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| VTP Process Photodiodes VTP7840 PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION Planar silicon photodiode in a transfer molded, large lensed sidelooker package. The dark package material filters out visible light but passes infrared. These diodes exhibit low dark current under reverse bias and fast speed of response. CASE 51 LENSED SIDELOOKER CHIP ACTIVE AREA: .0082 in2 (5.27 mm2) ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40C to 85C -40C to 85C ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTP curves, page 46) VTP7840 SYMBOL ISC TC ISC VOC TC VOC ID RSH CJ SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance Junction Capacitance Sensitivity Spectral Application Range Spectral Response - Peak Forward Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity @ 10 mA TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 10 V H = 0, V = 10 mV H = 0, V = 3 V @ Peak 725 925 1.0 48 5.3 x 10 -14 (Typ.) 5.1 x 10 12 (Typ.) .55 1150 0.25 40 50 Typ. 70 .20 325 -2.0 20 nA G pF A/W nm nm V Degrees W Hz cm Hz / W Max. A %/C mV UNITS PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 60 |
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