate 3. Source General Description This Power MOSFET is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. TO-247 G DS Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25C) Continuous Drain Current(@TC = 100C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 C) Derating Factor above 25 C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 800 10 6.3 40 Units V A A A V mJ mJ V/ns W W/C C C 30 960 26 4.0 260 2.08 - 55 ~ 150 300 Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient Value Min. - Typ. 0.24 - Max. 0.48 40 Units C/W C/W C/W 1/2 Copyright@Wisdom Semiconductor Inc., All rights reserved. WFW10N80 Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS/ TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-source Leakage, Reverse VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 C VDS = 800V, VGS = 0V VDS = 640V, TC = 125 C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V 800 1.0 10 100 100 -100 V V/C uA uA nA nA ( TC = 25 C unless otherwise noted ) Parameter Test Conditions Min Typ Max Units IGSS On Characteristics VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance VDS = VGS, ID = 250uA VGS =10 V, ID = 5A 3.0 0.85 5.0 1.05 V Dynamic Characteristics Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V, VDS =25V, f = 1MHz 2100 220 25 pF Dynamic Characteristics Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDS =640V, VGS =10V, ID =10A (Note 4, 5) VDD =400V, ID =10A, RG =25 (Note 4, 5) 50 120 130 80 55 15 25 nC ns - Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L = 18.0mH, IAS =10A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 10A, di/dt 200A/us, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse Width 300us, Duty Cycle 2% 5. Essentially independent of operating temperature. Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions Integral Reverse p-n Junction Diode in the MOSFET IS =10A, VGS =0V IS=10A, VGS=0V, dIF/dt=100A/us Min. - Typ. 800 10 Max. 10 40 1.4 - Unit. A V ns uC 2/2 Copyright@Wisdom Semiconductor Inc., All rights reserved. |
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