![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
PRELIMINARY DATA SHEET NPN SiGe RF TWIN TRANSISTOR PA880TS NPN SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) FEATURES * 2 different built-in transistors (NESG2046M33, NESG2107M33) Q1: High gain SiGe transistor fT = 18 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz Q2: Low phase distortion SiGe transistor suited for OSC applications fT = 10 GHz TYP., S21e2 = 9 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz * 6-pin super lead-less minimold (1007 package) BUILT-IN TRANSISTORS Q1 3-pin super lead-less minimold part No. NESG2046M33 Q2 NESG2107M33 ORDERING INFORMATION Part Number Quantity 50 pcs (Non reel) 10 kpcs/reel * 8 mm wide embossed taping * Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape Supplying Form PA880TS PA880TS-T3 Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10462EJ01V0DS (1st edition) Date Published January 2004 CP(K) Printed in Japan NEC Compound Semiconductor Devices 2004 PA880TS ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Q1 Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation VCBO VCEO VEBO IC Ptot Note Ratings Q2 13 5 1.5 100 110 Unit 13 5 1.5 40 110 V V V mA mW 130 in 2 elements Junction Temperature Storage Temperature Tj Tstg 150 -65 to +150 C C 2 Note Mounted on 1.08 cm x 1.0 mm (t) glass epoxy PCB 2 Preliminary Data Sheet PU10462EJ01V0DS PA880TS ELECTRICAL CHARACTERISTICS (TA = +25C) (1) Q1 Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Insertion Power Gain Noise Figure Symbol ICBO IEBO hFE Note 1 Test Conditions VCB = 5 V, IE = 0 mA VEB = 0.5 V, IC = 0 mA VCE = 1 V, IC = 2 mA VCE = 1 V, IC = 15 mA, f = 2 GHz MIN. - - 140 15 11 - TYP. - - 180 18 13 0.8 MAX. 100 100 220 - - 1.5 - Unit nA nA - GHz dB dB fT S21e NF 2 VCE = 1 V, IC = 15 mA, f = 2 GHz VCE = 1 V, IC = 3 mA, f = 2 GHz, ZS = Zopt Associated Gain Ga VCE = 1 V, IC = 3 mA, f = 2 GHz, ZS = Zopt 9.5 - 11.5 dB Reverse Transfer Capacitance Cre Note 2 VCB = 1 V, IE = 0 mA, f = 1 MHz 0.2 0.4 pF (2) Q2 Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product (1) Gain Bandwidth Product (2) Insertion Power Gain (1) Insertion Power Gain (2) Noise Figure Symbol ICBO IEBO hFE Note 1 Test Conditions VCB = 5 V, IE = 0 mA VEB = 0.5 V, IC = 0 mA VCE = 1 V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 1 V, IC = 20 mA, f = 2 GHz MIN. - - 140 7 - 7.5 - - TYP. - - 180 10 17 9 10 0.9 MAX. 100 100 220 - - - - 1.5 - Unit nA nA - GHz GHz dB dB dB fT fT S21e S21e NF 2 VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 1 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt 2 Associated Gain Ga VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt 7 - 10 dB Reverse Transfer Capacitance Cre Note 2 VCB = 1 V, IE = 0 mA, f = 1 MHz 0.5 0.7 pF Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION Rank Marking hFE Value of Q1 hFE Value of Q2 FB xK 140 to 220 140 to 220 Preliminary Data Sheet PU10462EJ01V0DS 3 PA880TS PACKAGE DIMENSIONS 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) (UNIT: mm) 0.90.05 0.70.05 (Top View) 6 1 C1 0.1250.05 0.35 1 Q1 6 B1 xK 1.00.05 0.7 2 5 E1 0.35 2 5 E2 3 4 C2 3 Q2 4 B2 0.4 MAX. 0.11+0.1 -0.05 PIN CONNECTIONS 1. 2. 3. 4. 5. 6. Collector (Q1) Emitter (Q1) Collector (Q2) Base (Q2) Emitter (Q2) Base (Q1) 4 Preliminary Data Sheet PU10462EJ01V0DS PA880TS * The information in this document is current as of January, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 Preliminary Data Sheet PU10462EJ01V0DS 5 PA880TS For further information, please contact NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) 5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) FAX: +852-3107-7309 TEL: +852-3107-7303 Hong Kong Head Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Taipei Branch Office FAX: +82-2-558-5209 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0310 |
Price & Availability of UPA880TS-T3
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |