 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| TSUS520. Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS520. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue-grey tinted plastic package. The devices are spectrally matched to silicon photodiodes and phototransistors. 94 8389 Features * * * * * * * * * * * Low cost emitter Low forward voltage High radiant power and radiant intensity e2 Suitable for DC and high pulse current operation Standard T-13/4 ( 5 mm) package Angle of half intensity = 15 Peak wavelength p = 950 nm High reliability Good spectral matching to Si photodetectors Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications * Infrared remote control and free air transmission systems with low forward voltage and low cost requirements in combination with PIN photodiodes or phototransistors. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient t 5 sec, 2 mm from case tp/T = 0.5, tp = 100 s tp = 100 s Test condition Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 150 300 2.5 210 100 - 55 to + 100 - 55 to + 100 260 375 Unit V mA mA A mW C C C C K/W Document Number 81055 Rev. 2.0, 23-Feb-07 www.vishay.com 1 TSUS520. Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward voltage Temp. coefficient of VF Reverse current Junction capacitance Test condition IF = 100 mA, tp = 20 ms IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 Symbol VF TKVF IR Cj 30 Min Typ. 1.3 - 1.3 100 Max 1.7 Unit V mV/K A pF Optical Characteristics Tamb = 25 C, unless otherwise specified Parameter Temp. coefficient of e Angle of half intensity Peak wavelength Spectral bandwidth Temp. coefficient of p Rise time Fall time Virtual source diameter IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A Test condition IF = 20 mA Symbol TKe p TKp tr tr tf tf Min Typ. - 0.8 15 950 50 0.2 800 400 800 400 3.8 Max Unit %/K deg nm nm nm/K ns ns ns ns mm Type Dedicated Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward voltage Test condition IF = 1.5 A, tp = 100 s Part TSUS5200 TSUS5201 TSUS5202 Radiant intensity IF = 100 mA, tp = 20 ms TSUS5200 TSUS5201 TSUS5202 IF = 1.5 A, tp = 100 s TSUS5200 TSUS5201 TSUS5202 Radiant power IF = 100 mA, tp = 20 ms TSUS5200 TSUS5201 TSUS5202 Symbol VF VF VF Ie Ie Ie Ie Ie Ie e e e 10 15 20 95 120 170 Min Typ. 2.2 2.2 2.2 20 25 30 180 230 280 13 14 15 Max 3.4 3.4 2.7 50 50 50 Unit V V V mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW mW mW www.vishay.com 2 Document Number 81055 Rev. 2.0, 23-Feb-07 TSUS520. Vishay Semiconductors Typical Characteristics Tamb = 25 C, unless otherwise specified 250 10 4 10 3 10 2 10 1 10 0 10 -1 94 7996 PV - Power Dissipation (mW) 150 R thJA 100 50 0 0 20 40 60 80 100 I F - Forward Current (mA) 200 0 1 2 3 4 94 7957 Tamb - Ambient Temperature (C) V F - Forward Voltage (V) Figure 1. Power Dissipation vs. Ambient Temperature Figure 4. Forward Current vs. Forward Voltage 200 V Frel - Relative Forward Voltage (V) 250 1.2 1.1 IF = 10 mA 1.0 0.9 IF - Forward Current (mA) 150 100 RthJA 50 0 0 20 40 60 80 100 0.8 0.7 0 20 40 60 80 100 94 7988 Tamb - Ambient Temperature (C) 94 7990 T amb - Ambient Temperature (C) Figure 2. Forward Current vs. Ambient Temperature Figure 5. Relative Forward Voltage vs. Ambient Temperature 10 1 I e - Radiant Intensity (mW/sr) 1000 I F - Forward Current (A) I FSM = 2.5 A ( Single Pulse ) tp/T = 0.01 10 0 0.05 0.1 0.5 1.0 10 -1 10 -2 100 TSUS 5202 TSUS5200 10 1 TSUS 5201 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 94 7989 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 94 7991 Figure 3. Pulse Forward Current vs. Pulse Duration Figure 6. Radiant Intensity vs. Forward Current Document Number 81055 Rev. 2.0, 23-Feb-07 www.vishay.com 3 TSUS520. Vishay Semiconductors 0 10 20 30 - Radiant Power (mW) e TSUS 5202 100 TSUS5200 10 I e rel - Relative Radiant Intensity 1000 40 1.0 0.9 0.8 0.7 50 60 70 80 1 0.1 10 0 94 7992 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 94 7995 0.6 0.4 0.2 0 0.2 0.4 0.6 Figure 7. Radiant Power vs. Forward Current Figure 10. Relative Radiant Intensity vs. Angular Displacement 1.6 1.2 I e rel ; e rel IF = 20 mA 0.8 0.4 0 - 10 0 10 94 7993 50 100 140 T amb - Ambient Temperature (C) Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature 1.25 e rel - Relative Radiant Power 1.0 0.75 0.5 0.25 IF = 100 mA 0 900 950 1000 94 7994 - Wavelength (nm) Figure 9. Relative Radiant Power vs. Wavelength www.vishay.com 4 Document Number 81055 Rev. 2.0, 23-Feb-07 TSUS520. Vishay Semiconductors Package Dimensions in mm 95 10916 Document Number 81055 Rev. 2.0, 23-Feb-07 www.vishay.com 5 TSUS520. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 Document Number 81055 Rev. 2.0, 23-Feb-07 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
Price & Availability of TSUS52007
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |