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PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES * * * SMALL PACKAGE OUTLINE: SOT-363 package measures just 2.0 mm x 1.25 mm LOW HEIGHT PROFILE: Just 0.60 mm high TWO DIFFERENT DIE TYPES: Q1 - Ideal oscillator transistor Q2 - Ideal buffer amplifier transistor 0.65 2.0 0.2 1.3 2 Q2 UPA838TF OUTLINE DIMENSIONS (Units in mm) Package Outline TS06 2.1 0.1 1.25 0.1 Q1 1 6 0.22 - 0.05 (All Leads) +0.10 5 DESCRIPTION The UPA838TF contains one NE688 and one NE687 NPN high frequency silicon bipolar chip. NEC's new low profile TF package is ideal for all portable wireless applications where reducing component height is a prime consideration. Each transistor chip is independently mounted and easily configured for oscillator/buffer amplifier and other applications. 3 4 0.6 0.1 0.45 0 ~ 0.1 0.13 0.05 PIN CONNECTIONS 1. Collector (Q1) 4. Base (Q2) 2. Emitter (Q1) 5. Emitter (Q2) 3. Collector (Q2) 6. Base (Q1) ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE fT fT Cre |S21E|2 |S21E|2 NF NF ICBO IEBO hFE fT fT Cre |S21E|2 |S21E|2 NF NF PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain1 at VCE = 1 V, IC = 3 mA Gain Bandwidth (1) at VCE = 1 V, IC = 3 mA, f = 2 GHz Gain Bandwidth (2) at VCE = 3 V, IC = 20 mA, f = 2 GHz Feedback Capacitance2 at VCB = 1 V, IE = 0, f = 1 MHz Insertion Power Gain (1) at VCE = 1 V, IC =3 mA, f = 2 GHz Insertion Power Gain (2) at VCE = 3 V, IC =20 mA, f = 2 GHz Noise Figure (1) at VCE = 1 V, IC = 3 mA, f = 2 GHz Noise Figure (2) at VCE = 3 V, IC = 7 mA, f = 2 GHz Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain1 at VCE = 2 V, IC = 20 mA GHz GHz pF dB dB dB dB 7 6 1.3 1.3 Gain Bandwidth (1) at VCE = 2 V, IC = 20 mA, f = 2 GHz Gain Bandwidth (2) at VCE = 1 V, IC = 10 mA, f = 2 GHz Feedback Capacitance2 at VCB = 2 V, IE = 0, f = 1 MHz Insertion Power Gain (1) at VCE = 2 V, IC =20 mA, f = 2 GHz Insertion Power Gain (2) at VCE = 1 V, IC =10 mA, f = 2 GHz Noise Figure (1) at VCE = 2 V, IC = 3 mA, f = 2 GHz Noise Figure (2) at VCE = 1 V, IC = 3 mA, f = 2 GHz GHz GHz pF dB dB dB dB A A 70 9 7 11 9 0.4 8.5 7.5 2 2 2.5 UNITS A A 100 4.0 4.5 9.0 0.75 3.5 6.5 1.7 1.5 MIN Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right. UPA838TF TS06 TYP MAX 0.1 0.1 145 Q1 0.85 2.5 0.1 0.1 140 Q2 0.8 Notes: 1. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter. California Eastern Laboratories UPA838TF ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS Q1 9 6 2 100 Q2 5 3 2 30 ORDERING INFORMATION PART NUMBER UPA838TF-T1 QUANTITY 3000 PACKAGING Tape & Reel 110 110 200 150 150 -65 to +150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM 2/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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